AP90T03GR
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On- resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
4mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
30
V
+20
V
ID@TC=25℃
Continuous Drain Current, VGS@10V
75
A
ID@TC=100℃
Continuous Drain Current, VGS@10V
63
A
350
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
1.3
℃/W
62
℃/W
1
200901063
AP90T03GR
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
30
-
-
V
VGS=10V, ID=45A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
0.8
-
3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
60
96
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
VDS=15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
66
-
ns
tf
Fall Time
RD=0.5Ω
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
4090 6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
IS=30A, VGS=0V,
-
51
-
ns
dI/dt=100A/µs
-
63
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T03GR
200
160
o
T C =25 C
T C = 1 50 C
140
ID , Drain Current (A)
ID , Drain Current (A)
160
10V
7.0V
5.0V
4.5V
V G =3.0V
o
10V
7.0V
5.0V
4.5V
120
V G =3.0V
80
120
100
80
60
40
40
20
0
0
0
1
2
0
3
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
6.0
I D =20A
I D = 45 A
V G =10V
1.8
T C =25 o C
Normalized R DS(ON)
RDS(ON) (mΩ)
1.5
5.0
4.0
1.3
1.0
0.8
0.5
0.3
3.0
0.0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
15
1.5
T j =25 o C
VGS(th) (V)
Is (A)
50
o
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
T j , Junction Temperature ( C)
10
5
1
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GR
14
f=1.0MHz
10000
C iss
V DS =15V
V DS =20V
V DS =24V
10
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
12
8
C oss
1000
C rss
6
4
2
100
0
0
20
40
60
80
100
1
120
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Normalized Thermal Response (Rthjc)
1
ID (A)
100us
1ms
10
10ms
100ms
DC
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4