CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description LO RF The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. IF -5 Conversion loss (dB) Main Features ■ W-band LO and RF frequency range ■ Low conversion loss ■ IF from DC to 100MHz ■ High LO/RF isolation ■ High LO/AM noise rejection ■ Very low IF noise ■ Low LO input power ■ Small chip size: 1.53 x 1.17 x 0.10 mm -7,5 -10 -12,5 -15 75 75,5 76 76,5 77 77,5 LO Frequency (GHz) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO,F_RF F_IF Parameter LO,RF frequency range IF frequency range Typ Unit 76-77 GHz DC-100 MHz Lc Conversion loss 7.5 dB I_LO/RF LO/RF isolation 20 dB -158 dBm/Hz N_IF IF noise density @ 100kHz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCH21790192 - 22-Jun-00 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 78 W-band Mixer CHM2179a Electrical Characteristics Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical assembly and RF configuration” Symbol F_LO,F_RF F_IF Parameter Min LO,RF frequency range IF frequency range Lc Conversion loss P_LO LO input power Typ Max Unit 76-77 GHz DC-100 MHz 7.5 9 dB 5 7 dBm 3 VSWR_LO LO port VSWR (50Ω) 2:1 VSWR_RF RF port VSWR (50Ω) 2:1 IF_load IF load impedance 200 Ω I_LO/RF LO/RF isolation 22 dB 27 dB -158 dBm/Hz 1 mA R_AM_LO N_IF Id 17 LO AM noise rejection IF noise density @ 100kHz (1) Supply current (2) (1) Measured on 50Ω IF load impedance. (2) See on chapter “Typical bias and IF configuration” Absolute Maximum Ratings (1) Tamb = +25°C Symbol Values Unit Supply current 3 mA P_LO Maximum peak input power overdrive at LO port (2) 10 dBm P_RF Maximum peak input power overdrive at RF port (2) 10 dBm Id Parameter Top Operating temperature range -40 to +100 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s Ref. : DSCH21790192 - 22-Jun-00 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice W-band Mixer CHM2179a Chip Mechanical Data and Pin References 3 2 1 4 5 6 11 10 9 8 7 Unit = µm External chip size = 1530 x 1170 Chip thickness = 100 +/- 10 HF Pads (2,5) = 68 x 118 DC/IF Pads = 100 x 100 Pin number Pin name 1,3,4,6 2 5 7 8 9 10 11 LO RF GND IF C_ext +V Ref. : DSCH21790192 - 22-Jun-00 Description Ground : should not be bonded. If required, please ask for more information. LO input RF input Ground (optional) Not Connected IF output Bias decoupling Positive supply voltage 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice W-band Mixer CHM2179a Typical Bias and IF Configuration Several external configurations are possible for bias and IF. The objective is to give flexibility for the integration. As this component is mainly dedicated to low IF use, there are several possibilities for interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω, however depending on the IF amplifier noise characteristic this load can be modified in order to optimise the noise figure. A series capacitor, between IF output and the load is recommended. Due to high sensitivity to electrical discharges a integrated resistance is used and two ports are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the other one is for the supply voltage connection through an external series resistance (+V port). However, in order to keep the compatibility with the CHM2179, only the “C_ext” port can be used. +V +V R_load_IF R_load_IF C_bias C_ext R_bias1 +V C_bias C_IF R_bias2 C_IF IF C_ext +V IF 1k 1k RF LO RF LO Other possible configuration Recommended external bias and IFconfiguration (compatible with the previous version) The recommended values for external components are: C_bias R_bias1 R_bias2 R_load_IF R_bias*C >> 1/F_IF 2.9kΩ for 1mA current consumption (V = 4.5V, typical LO power) R_bias2 = R_bias1 + 1kΩ From 50 to 200Ω Notes:: 1. R_bias = R_bias1 + 1kΩ when “+V” port is used, otherwize R_bias = R_bias2 2. R_bias can be adjusted if necessary; This allows to optimise the performances when some parameters are different from recommended ones (Supply voltage, LO power …). However maximum ratings for the current have to be taken into account. 3. A series capacitor at IF outputs is recommended for DC decoupling. Ref. : DSCH21790192 - 22-Jun-00 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice W-band Mixer CHM2179a Typical Assembly and RF Configuration In order to use acceptable wire bonding length, compatible with automatic pick and place and wire bonding equipment, an external matching network is proposed on low dielectric constant substrate. 50 Ohm L ~ 0.25nH 11 1 L ~ 0.25nH 250 150 420 860 Er ~ 2.2 h = 0.127mm 390 120 100 3 2 10 9 8 7 5 4 390 100 120 200 6 Er ~ 2.2 h = 0.127mm 630 320 200 390 390 50 Ohm Example of integration using low dielectric constant substrate : Er=2.2, heigh=0.127mm (dimensions are in µm) Ref. : DSCH21790192 - 22-Jun-00 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice W-band Mixer CHM2179a Ordering Information Chip form : CHM2179a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCH21790192 - 22-Jun-00 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice