Seme LAB BUX12 Npn multi - epitaxial power transistor Datasheet

BUX12
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
2
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
1
NPN MULTI - EPITAXIAL
POWER TRANSISTOR
FEATURES
• HIGH CURRENT
• FAST SWITCHING
3
(case)
• HIGH RELIABILITY
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
TO–3
PIN 1 — Base
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (IE = 0)
300V
VCEX
Collector – Emitter Voltage (VBE = –1.5V)
300V
VCEO
Collector – Emitter Voltage (IB = 0)
250V
VEBO
Emitter – Base Voltage (IC = 0)
7V
IC
Collector Current
20A
ICM
Peak Collector Current (tp = 10 ms)
25A
IB
Base Current
4A
Ptot
Total Power Dissipation at Tcase ≤ 25°C
Tstg,
Storage Temperature
–65 to 200°C
Tj
Junction Temperature
200°C
Semelab plc.
150W
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
Prelim.10/98
BUX12
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus)*
Collector - Emitter Sustaining
Voltage
Test Conditions
Min.
Typ.
Max. Unit
IC = 0.2mA
250
V
7
V
VEBO
Emitter – BaseVoltage
IE = 50mA
ICEO
Collector Cut-off Current
VCE = 200V
ICEX
Collector Cut-off Current
1.5
VCE = 300V
VBE = –1.5V
1.5
VCE = 300V
VBE = –1.5V
6
mA
mA
TC = 125°C
IEBO
VCE(sat)*
VBE(sat)*
hFE*
IS/b
Emitter Cut-off Current
IC = 0
VEB = 5V
Collector – Emitter
IC = 5A
IB = 0.5A
0.22
1
Saturation Voltage
IC = 10A
IB = 1.25A
0.5
1.5
IC = 10A
IB = 1.25A
1.23
1.5
IC = 5A
VCE = 4V
20
IC = 10A
VCE = 4V
10
Second Breakdown
VCE = 30V
t = 1s
5
Collector Current
VCE = 140V
t = 1s
0.15
IC = 1A
VCE = 15V
Base – Emitter
Saturation Voltage
DC Current Gain
fT
Transition Frequency
ton
Turn–On Time
ts
Storage Time
IC = 10A
tf
Fall Time
IB2 = –1.25A
f = 10MHz
IC = 10A
IB1 =1.25A
1
mA
60
V
—
A
8
MHz
0.28
1
IB1 =1.25A
1.45
2
VCC = 150V
0.23
0.5
VCC = 150V
V
µs
THERMAL CHARACTERISTICS
RθJCThermal Resistance Junction to Case
Semelab plc.
1.17
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
°C/W
Prelim.10/98
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