Yea Shin BCW70 General purpose transistor Datasheet

DATA SHEET
BCW70
SEMICONDUCTOR
General Purpose Transistors
H
PNP Silicon
Featrues
Pb-Free Package is Available.
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
– 45
Vdc
Emitter–Base Voltage
V
– 5.0
Vdc
– 100
mAdc
Collector Current — Continuous
EBO
IC
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RθJA
556
°C/W
PD
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
2
3
COLLECTOR
1
BASE
2
RθJA
TJ , Tstg
EMITTER
DEVICE MARKING
BCW69 = H1; BCW70= H2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V (BR)CEO
– 45
—
Vdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 )
V (BR)CES
– 50
—
Vdc
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
V (BR)EBO
– 5.0
—
Vdc
(VCE = –20 Vdc, I E = 0 )
—
– 100
nAdc
(VCE = –20 Vdc, I E = 0 , TA = 100°C)
—
– 10
µAdc
Collector Cutoff Current
I CEO
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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DEVICE CHARACTERISTICS
BCW70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
( IC= –2.0 mAdc, VCE = –5.0 Vdc )
hFE
—
BCW69
120
260
BCW70
Collector–Emitter Saturation Voltage
( IC = – 10 mAdc, IB = –0.5 mAdc )
215
500
—
– 0.3
Vdc
– 0.6
– 0.75
Vdc
C obo
—
7.0
pF
NF
—
10
dB
V CE(sat)
Base–Emitter On Voltage
( IC = – 2.0 mAdc, V CE = – 5.0Vdc )
V
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
( I E= 0 V CB = –10Vdc, f = 1.0 MHz)
Noise Figure
(V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Ordering Information
Device
Marking
Shipping
BCW69
H1
3000/Tape&Reel
BCW70
H2
3000/Tape&Reel
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DEVICE CHARACTERISTICS
BCW70
TYPICAL NOISE CHARACTERISTICS
(V CE = – 5.0 Vdc, T A = 25°C)
10
10.0
BANDWIDTH = 1.0 Hz
R ~
~0
30µA
100µA
300µA
1.0mA
1.0
10
20
50
100
200
S
IC=1.0mA
3.0
5.0
2.0
8
5.0
IC=10 µA
3.0
BANDWIDTH = 1.0 Hz
R ~
~
7.0
S
I n , NOISE CURRENT (pA)
e n , NOISE VOLTAGE (nV)
7.0
500 1.0k
2.0k
5.0k
2.0
300µA
1.0
0.7
100µA
0.5
30µA
0.3
0.2
10µA
0.1
10
10k
20
50
100
200
500
1.0k
2.0k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
5.0k
10k
NOISE FIGURE CONTOURS
(V CE = – 5.0 Vdc, T A = 25°C)
1.0M
1.0M
BANDWIDTH = 1.0 Hz
500k
R S , SOURCE RESISTANCE ( Ω )
R S , SOURCE RESISTANCE ( Ω )
500k
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
2.0dB
500
3.0 dB
200
100
10
5.0 dB
20
30
50
70
100
200
300
500 700 1.0K
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
2.0k
1.0dB
1.0k
2.0 dB
3.0 dB
500
200
5.0 dB
100
10
20
30
50
70 100
200
300
500 700 1.0K
I C , COLLECTOR CURRENT (µA)
I C , COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
R S , SOURCE RESISTANCE ( Ω )
1.0M
500k
10 Hz to 15.7KHz
200k
100k
Noise Figure is Defined as:
50k
20k
NF = 20 log 10
10k
0.5dB
5.0k
1/ 2
S
e n = Noise Voltage of the Transistor referred to the input. (Figure 3)
2.0k
1.0dB
I n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10 –23 j/°K)
1.0k
2.0dB
3.0 dB
5.0 dB
500
200
100
10
e n 2 + 4KTRS + I n2 R S2
( –––––––––––––––)
4KTR
20
30
50
70
100
200
300
T = Temperature of the Source Resistance (°K)
R s = Source Resistance ( Ω )
500 700 1.0K
I C , COLLECTOR CURRENT (µA)
Figure 5. Wideband
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DEVICE CHARACTERISTICS
BCW70
I C , COLLECTOR CURRENT (mA)
1.0
T J = 25°C
0.8
50 mA
10 mA
I C= 1.0 mA
0.6
100 mA
0.4
0.2
T A = 25°C
PULSE WIDTH =300 µs
DUTY CYCLE<2.0%
80
I B= 400 mA
350µA
250 µA
300µA
200 µA
60
150 µA
40
100 µA
50µA
20
0
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
0
20
15
20
25
30
35
40
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
1.2
1.0
V BE(sat) @ I C /I B = 10
0.6
1.6
*APPLIES for I C / I B< h FE / 2
0.8
∗ θ VC for V CE(sat)
25°C to 125°C
0
–55°C to 25°C
–0.8
V BE(on)@ V CE= 1.0 V
0.4
25°C to 125°C
–1.6
0.2
10
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
T J=25°C
0.8
5.0
I B , BASE CURRENT (mA)
1.4
V, VOLTAGE (VOLTS)
100
θ V , TEMPERATURE COEFFICIENTS (mV/°C)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
V CE(sat) @ I C /I B = 10
θ VB for V BE
–55°C to 25°C
–2.4
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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100
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DEVICE CHARACTERISTICS
BCW70
TYPICAL DYNAMIC CHARACTERISTICS
500
1000
V CC= 3.0 V
IC /I B= 10
T J= 25°C
300
200
500
ts
300
200
t, TIME (ns)
100
t, TIME (ns)
VCC= –3.0 V
IC /I B= 10
IB1=IB2
T J= 25°C
700
70
50
30
tr
20
70
50
tf
30
td @ V BE(off)= 0.5 V
10
100
20
7.0
10
2.0
3.0
5.0
7.0
10
20
30
50
70
–1.0
100
–2.0 –3.0
–5.0 –7.0 –10
–20
–30
–50
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
Figure 11. Turn–Off Time
–70 –100
10.0
500
T J= 25°C
T J = 25°C
7.0
V CE=20 V
C ib
C, CAPACITANCE (pF)
300
5.0 V
200
100
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
5.0
1.0
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
5.0
3.0
C
2.0
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
10
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
Figure 13. Capacitance
1.0
0.7
0.5
ob
20
50
D = 0.5
0.3
0.2
0.2
0.1
0.1
FIGURE 16
DUTY CYCLE, D = t 1 / t 2
0.05
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P(pk)
0.02
0.03
t
0.01
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • RθJA
1
SINGLE PULSE
0.02
t
2
T J(pk) – T A = P (pk) Z
θJA(t)
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
t, TIME (ms)
Figure 14. Thermal Response
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DEVICE CHARACTERISTICS
BCW70
I C , COLLECTOR CURRENT (nA)
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V CC = 30 V
103
I CEO
10
2
I
101
CBO
AND
I CEX @ V BE(off) = 3.0 V
100
10–1
10–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
T J , JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
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A train of periodical power pulses can be represented by the
model as shown in Figure 16. Using the model and the device
thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles.
To find Z θJA(t) , multiply the value obtained from Figure 14 by the
steady state value R θJA .
Example:
Dissipating 2.0 watts peak under the following conditions:
t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
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PACKAGE OUTLINE & DIMENSIONS
BCW70
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
J
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
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inches
mm
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