EPIGAP EPC-660-0.9 Photodiode-chip Datasheet

Photodiode-Chip
EPC-660-0.9
Preliminary
11.04.2007
rev. 07/07
Wavelength range
Type
Technology
Electrodes
Red, selective
Integrated filter
AlGaAs/GaAs
P (anode) up
860
typ. dimensions (µm)
800
720
typ. thickness
260 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
red-selective photodiode
with narrow response
range (660 nm peak)
Applications
Optical communications,
safety equipment, light
barriers
PD-03
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
A
0.62
mm²
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
Typ
Max
Unit
Active area
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
VR = 0 V
Peak sensitivity
Symbol
Min
λP
660
nm
Spectral range at 50 %
VR = 0 V
λ0.5
Responsivity at λP1
VR = 0 V
Sλ
0.2
A/W
Responsivity at λP2
VR = 0 V
Sλ
0.42
A/W
Spectral bandwidth at 50%
VR = 0 V
∆λ0,5
80
nm
Dark current
VR = 1 V
ID
40
Junction capacitance
VR = 0 V
CJ
40
pF
Switching time
VR = 1 V
tr, tf
40
ns
620
700
nm
300
pA
1
Measured on bare covered chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
2
Labeling
Type
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
EPС-660-0.9
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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Photodiode-Chip
EPC-660-0.9
Preliminary
11.04.2007
rev. 07/07
Typical responsivity spectrum
Sensitivity (arb. units)
1,0
0,8
0,6
0,4
0,2
0,0
500
550
600
650
700
750
800
Wavelength [nm]
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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