AOT8N60 / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description Features The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Top View TO-220 VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.9 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! D TO-220F G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 V Drain-Source Voltage 600 DS VGS Gate-Source Voltage ±30 Continuous Drain B Current TC=25°C Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy C G Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A A ID IDM 5* 5 A 32 IAR 3.2 A EAR 150 mJ EAS dv/dt 300 5 mJ V/ns W PD 147 50 1.17 0.4 TJ, TSTG Symbol RθJA RθCS o -50 to 150 W/ C °C 300 °C TL Maximum Case-to-Sink D,F RθJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature. Alpha & Omega Semiconductor, Ltd. V 8* 8 TC=100°C Units V AOT8N60 65 AOTF8N60 65 Units 0.5 - 0.85 2.5 °C/W °C/W °C/W www.aosmd.com AOT8N60/AOTF8N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature /∆TJ Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=VGS, ID=250µA Forward Transconductance ±100 nA 5 V VGS=10V, ID=4A 0.74 0.9 VDS=40V, ID=4A 12.5 Ω S 1 V IS ISM Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr µA 3.8 Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Output Capacitance o V/ C 0.65 1 Gate Threshold Voltage Static Drain-Source On-Resistance Coss V VDS=600V, VGS=0V VGS(th) VSD 700 ID=250µA, VGS=0V, TJ=150°C IGSS RDS(ON) gFS V VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=480V, ID=8A VGS=10V, VDS=300V, ID=8A, RG=25Ω IF=8A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 3 0.73 8 A 32 A 912 1140 1370 pF 87 109 131 pF 6.2 7.8 9.5 pF 3.1 3.9 5.9 Ω 28.4 35 nC 5.8 7 nC 13.4 17 nC 30 40 ns 63 75 ns 69 85 ns 51 65 ns 270 324 3.3 4.0 ns µC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. L=60mH, IAS=3.2A, VDD=50V, RG=25Ω, Starting TJ=25°C Rev 0. July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 100 10V 15 10 125°C ID(A) 6V ID (A) -55°C VDS=40V 6.5V 10 1 5 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 1.6 3 1.4 VGS=10V Normalized On-Resistance RDS(ON) (mΩ) 4 1.2 1.0 0.8 0.6 2.5 VGS=10V ID=4A 2 1.5 1 0.5 0.4 0 2 4 6 8 10 12 14 0 -100 16 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 1.1 IS (A) BVDSS (Normalized) 125°C 1.0E+00 1 25°C 1.0E-01 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=480V ID=8A Ciss Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss 100 10 3 Crss 0 1 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 100 10µs 0.1 100µs 0.1 10ms 0.1s DC TJ(Max)=150°C TC=25°C ID (Amps) 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10µs RDS(ON) limited 10 1ms 1 100 RDS(ON) limited 10 ID (Amps) 40 100µs 1ms 10ms 1 DC 0.1 0.1s 1s 10s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT8N60 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF8N60 (Note F) 10 Current rating ID(A) 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=0.45°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=2.5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N60 (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT1N60/AOTF1N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com