BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 For general AF applications High collector current High current gain Low collector-emitter saturation voltage A L 3 3 C B Top View 1 1 2 K E 2 PACKAGE INFORMATION D Weight: 0.0074 g (approximately) F H G J Collector MARKING A B C D E F BC817-16W: BC817-25W: BC817-40W: 6A 6B 6C , YM Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. Base REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Emitter ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V IC 500 mA PC 300 mW TJ, TSTG -55 ~ +150 ℃ Collector Current Collector Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Parameter Symbol Min. Max. Unit Test Conditions Collector-base Breakdown Voltage BVCBO 50 - V IC = 10 uA, IE = 0 Collector-emitter Breakdown Voltage BVCEO 45 - V IC = 10 mA, IB = 0 Emitter-base Breakdown Voltage BVEBO 5 - V IE = 1 uA, IC = 0 Collector Cut-off Current ICBO - 0.1 uA VCB = 20V, IE = 0 Emitter Cut-off Current IEBO - 0.1 uA VEB = 5V, IC = 0 Collector-emitter Saturation Voltage VCE(sat) - 0.7 V IC = 500mA, IB = 50 mA Base-emitter Saturation Voltage VBE(sat) - 1.2 V IC = 500mA, IB = 50 mA Base-emitter Voltage VBE(on) 1.2 V VCE = 1V, IC = 500mA DC Current Gain hFE(1) 100 600 VCE = 1 V, IC = 100 mA DC Current Gain hFE(2) 40 - VCE = 1 V, IC = 500 mA Transition Frequency fT 100 - MHz Collector Capacitance CC - 5 pF VCE = 5 V, IC = 10 mA, f = 100MHz VCB = 10V, f=1MHz CLASSIFICATION OF hFE(1) Rank Range 28-Jul-2010 Rev. C BC817-16W BC817-25W BC817-40W 100 - 250 160 - 400 250 - 600 Page 1 of 2 BC817 -16W, -25W, -40W Elektronische Bauelemente 500 mA, 50 V NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES 28-Jul-2010 Rev. C Page 2 of 2