ASX501 250 ~ 2500 MHz MMIC Amplifier Features Description 18dB Gain at 900 MHz The ASX501, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 2.5 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. 31.5 dBm P1dB at 900 MHz 47 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply ASX501 Package Style: SOT89 Typical Performance (Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 2000 Typical 900 2000 Gain dB 18.0 11.5 18.0 11.5 S11 dB -16 -15 -16 -15 S22 dB -17 -13 -17 -13 Output IP3 dBm 471) 472) 441) 442) Noise Figure dB 4.7 5.0 4.7 5.0 Output P1dB dBm 31.5 31.0 31.5 31 Current mA 560 560 457 457 WCDMA Device Voltage V +5 +5 +4.7 +4.7 RFID Application Circuit IF (450 ~ 470 MHz) LTE CDMA GSM PCS (908 ~ 923 MHz, balanced) 1) OIP3 measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. 2) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Product Specifications Parameters Units Testing Frequency MHz Min Typ Gain dB S11 dB S22 dB Output IP3 dBm Noise Figure dB Output P1dB dBm 29.5 31.5 Current mA 520 560 Device Voltage V Max 900 18.0 18.0 -16 -17 46 47 4.7 4.8 600 +5 Pin Configuration Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature +150 C Input RF Power (CW, 50 matched)1) +25 dBm Thermal Resistance 23 C/W Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias 1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/15 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASX501 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 Mounting Recommendation (In mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 500 V ~ 1000 V MM Class A Voltage Level: < 200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/15 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier Frequency (MHz) 450 ~ 470 Magnitude S21 (dB) 20.0 Magnitude S11 (dB) -11 Magnitude S22 (dB) -12 IF Output P1dB (dBm) 31.5 450 ~ 470 MHz Output IP31) (dBm) 45 Noise Figure (dB) 6.2 Device Voltage (V) +5 Current (mA) 560 APPLICATION CIRCUIT +5 V 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=86 nH (Coil Inductor) RF IN C1=150 pF L2=10 nH C2=150 pF RF OUT ASX501 L3=5.6 nH C3=15 pF C4=15 pF S-parameters & K-factor 25 5 20 0 S11 (dB) Gain (dB) 15 10 -5 -10 5 0 300 350 400 450 500 550 600 -15 300 350 400 Frequency (MHz) 450 500 550 600 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 300 350 400 450 500 550 600 0 0 500 Frequency (MHz) 3/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier Frequency (MHz) 698 ~ 787 Magnitude S21 (dB) 17.5 Magnitude S11 (dB) -9 Magnitude S22 (dB) -15 LTE Output P1dB (dBm) 33 698 ~ 787 MHz Output IP31) (dBm) 47 Noise Figure (dB) 4.8 Device Voltage (V) +5 Current (mA) 560 APPLICATION CIRCUIT +5 V 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=100 nH (Coil Inductor) RF IN C1=100 pF L2=4.7 nH C2=100 pF RF OUT ASX501 L3=2.2 nH C3=9 pF C4=10 pF S-parameters & K-factor 25 0 20 15 S11 (dB) Gain (dB) -5 10 -10 -15 5 0 400 500 600 700 800 900 1000 -20 400 500 600 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 400 800 900 1000 3 2 1 500 600 700 800 900 1000 0 0 500 Frequency (MHz) 4/15 700 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT CDMA Rx Frequency (MHz) 824 ~ 849 Magnitude S21 (dB) 17.5 Magnitude S11 (dB) -13 Magnitude S22 (dB) -18 Output P1dB (dBm) 30.5 824 ~ 849 MHz Output IP31) (dBm) 46 +5 V Noise Figure (dB) 4.6 Device Voltage (V) +5 Current (mA) 560 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=100 nH (Coil Inductor) C1=100 pF RF IN L2=2.7 nH C2=100 pF RF OUT ASX501 L3=2.7 nH C3=12 pF C4=7 pF S-parameters & K-factor 25 0 20 -5 S11 (dB) Gain (dB) 15 10 -10 -15 5 0 600 700 800 900 1000 1100 1200 -20 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 600 3 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 5/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT CDMA Tx Frequency (MHz) 869 ~ 894 Magnitude S21 (dB) 17.5 Magnitude S11 (dB) -16 Magnitude S22 (dB) -16 Output P1dB (dBm) 31 869 ~ 894 MHz Output IP3 (dBm) 46 +5 V Noise Figure (dB) 4.8 Device Voltage (V) +5 Current (mA) 560 1) 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=100 nH (Coil Inductor) C1=100 pF RF IN L2=2.7 nH C2=100 pF RF OUT ASX501 L3=2.7 nH C3=10 pF C4=6 pF S-parameters & K-factor 0 20 -5 o -40 c o 25 c o 85 c -10 S11 (dB) Gain (dB) 15 10 5 0 600 -15 o -40 c o 25 c o 85 c -20 700 800 900 1000 1100 1200 -25 600 700 800 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 o -40 c o 25 c o 85 c -20 -25 600 700 800 900 1000 1100 1200 1000 1100 3 2 1 1200 0 500 Frequency (MHz) 6/15 900 Frequency (MHz) Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier Current vs. Temperature Gain vs. Temperature 600 20 580 18 16 540 Gain (dB) Current (mA) 560 520 14 500 460 -60 Frequency = 900 MHz 12 480 -40 -20 0 20 40 60 80 100 10 -60 -40 -20 o Temperature ( C) 0 20 40 60 80 100 o Temperature ( C) Output IP3 vs. Tone Power (Frequency = 900 MHz) P1dB vs. Temperature 33 60 55 50 Output IP3 (dBm) P1dB (dBm) 32 31 30 Frequency = 900 MHz 29 45 40 35 30 o -40 c o 25 c o 85 c 25 20 28 -60 -40 -20 0 20 40 60 80 100 15 9 10 o 7/15 11 12 13 14 15 16 17 18 19 20 21 Pout per Tone (dBm) Temperature ( C) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT GSM Rx Frequency (MHz) 890 ~ 915 Magnitude S21 (dB) 17.8 Magnitude S11 (dB) -16 Magnitude S22 (dB) -17 Output P1dB (dBm) 31.5 890 ~ 915 MHz Output IP31) (dBm) 47 +5 V Noise Figure (dB) 4.7 Device Voltage (V) +5 Current (mA) 560 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=100 nH (Coil Inductor) C1=100 pF RF IN L2=2.2 nH C2=100 pF RF OUT ASX501 L3=2.2 nH C3=10 pF C4=6 pF 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 600 -15 -20 700 800 900 1000 1100 1200 -25 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 600 3 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 8/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT GSM Tx Frequency (MHz) 935 ~ 960 Magnitude S21 (dB) 17.6 Magnitude S11 (dB) -18 Magnitude S22 (dB) -18 Output P1dB (dBm) 31.5 935 ~ 960 MHz Output IP3 (dBm) 47 +5 V Noise Figure (dB) 4.5 Device Voltage (V) +5 Current (mA) 560 1) 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=100 nH (Coil Inductor) C1=100 pF RF IN L2=2.2 nH C2=100 pF RF OUT ASX501 L3=2.2 nH C3=9 pF C4=6 pF S-parameters & K-factor 0 25 -5 20 -10 S11 (dB) Gain (dB) 15 10 -15 -20 5 0 600 -25 700 800 900 1000 1100 1200 -30 600 700 800 900 1000 1100 1200 Frequency (MHz) Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 600 3 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 9/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT PCS Rx Frequency (MHz) 1750 ~ 1780 Magnitude S21 (dB) 12.0 Magnitude S11 (dB) -16 Magnitude S22 (dB) -17 Output P1dB (dBm) 31 1750 ~ 1780 MHz Output IP31) (dBm) 47 +5 V Noise Figure (dB) 4.6 Device Voltage (V) +5 Current (mA) 560 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=39 nH (Coil Inductor) C2=56 pF C1=56 pF RF IN RF OUT ASX501 C3=4 pF 1 mm 2.5 mm C4=3 pF S-parameters & K-factor 20 0 -5 15 S11 (dB) Gain (dB) -10 10 -15 5 -20 0 1500 1600 1700 1800 1900 2000 -25 1500 1600 1700 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 1500 1900 2000 3 2 1 1600 1700 1800 1900 2000 0 500 Frequency (MHz) 10/15 1800 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT PCS Tx Frequency (MHz) 1840 ~ 1870 Magnitude S21 (dB) 11.5 Magnitude S11 (dB) -16 Magnitude S22 (dB) -18 Output P1dB (dBm) 31 1840 ~ 1870 MHz Output IP3 (dBm) 47 +5 V Noise Figure (dB) 4.6 Device Voltage (V) +5 Current (mA) 560 1) 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=39 nH (Coil Inductor) C1=56 pF RF IN RF OUT C2=56 pF ASX501 2.5 mm C3=3.9 pF C4=2.7 pF S-parameters & K-factor 0 20 -5 15 S11 (dB) Gain (dB) -10 10 5 0 1600 -15 -20 1700 1800 1900 2000 2100 -25 1600 1700 1800 1900 2000 2100 Frequency (MHz) Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 2 1 -25 -30 1600 3 1700 1800 1900 2000 2100 0 500 Frequency (MHz) 11/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT WCDMA Rx Frequency (MHz) 1920 ~ 1980 Magnitude S21 (dB) 11.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -13 Output P1dB (dBm) 31 1920 ~ 1980 MHz Output IP31) (dBm) 47 +5 V Noise Figure (dB) 5.0 Device Voltage (V) +5 Current (mA) 560 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C5=1 F C4=100pF L1=27 nH (Coil Inductor) C1=56 pF RF IN RF OUT C2=1.2 pF ASX501 4.5 mm C3=3.3 pF L2=2.2 nH S-parameters & K-factor 20 0 -5 15 S11 (dB) Gain (dB) -10 10 -15 -20 5 -25 0 1700 1800 1900 2000 2100 2200 -30 1700 1800 1900 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 1700 2100 2200 3 2 1 0 1800 1900 2000 2100 2200 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 12/15 2000 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT WCDMA Tx Frequency (MHz) 2110 ~ 2170 Magnitude S21 (dB) 9.0 Magnitude S11 (dB) -20 Magnitude S22 (dB) -6 Output P1dB (dBm) 31 2110 ~ 2170 MHz Output IP3 (dBm) 47 +5 V Noise Figure (dB) 5.6 Device Voltage (V) +5 Current (mA) 560 1) 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C5=1 F C4=100pF L1=39 nH (Coil Inductor) C1=56 pF RF IN RF OUT C2=1.2 pF ASX501 4.5 mm C3=2.7 pF L2=1.5 nH S-parameters & K-factor 0 20 -5 15 S11 (dB) Gain (dB) -10 10 -15 -20 5 -25 0 1900 2000 2100 2200 2300 2400 -30 1900 2000 2100 2200 2300 2400 Frequency (MHz) Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 1900 0 2000 2100 2200 2300 2400 0 500 13/15 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier APPLICATION CIRCUIT P1dB of about 36 dBm solution Frequency (MHz) 908 915 923 Magnitude S21 (dB) 17.1 17.0 16.9 Magnitude S11 (dB) -30 -30 -30 Magnitude S22 (dB) -25 -25 -25 Output P1dB (dBm) 35.5 35.5 35.5 Output IP3 (dBm) 48.0 48.5 49.0 Noise Figure (dB) 5.0 4.9 4.9 Device Voltage (V) +5 +5 +5 Current (mA) 1120 1120 1120 1) RFID (908 ~ 923 MHz) +5 V 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Schematic Board Layout (FR4, 59.5x39.5 mm2, 0.8T) Vcc=5 V D1=5.6V Zener Diode C6=1 F C5=100pF L1=100 nH (Coil Inductor) C1=100 pF R2=51 C2=100 pF ASX501 L2=2.7 nH RF IN 7 mm C3=10 pF *Coupler C4=7.5 pF RF OUT *Coupler R1=51 7 mm C7=100 pF C8=100 pF ASX501 L4=2.7 nH C9=10 pF C10=7.5 pF L3=100 nH (Coil Inductor) C11=100pF *Coupler: Anaren, XC0900A-03S C12=1 F D2=5.6V Zener Diode Vcc=5 V 25 0 20 -10 15 -20 S11 (dB) Gain (dB) S-parameters & K-factor 10 -40 5 0 700 -30 750 800 850 900 950 1000 1050 1100 -50 700 750 800 5 -10 4 Stability Factor 0 S22 (dB) -20 -30 950 1000 1050 1100 3 2 0 750 800 850 900 950 1000 1050 1100 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 14/15 900 1 -40 -50 700 850 Frequency (MHz) Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX501 250 ~ 2500 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 15/15 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017