APTGF75DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 VCES = 1200V IC = 75A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 14 Q1 CR1 CR3 18 22 7 23 8 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 19 Q4 CR2 CR4 4 3 29 30 31 15 32 16 R1 28 27 26 25 29 16 30 15 31 14 32 13 2 3 4 7 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 20 19 18 23 22 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Reverse Bias Safe Operating Area Tj = 150°C 150A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V April, 2009 IC Max ratings 1200 100 75 150 ±20 500 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF75DH120T3G – Rev 0 Symbol VCES APTGF75DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 3.9 4.5 Max 250 500 3.7 Unit 6.5 ±500 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres QG Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data VGE=±15V, IC=75A VCE=600V Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C RG = 7.5Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Typ 5.1 0.7 0.4 nF 0.8 µC 120 50 310 20 ns 130 60 360 ns 30 9 mJ 4 450 A Diode ratings and characteristics (CR2 & CR3) Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C 60 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C Tj = 125°C 350 560 2890 Unit V µA A 3 April, 2009 IRM Test Conditions V ns nC CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2-5 APTGF75DH120T3G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF75DH120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.25 0.9 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF75DH120T3G – Rev 0 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGF75DH120T3G Typical Performance Curve Output Characteristics 150 125 125 TJ=25°C 75 50 VGE=20V VGE=12V 75 VGE=9V 25 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 150 28 VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 125°C 24 125 20 E (mJ) 100 TJ=125°C 75 50 Eon 16 12 8 TJ=25°C 25 Eoff 4 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 35 175 25 20 150 125 Eon IC (A) VCE = 600V VGE =15V IC = 75A TJ = 125°C 30 E (mJ) VGE=15V 50 TJ=125°C 25 IC (A) TJ = 125°C 100 100 IC (A) IC (A) Output Characteristics (VGE=15V) 150 15 10 100 75 VGE=15V TJ=125°C RG=7.5 Ω 50 Eoff 25 5 0 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 70 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 April, 2009 IGBT 0.25 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF75DH120T3G – Rev 0 Thermal Impedance (°C/W) 0.3 APTGF75DH120T3G Forward Characteristic of diode VCE=600V D=50% RG=7.5 Ω TJ=125°C TC=75°C 80 ZVS 60 150 125 100 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZCS 40 75 50 hard switching 20 TJ=125°C TJ=25°C 25 0 0 0 20 40 60 80 0 100 0.5 IC (A) 1 1.5 2 VF (V) 2.5 3 3.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 Diode 0.9 0.7 0.6 0.5 0.4 0.2 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF75DH120T3G – Rev 0 April, 2009 rectangular Pulse Duration (Seconds)