RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN VG Pin 1 (CUT ) RF OUT T VD Pin 2 Supports Multiple Pulse Conditions G GND B BASE 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances Functional Block Diagram 50V Operation Typical Performance Output Pulsed Power 280W Pulse Width 100S, Duty Cycle 10% Small Signal Gain 17dB High Efficiency 55% -40°C to 85°C Operating Temperature Applications Radar Product Description The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Air Traffic Control and Surveillance General Purpose Broadband Amplifiers Ordering Information RFHA1025S2 RFHA1025SB RFHA1025SQ RFHA1025SR RFHA1025TR13 RFHA1025PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 50 Pieces on 7” short reel 250 Pieces on 13” reel Fully assembled evaluation board 0.96GHz to .215GHz;50V Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT SOI RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120928 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 10 RFHA1025 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to 2 V Gate Current (IG) 155 mA Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 250 °C Operating Junction Temperature (TJ) Human Body Model Class 1B MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Hours Thermal Resistance, RTH (junction to case): TC = 85°C, DC bias only TC = 85°C, 100s pulse, 10% duty cycle TC = 85°C, 1ms pulse, 10% duty cycle 0.90 0.18 0.34 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. °C/W * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Parameter Min. Specification Typ. Max. Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) 50 -8 Drain Bias Current Frequency of Operation -3 V -2 440 960 V mA 1215 MHz IG (OFF) – Gate Leakage 2 mA VG = -8V, VD = 0V ID (OFF) – Drain Leakage 2.5 mA VG = -8V, VD = 50V DC Functional Test VGS (TH) – Threshold Voltage -3.5 V VD = 50V, ID = 40mA VDS (ON) – Drain Voltage at High Current 0.28 V VG = 0V, ID = 1.5A RF Functional Test [1], [2] Small Signal Gain 17 dB f = 960MHz, PIN = 28dBm 13 14.2 dB f = 960MHz, PIN = 41dBm Output Power 54 55.2 dBm Drain Efficiency 50 55 % 17 dB f = 1215MHz, PIN = 28dBm 13 13.6 dB f = 1215MHz, PIN = 41dBm Output Power 54 54.6 dBm Drain Efficiency 50 59 % Power Gain Input Return Loss -7.5 Small Signal Gain Power Gain Input Return Loss 2 of 10 -7 -5 -5 dB dB 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120928 RFHA1025 Parameter Min. Specification Typ. Max. Unit RF Typical Performance Condition [1], [2] Frequency Range 960 1215 MHz Small Signal Gain 17 dB PIN = 28dBm Power Gain 14 dB POUT = 54.5dBm Gain Variation with Temperature Output Power (PSAT) Drain Efficiency dB/°C 54.5 dBm 280 W 55 % At peak output power Peak output power At peak output power [1] Test Conditions: PW = 100s, DC = 10%, VDSQ = 50V, IDQ = 440mA, T = 25°C. [2] Performance in a standard tuned test fixture. DS120928 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 10 RFHA1025 Typical Performance in Standard Fixed Tuned Test Fixture (T = 25°C, unless noted) GainversusOutputPower(f=1100MHz) (Pulsed10%dutycycle,PW=100ђƐ,VD=50V, EfficiencyversusOutputPower(f=1100MHz) IDQ =440mA) (Pulsed10%dutycycle,PW=100μS,VD =50V,IDQ=440mA) 20 70 19 60 DrainEfficiency(%) Gain(dB) 18 17 16 15 Gain85°C Gain25°C Gain40°C 14 Eff85°C Eff25°C Eff40°C 50 40 30 20 13 10 47 49 51 OutputPower(dBm) 53 45 55 49 51 OutputPower(dBm) 53 55 SmallSignalPerformanceversusFrequency,POUT =45dBm InputReturnLossversusOutputPower(f=1100MHz) (Pulsed10%dutycycle,PW=100μƐ, VD=50V,IDQ =440mA) (Pulsed10%dutycycle,PW=100μS,VD =50V,IDQ=440mA) 19 4 7 Fixedtuned testcircuit 6 18 9 17 11 16 13 15 15 10 12 14 IRL85°C IRL25°C IRL40°C 16 18 Gain 14 20 17 IRL 13 47 49 51 OutputPower(dBm) 53 55 950 Gain/IRLversusFrequency,POUT =54.5dBm 1050 1100 1150 Frequency(MHz) 1200 19 1250 (Pulsed10%dutycycle,PW=100μS,VD=50V,IDQ =440mA) 65 6 Fixedtuned testcircuit 1000 DrainEfficiencyversusFrequency,POUT =54.5dBm (Pulsed10%dutycycle,PW=100ђƐ, VD =50V,IDQ =440mA) 20 19 InputReturnLoss(dB) 8 Gain(dB) IRL,InputReturnLoss(dB) 47 Fixedtuned testcircuit 63 7 61 18 8 17 9 16 10 15 11 12 Gain 13 12 950 4 of 10 1000 57 55 53 51 49 IRL 13 DrainEfficiency(%) 14 InputReturnLoss(dB) Gain(dB) 59 1050 1100 Frequency(MHz) 1150 1200 14 1250 Eff 47 45 950 1000 1050 1100 1150 Frequency(MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1200 1250 DS120928 RFHA1025 Typical Performance in Standard Fixed Tuned Test Fixture (T = 25°C, unless noted) Gain/EfficiencyversusPOUT,Freq=1100MHz POUT/DEversusPulseWidth,Freq=1100MHz 60 18 55 17 50 16 45 15 40 14 Gain 35 13 DrainEff 30 25 12 47 48 49 50 51 52 POUT ,OutputPower(dBm) 53 54 55 POUT(W) 19 DrainEfficiency(%) Gain(dB) 65 400 70 375 65 350 60 325 DrainEff 300 45 40 250 10 100 PulseWidth(μsec) 1000 PulsePowerDissipationDeratingCurve (BasedonMaximumpackagetemperatureandRth) (Pulsed,PW=100μS,VD =50V,IDQ =440mA) 375 70 1200 350 65 1000 325 60 300 55 275 50 OutputPower 1mSPulseWidth,10%DutyCycle PowerDissipation(W) 100SPulseWidth,10%DutyCycle DrainEfficiency(%) POUT (W) 50 275 POUT/DEversusDutyCycle,Freq=1100MHz 250 55 OutputPower DrainEfficiency(%) (Pulsed10%dutycycle,VD =50V,IDQ =440mA) (Pulsed10%dutycycle,PW=100μS,VD =50V,IDQ =440mA) 20 800 600 400 45 200 40 0 DrainEff 225 10 DS120928 15 20 25 30 35 DutyCycle(%) 40 45 50 0 20 40 60 80 100 120 140 MaximumCaseTemperature(°C) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 10 RFHA1025 Package Drawing (All dimensions in mm.) 16.700 0.600± 0.05 2 MIN 3.5 MAX 3.000 3.100 4x 2.600 4x 15.800 17.40± 0.1 8.000 2 MIN 3.5 MAX 0.254±0.127 Lid 3.000 0.600± 0.05 4.054±0.327 1.400 3.800±0.2 20.400 0.100+0.05 -0.02 24.00± 0.1 Pin Names and Descriptions Pin 1 2 3 6 of 10 Name RF IN VG RF OUT VD GND BASE Description Gate – VG RF Input Drain – VD RF Output Source – Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120928 RFHA1025 Bias Instruction for RFHA1025 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -8V to VG. 4. Apply 50V to VD. 5. Increase VG until drain current reaches 440mA or desired bias point. 6. Turn on the RF input. IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD must be removed before VG is removed. Failure to follow this sequence will cause the device to fail. NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended that a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board . DS120928 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 10 RFHA1025 Evaluation Board Schematic VDRAIN VGATE C15 C16 + C14 + R3 C13 L5 L6 L3 L4 R2 C12 C9 R1 C6 C11 C7 C10 C8 L2 L1 J1 RF IN 50 strip RFHA1025 C4 C1 C17 C3 C5 J2 RF OUT 50 strip C2 Evaluation Board Bill of Materials 8 of 10 Component Value Manufacturer Part Number R1,R3 R2 C6 C4, C5, C9, C10 C2, C3 C17 C12 C13 C7 C8 C14, C16 L1,L2 L5, L6 L3, L4 C1, C11, C15 10 51 82pF 100pF 2pF 0.2pF 10000pF 0.1F 10000pF 0.1F 10F 68nH 115, 10A 75, 10A NOT POPULATED Panasonic Panasonic ATC ATC ATC ATC Panasonic Panasonic Panasonic Panasonic Panasonic Coilcraft Steward Steward - ERJ-8GEYJ100V ERJ-8GEYJ510 ATC800A820JT ATC800A101JT ATC800A2R0BT ATC800A0R2BT ECJ-2VB1H103K ECJ-2VB1H104K ECJ-2VB2A103K ECJ-2VB2A104K ECA-2AM100 1812SMS-68NJLB 28F0181-1SR-10 35F0121-1SR-10 - 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120928 RFHA1025 Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load () 960MHz 68 - j10 63 – j20 1100MHz 55 + j30 65 + j32 1215MHz 30 + j20 40 + j30 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. DS120928 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 10 RFHA1025 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. 10 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120928