CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST3410, CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for battery driven, handheld devices requiring high current and low VCE(SAT) voltages. MARKING CODES: CMST3410: C03 CMST7410: C07 SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A mW °C °C/W 40 25 6.0 1.0 1.5 275 -65 to +150 455 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMST3410 CMST7410 SYMBOL TEST CONDITIONS MIN TYP TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100µA 40 BVCEO IC=10mA 25 BVEBO IE=100µA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 25 VCE(SAT) IC=100mA, IB=10mA 35 40 VCE(SAT) IC=200mA, IB=20mA 75 80 VCE(SAT) IC=500mA, IB=50mA 130 150 VCE(SAT) IC=800mA, IB=80mA 200 220 VCE(SAT) IC=1.0A, IB=100mA 250 275 VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz (CMST3410) Cob VCB=10V, IE=0, f=1.0MHz (CMST7410) MAX 100 100 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V 300 10 15 MHz pF pF R1 (9-February 2010) CMST3410 NPN CMST7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMST3410 NPN CMST7410 PNP LEAD CODE: 1) Base 2) Emitter 3) Collector LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C03 MARKING CODE: C07 R1 (9-February 2010) w w w. c e n t r a l s e m i . c o m