Z ibo Seno Electronic Engineering Co., Ltd. EGF2A – EGF2M 2.0A SURFACE MOUNT ULTRAFAST DIODE Features Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 5 0A Peak J Low Power Loss A C Ultra-Fast Recovery Time H Plastic Case Material has UL Flammability Classification Rating 94V-O ! ! ! ! ! D G E SMA Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC SMB/DO-214AA, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Lead Free: For RoHS / Lead Free Version SMB Dim Min Max Min Max A 2.29 2.92 3.30 3.94 B 4.00 4.60 4.06 4.57 C 1.27 1.63 1.96 2.21 D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 2.01 2.62 2.00 2.62 J All Dimensions in mm Maximum Ratings and Electrical Characteristics Symbol Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current EGF2A EGF2B EGF2D EGF2G EGF2J EGF2K EGF2M Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 800 V IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage @IF = 2.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage @TL = 100°C @TA=25°C unless otherwise specified 1.0 1.3 1.7 V 10 500 µA Reverse Recovery Time (Note 1) trr Typical Junction Capacitance (Note 2) Cj 25 pF RJL 30 °C/W Tj, TSTG -65 to +150 °C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 50 75 nS Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. EGF2A – EGF2M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 2.0 1.0 0 25 75 100 125 150 10 EGF2A – EGF2D EGF2G 1.0 EGF2J – EGF2M 0.1 Tj - 25°C Pulse Width = 300µs 0.01 0 TL , LEAD TEMPERATURE ( ° C) Fig. 1 Forward Current Derating Curve Single Half Sine-Wave (JEDEC Method) 6 0 40 20 Tj = 150°C 1 10 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (mA) IFSM, PEAK FORWARD SURGE CURRENT (A) 40 50 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) EGF2A – EGF2M 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 1000 100 Tj = 100°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit EGF2A – EGF2M 2 of 2 www.senocn.com Alldatasheet