CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3301JPT CURRENT 7.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * P-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 MARKING 1.75 (0.069) 1.35 (0.053) * 3301 .25 (0.010) .05 (0.002) CIRCUIT 8 1 D D D D S S S G 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM3301JPT Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous -7.0 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -25 2500 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2006-12 RATING CHARACTERISTIC CURVES ( CHM3301JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-6.0A 26 32 VGS=-4.5V, ID=-4.0A 38 50 VDS = -10V , ID = -6.0A mΩ S 5 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr VDS=-15V, ID=-6.0A VGS=-10V 19 25 4 nC 2.5 V DD= -15V 13 25 Rise Time I D = -1.0A , VGS = -10 V 6 15 t off Turn-Off Time RGEN= 6 Ω 58 115 tf Fall Time 22 45 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.0A , VGS = 0 V (Note 2) (Note 1) -7.0 A -1.2 V RATING CHARACTERISTIC CURVES ( CHM3301JPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 10 50 V G S =1 0 V 8.0V 8 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 40 VG S =6 . 0 V 30 VG S =5 . 0 V 20 VG S =4 . 0 V 10 6 4 TJ=-55°C TJ=125°C 2 TJ=25°C VG S =3 . 0 V 0 0 0 6.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 R DS(on) , NORMALIZED 4 2 5 10 Qg , TOTAL GATE CHARGE (nC) 15 20 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 6 0 THRESHOLD VOLTAGE 4.0 5.0 6.0 VGS=-10V ID=-6.0A 1.9 0 Vth , NORMALIZED GATE-SOURCE 3.0 Figure 4. On-Resistance Variation with Temperature 2.2 VDS=-15V ID=-6A 8 1.3 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200