CM600DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ F-Series Module 600 Amperes/1200 Volts A TC MEASURED POINT B F G CL T - (4 TYP.) M P C1 C E E2 C2E1 E2 Z X CL Q E1 G1 AA LABEL R G2 N Y P W(4 PLACES) Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. S - (3 PLACES) L K J H V D U G2 E2 RTC Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C2E1 C1 E2 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 5.51 B 5.12 Millimeters 140.0 P 0.57 14.5 130.0 Q 1.57 40.0 130.0 65.0 C 5.12 R 2.56 D 1.38 +0/-0.02 35.0 +0/-0.5 S M8 M8 E 4.33±0.01 110.0±0.25 T 0.26 Dia. 6.5 Dia. F 4.33±0.01 110.0±0.25 U 0.32 8.0 G 0.39 10.0 V H 0.45 11.5 W M4 0.97 +0.04/-0.02 24.5 +1.0/-0.5 M4 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600DU-24F is a 1200V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. J 0.54 13.8 X 0.59 15.0 K 1.72 43.8 Y 0.35 9.0 L 1.42 36.0 Z 1.02 26.0 Type Current Rating Amperes VCES Volts (x 50) M 0.39 10.0 AA 0.79 20.0 CM 600 24 N 0.80 20.4 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMOD™ F-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600DU-24F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1540 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb – 1200 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 2 80 IGES VGE = VGES, VCE = 0V – – Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.0 6 7.0 Collector-Emitter Saturation Voltage VCE(sat) mA µA Volts IC = 600A, VGE = 15V, Tj = 25°C – 1.95 2.55 Volts IC = 600A, VGE = 15V, Tj = 125°C – 2.05 – Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V – 6600 Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units – 3.35 nC Volts Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMOD™ F-Series Module 600 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Min. Typ. – – 230 Max. Units nf – – 10 nf – – 6 nf – – 450 ns Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 600A, Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time td(off) RG = 1.0⍀, – – 800 ns Times Fall Time tf Inductive Load – – 300 ns Diode Reverse Recovery Time* trr Switching Operation – – 500 ns Diode Reverse Recovery Charge* Qrr IE = 600A – 43.2 – µC Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Units Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – – 0.081 °C/W – – 0.11 °C/W – – 0.032** °C/W – 0.010 1.0 – Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)R Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance Rth(j-c')Q Per IGBT 1/2 Module Tc Reference Point Under Chips Contact Thermal Resistance External Gate Resistance Rth(c-f) Per Module, Thermal Grease Applied RG – °C/W 52 Ω *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **If you use this value, Rth(f-a) should be measured just under the chips. 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMOD™ F-Series Module 600 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 9.5 9 800 8.5 400 8 5 VGE = 15V Tj = 25°C Tj = 125°C 2.5 2.0 1.5 1.0 0.5 0 0 0 1 2 3 Tj = 25°C 4 3 IC = 1200A 2 IC = 240A IC = 600A 1 0 0 4 300 600 900 1200 0 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 Cies 103 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 102 101 td(off) tf td(on) 102 tr VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 25°C Inductive Load 101 Coes 0 1.0 1.5 2.0 2.5 3.0 3.5 100 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE trr Irr 102 101 101 102 102 EMITTER CURRENT, IE, (AMPERES) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 VCC = 600V VGE = ±15V RG = 1.0 Ω Tj = 25°C Inductive Load IC = 600A 16 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) 0.5 VCC = 400V VCC = 600V 12 8 4 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 100 10-1 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-3 101 100 10-2 10-1 100 2000 4000 6000 8000 GATE CHARGE, QG, (nC) 10000 101 Per Unit Base Rth(j-c) = 0.081°C/W (IGBT) Rth(j-c) = 0.11 °C/W (FWDi) Single Pulse TC = 25°C 10-1 10-1 10-2 10-2 10-3 0 0 20 104 VGE = 0V Cres 4 18 COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25°C 103 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 3.0 15 11 10 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10-5 TIME, (s) 10-4 10-3 10-3