PHILIPS BZB84-C39 General-purpose zener diodes in a sot23 (to-236ab) small surface-mounted device (smd) plastic package Datasheet

BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
n Non-repetitive peak reverse power
dissipation: ≤ 40 W
n Total power dissipation: ≤ 300 mW
n Two tolerance series:
B = ±2 % and C = ±5 %
n Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
n Small plastic package suitable for
surface-mounted design
n Dual common anode configuration
n AEC-Q101 qualified
1.3 Applications
n General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
forward voltage
IF = 10 mA
Min
Typ
Max
Unit
[1]
-
-
0.9
V
[2]
-
-
40
W
Per diode
VF
PZSM
non-repetitive peak reverse
power dissipation
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84 series
NXP Semiconductors
Dual Zener diodes
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Type number
BZB84-B2V4 to
BZB84-C75[1]
[1]
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
Type number
Marking code[1]
BZB84-B2V4
V9*
BZB84-C2V4
U9*
BZB84-B2V7
VA*
BZB84-C2V7
UA*
BZB84-B3V0
VB*
BZB84-C3V0
UB*
BZB84-B3V3
VC*
BZB84-C3V3
UC*
BZB84-B3V6
VD*
BZB84-C3V6
UD*
BZB84-B3V9
VE*
BZB84-C3V9
UE*
BZB84-B4V3
VF*
BZB84-C4V3
UF*
BZB84-B4V7
VG*
BZB84-C4V7
UG*
BZB84-B5V1
VH*
BZB84-C5V1
UH*
BZB84-B5V6
VK*
BZB84-C5V6
UK*
BZB84-B6V2
VL*
BZB84-C6V2
UL*
BZB84-B6V8
VM*
BZB84-C6V8
UM*
BZB84-B7V5
VN*
BZB84-C7V5
UN*
BZB84-B8V2
VP*
BZB84-C8V2
UP*
BZB84-B9V1
VR*
BZB84-C9V1
UR*
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
2 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 4.
Marking codes …continued
Type number
Marking code[1]
Type number
Marking code[1]
BZB84-B10
VS*
BZB84-C10
US*
BZB84-B11
VT*
BZB84-C11
UT*
BZB84-B12
VU*
BZB84-C12
UU*
BZB84-B13
VV*
BZB84-C13
UV*
BZB84-B15
VW*
BZB84-C15
UW*
BZB84-B16
PT*
BZB84-C16
PB*
BZB84-B18
PU*
BZB84-C18
PC*
BZB84-B20
RP*
BZB84-C20
RQ*
BZB84-B22
PV*
BZB84-C22
PD*
BZB84-B24
PW*
BZB84-C24
PE*
BZB84-B27
PX*
BZB84-C27
PF*
BZB84-B30
PY*
BZB84-C30
PG*
BZB84-B33
PZ*
BZB84-C33
PH*
BZB84-B36
RA*
BZB84-C36
PJ*
BZB84-B39
RB*
BZB84-C39
PK*
BZB84-B43
RC*
BZB84-C43
PL*
BZB84-B47
RD*
BZB84-C47
PM*
BZB84-B51
RE*
BZB84-C51
PN*
BZB84-B56
RF*
BZB84-C56
PP*
BZB84-B62
RG*
BZB84-C62
PQ*
BZB84-B68
RH*
BZB84-C68
PR*
BZB84-B75
RJ*
BZB84-C75
PS*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
mA
Per diode
IF
forward current
IZSM
non-repetitive peak
reverse current
[1]
PZSM
non-repetitive peak
reverse power dissipation
[1]
BZB84_SER_3
Product data sheet
-
200
-
see
Table 8, 9,
10 and 11
-
40
W
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
3 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Ptot
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
-
300
mW
Per device
[2]
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
417
K/W
[2]
-
-
100
K/W
Per device; single diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Soldering points at pins 1 and 2.
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
forward voltage
IF = 10 mA
Min
Typ
Max
Unit
-
-
0.9
V
Per diode
VF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BZB84_SER_3
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
4 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 8.
Characteristics per type; BZB84-B2V4 to BZB84-B24
Tj = 25 °C unless otherwise specified.
BZB84Bxxx
Working voltage
VZ (V)
Differential
resistance
Reverse current Temperature
coefficient
I (µA)
R
rdif (Ω)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Min
Max
Max
Max
Max
VR (V)
Min
Max
Max
Max
2V4
2.35
2.45
600
100
50
1
−3.5
0
450
6.0
2V7
2.65
2.75
600
100
20
1
−3.5
0
450
6.0
3V0
2.94
3.06
600
95
10
1
−3.5
0
450
6.0
3V3
3.23
3.37
600
95
5
1
−3.5
0
450
6.0
3V6
3.53
3.67
600
90
5
1
−3.5
0
450
6.0
3V9
3.82
3.98
600
90
3
1
−3.5
0
450
6.0
4V3
4.21
4.39
600
90
3
1
−3.5
0
450
6.0
4V7
4.61
4.79
500
80
3
2
−3.5
0.2
300
6.0
5V1
5.00
5.20
480
60
2
2
−2.7
1.2
300
6.0
5V6
5.49
5.71
400
40
1
2
−2.0
2.5
300
6.0
6V2
6.08
6.32
150
10
3
4
0.4
3.7
200
6.0
6V8
6.66
6.94
80
15
2
4
1.2
4.5
200
6.0
7V5
7.35
7.65
80
15
1
5
2.5
5.3
150
4.0
8V2
8.04
8.36
80
15
0.70
5
3.2
6.2
150
4.0
9V1
8.92
9.28
100
15
0.50
6
3.8
7.0
150
3.0
10
9.80
10.20
150
20
0.20
7
4.5
8.0
90
3.0
11
10.80
11.20
150
20
0.10
8
5.4
9.0
85
2.5
12
11.80
12.20
150
25
0.10
8
6.0
10.0
85
2.5
13
12.70
13.30
170
30
0.10
8
7.0
11.0
80
2.5
15
14.70
15.30
200
30
0.05
10.5
9.2
13.0
75
2.0
16
15.70
16.30
200
40
0.05
11.2
10.4
14.0
75
1.5
18
17.60
18.40
225
45
0.05
12.6
12.4
16.0
70
1.5
20
19.6
20.4
225
55
0.05
14.0
14.4
18.0
60
1.5
22
21.6
22.4
250
55
0.05
15.4
16.4
20.0
60
1.25
24
23.5
24.5
250
70
0.05
16.8
18.4
22.0
55
1.25
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
5 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 9.
Characteristics per type; BZB84-B27 to BZB84-B75
Tj = 25 °C unless otherwise specified.
BZB84Bxxx
Working voltage
VZ (V)
Differential
resistance
Reverse current Temperature
coefficient
I (µA)
R
rdif (Ω)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
IZ = 2 mA
IZ = 0.5 mA IZ = 2 mA
IZ = 2 mA
Min
Max
Max
Max
Max
VR (V)
Min
Max
Max
Max
27
26.5
27.5
300
80
0.05
18.9
21.4
25.3
50
1.00
30
29.4
30.6
300
80
0.05
21.0
24.4
29.4
50
1.00
33
32.3
33.7
325
80
0.05
23.1
27.4
33.4
45
0.90
36
35.3
36.7
350
90
0.05
25.2
30.4
37.4
45
0.80
39
38.2
39.8
350
130
0.05
27.3
33.4
41.2
45
0.70
43
42.1
43.9
375
150
0.05
30.1
37.6
46.6
40
0.60
47
46.1
47.9
375
170
0.05
32.9
42.0
51.8
40
0.50
51
50.0
52.0
400
180
0.05
35.7
46.6
57.2
40
0.40
56
54.9
57.1
425
200
0.05
39.2
52.2
63.8
40
0.30
62
60.8
63.2
450
215
0.05
43.4
58.8
71.6
35
0.30
68
66.6
69.4
475
240
0.05
47.6
65.6
79.8
35
0.25
75
73.5
76.5
500
255
0.05
52.5
73.4
88.6
35
0.20
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
6 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 10. Characteristics per type; BZB84-C2V4 to BZB84-C24
Tj = 25 °C unless otherwise specified.
BZB84Cxxx
Working voltage
VZ (V)
Differential
resistance
Reverse current Temperature
coefficient
I (µA)
R
rdif (Ω)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
IZ = 5 mA
Min
Max
Max
Max
Max
VR (V)
Min
Max
Max
Max
2V4
2.2
2.6
600
100
50
1
−3.5
0
450
6.0
2V7
2.5
2.9
600
100
20
1
−3.5
0
450
6.0
3V0
2.8
3.2
600
95
10
1
−3.5
0
450
6.0
3V3
3.1
3.5
600
95
5
1
−3.5
0
450
6.0
3V6
3.4
3.8
600
90
5
1
−3.5
0
450
6.0
3V9
3.7
4.1
600
90
3
1
−3.5
0
450
6.0
4V3
4.0
4.6
600
90
3
1
−3.5
0
450
6.0
4V7
4.4
5.0
500
80
3
2
−3.5
0.2
300
6.0
5V1
4.8
5.4
480
60
2
2
−2.7
1.2
300
6.0
5V6
5.2
6.0
400
40
1
2
−2.0
2.5
300
6.0
6V2
5.8
6.6
150
10
3
4
0.4
3.7
200
6.0
6V8
6.4
7.2
80
15
2
4
1.2
4.5
200
6.0
7V5
7.0
7.9
80
15
1
5
2.5
5.3
150
4.0
8V2
7.7
8.7
80
15
0.70
5
3.2
6.2
150
4.0
9V1
8.5
9.6
100
15
0.50
6
3.8
7.0
150
3.0
10
9.4
10.6
150
20
0.20
7
4.5
8.0
90
3.0
11
10.4
11.6
150
20
0.10
8
5.4
9.0
85
2.5
12
11.4
12.7
150
25
0.10
8
6.0
10.0
85
2.5
13
12.4
14.1
170
30
0.10
8
7.0
11.0
80
2.5
15
13.8
15.6
200
30
0.05
10.5
9.2
13.0
75
2.0
16
15.3
17.1
200
40
0.05
11.2
10.4
14.0
75
1.5
18
16.8
19.1
225
45
0.05
12.6
12.4
16.0
70
1.5
20
18.8
21.2
225
55
0.05
14.0
14.4
18.0
60
1.5
22
20.8
23.3
250
55
0.05
15.4
16.4
20.0
60
1.25
24
22.8
25.6
250
70
0.05
16.8
18.4
22.0
55
1.25
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
7 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
Table 11. Characteristics per type; BZB84-C27 to BZB84-C75
Tj = 25 °C unless otherwise specified.
BZB84Cxxx
Working voltage
VZ (V)
Differential
resistance
Reverse current Temperature
coefficient
I (µA)
R
rdif (Ω)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
IZ = 2 mA
IZ = 0.5 mA IZ = 2 mA
IZ = 2 mA
Min
Max
Max
Max
Max
VR (V)
Min
Max
Max
Max
27
25.1
28.9
300
80
0.05
18.9
21.4
25.3
50
1.00
30
28.0
32.0
300
80
0.05
21.0
24.4
29.4
50
1.00
33
31.0
35.0
325
80
0.05
23.1
27.4
33.4
45
0.90
36
34.0
38.0
350
90
0.05
25.2
30.4
37.4
45
0.80
39
37.0
41.0
350
130
0.05
27.3
33.4
41.2
45
0.70
43
40.0
46.0
375
150
0.05
30.1
37.6
46.6
40
0.60
47
44.0
50.0
375
170
0.05
32.9
42.0
51.8
40
0.50
51
48.0
54.0
400
180
0.05
35.7
46.6
57.2
40
0.40
56
52.0
60.0
425
200
0.05
39.2
52.2
63.8
40
0.30
62
58.0
66.0
450
215
0.05
43.4
58.8
71.6
35
0.30
68
64.0
72.0
475
240
0.05
47.6
65.6
79.8
35
0.25
75
70.0
79.0
500
255
0.05
52.5
73.4
88.6
35
0.20
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
mbg801
103
mbg781
300
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
tp (ms)
0
0.6
10
0.8
1
VF (V)
(1) Tj = 25 °C (prior to surge)
Tj = 25 °C
(2) Tj = 150 °C (prior to surge)
Fig 1.
Per diode: Non-repetitive peak reverse power
dissipation as a function of pulse duration;
maximum values
Fig 2.
Per diode: Forward current as a function of
forward voltage; typical values
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
8 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
mbg783
0
mbg782
10
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
Fig 3.
−5
0
20
40
IZ (mA)
60
0
4
8
12
16
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
BZB84-B/C2V4 to BZB84-B/C4V3
BZB84-B/C4V7 to BZB84-B/C12
Per diode: Temperature coefficient as a
function of working current; typical values
Fig 4.
006aaa996
50
IZ
(mA)
3.9
40
006aaa997
VZ(nom) (V) = 10
IZ
(mA)
25
3.3
4.7
5.6
6.8
12
20
8.2
20
Per diode: Temperature coefficient as a
function of working current; typical values
30
VZ(nom) (V) = 2.7
IZ (mA)
30
15
15
20
10
18
10
22
0
33 36
0
0
2
4
6
8
10
0
10
20
Tj = 25 °C
Tj = 25 °C
BZB84-B/C2V7 to BZB84-B/C8V2
BZB84-B/C10 to BZB84-B/C36
Per diode: Working current as a function of
working voltage; typical values
Fig 6.
40
Per diode: Working current as a function of
working voltage; typical values
BZB84_SER_3
Product data sheet
30
VZ (V)
VZ (V)
Fig 5.
27
5
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
9 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
Fig 7.
0.15
0.09
04-11-04
Package outline SOT23 (TO-236AB)
10. Packing information
Table 12. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BZB84-B2V4 to
BZB84-C75[2]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
[1]
For further information and the availability of packing methods, see Section 14.
[2]
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
BZB84_SER_3
Product data sheet
Packing quantity
3000
10000
-215
-235
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
10 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
Fig 8.
sot023_fr
Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
Fig 9.
Wave soldering footprint SOT23 (TO-236AB)
BZB84_SER_3
Product data sheet
sot023_fw
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
11 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
12. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BZB84_SER_3
20090609
Product data sheet
-
BZB84_SER_2
Modifications:
•
•
•
Table 5 “Limiting values”: Ptot maximum value amended
Table 6: Rth maximum values amended
Section 13 “Legal information”: updated
BZB84_SER_2
20090223
Product data sheet
-
BZB84_SER_1
BZB84_SER_1
20080514
Product data sheet
-
-
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
12 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BZB84_SER_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 9 June 2009
13 of 14
BZB84 series
NXP Semiconductors
Dual Zener diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 June 2009
Document identifier: BZB84_SER_3