Kexin BC818A-16 Npn transistor Datasheet

Transistors
SMD Type
NPN Transistors
BC818A (KC818A)
SOT-23-3
Unit: mm
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
High collector current.
1
0.55
For general AF applications.
+0.2
1.6 -0.1
+0.2
2.8 -0.1
Features
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
High current gain.
1.1
+0.2
-0.1
Low collector-emitter saturation voltage.
● Complementary PNP type available(BC808A)
1. Base
0-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base v oltage
VCBO
30
V
Collector-emitter v oltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
500
mA
Peak collector current
ICM
1
A
Base current
IB
100
mA
power dissipation
PD
310
mW
Junction temperature
Tj
Storage temperature
Tstg
+0.1
0.68 -0.1
2. Emitter
3. Collector
150
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector to base breakdown voltage
V CBO
IC = 10
A, IE = 0
30
V
Collector to emitter breakdown voltage
V CEO
IC = 10 mA, IB = 0
25
V
Emitter to base breakdown voltage
VEBO
IE = 10
5
A, IC = 0
V
VCB = 25 V, IE = 0
100
nA
Collector cutoff current
ICBO
VCB = 25 V, IE = 0 , TA = 150
50
A
Emitter cutoff current
IEBO
VEB = 4 V, IC = 0
100
nA
hFE
IC = 100 mA, VCE = -1 V
BC818A-16
DC current gain *
BC818A-25
BC818A-40
100
160
250
160
250
400
250
350
630
Collector saturation voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
0.7
Base to emitter voltage *
VBE(sat) IC = 500 mA, IB = 50 mA
1.2
Collector-base capacitance
CCb
Emitter-base capacitance
Ceb
Transition frequency
* Pulsed: PW
fT
350 us, duty cycle
VCB = 10 V, f = 1 MHz
6
V
V
pF
VEB = 0.5 V, f = 1 MHz
60
pF
IC = 50 mA, VCE = 5 V, f = 100 MHz
170
MHz
2%
Marking
NO.
BC818A-16
BC818A-25
BC818A-40
Marking
6E
6F
6G
www.kexin.com.cn
1
Similar pages