CJL3443 SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET SOT-23-6L FEATURE z Fast Switching Speed z Low Gate Charge z High Performance Trench Technology for extremely Low RDS(on) 1. GATE 2. DRAIN D D 3. SOURCE S D Description This P-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation In a very small footprint for applications where the larger packages are impractical. 1 6 2 5 3 4 D G MARKING: R43 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Continuous Gate-Source Voltage VGS ±8 ID -4 A Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature [email protected] V PD 0.35 W RθJA 357 ℃/W Tj 150 Tstg -55 ~+150 www.zpsemi.com ℃ 1 of 3 CJL3443 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 V Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-16V, VGS =0V -1.0 µA -1.50 V On characteristics Gate-threshold voltage VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gfs VDS =VGS, ID =-0.25mA -0.40 VGS =-4.5V, ID =-4A 0.065 VGS =-2.5V, ID =-3.2A 0.10 VDS =-5V, ID =-4A 8 Ω S Dynamic characteristics (note 2) Input capacitance Ciss 640 Output capacitance Coss Reverse transfer capacitance Crss 90 td(on) 20 VDS =-10,VGS =0V, f=1MHz pF 180 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) tr td(off) VGS=-4.5V, VDD=-10V, 30 ID =-1A,RGEN=6Ω 42 tf ns 55 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=-1.3A, VGS = 0V -1.2 V Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 3 CJL3443 Output Characteristics -20 Transfer Characteristics -5 VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=-2.0V -4 ID ID (A) (A) -16 DRAIN CURRENT DRAIN CURRENT -12 -8 VGS=-1.5V -4 -0 -3 -2 -1 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 100 VDS -0 -0.0 -4 -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) —— 500 VGS -2.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed 400 (mΩ) 80 RDS(ON) VGS=-2.5V 60 VGS=-4.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) Pulsed 40 20 0 200 ID=-4.0A 100 -0 -4 -8 -12 DRAIN CURRENT ID -16 -20 0 -0 (A) -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) IS —— VSD -20 -10 300 Ta=25℃ Pulsed SOURCE CURRENT IS (A) -3 -1 -0.3 -0.1 -0.03 -0.01 -3E-3 -1E-3 -0.0 -0.4 -0.8 SOURCE TO DRAIN VOLTAGE [email protected] -1.2 -1.6 VSD (V) www.zpsemi.com 3 of 3