AP96T07GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 75V RDS(ON) 4.5mΩ ID G 120A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching power applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) ID@TC=25℃ ID@TC=100℃ 175 A Continuous Drain Current, V GS @ 10V 3 120 A Continuous Drain Current, V GS @ 10V 3 120 A 480 A 300 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 4 Value Units 0.5 ℃/W 40 ℃/W 1 200907092 AP96T07GS-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 75 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=40A - - 4.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=40A - 90 - S IDSS Drain-Source Leakage Current VDS=75V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=40A - 92 150 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=60V - 16 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 48 - nC 2 td(on) Turn-on Delay Time VDS=40V - 18 - ns tr Rise Time ID=40A - 90 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 40 - ns tf Fall Time RD=1Ω - 80 - ns Ciss Input Capacitance VGS=0V - 3500 5600 pF Coss Output Capacitance VDS=25V - 1000 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 270 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.1 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V - 70 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 180 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. 2 4.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP96T07GS-HF 300 160 ID , Drain Current (A) ID , Drain Current (A) 250 10V 8.0V 7.0V 6.0V T C = 175 o C 10V 8.0V 7.0V o T C = 25 C 200 6.0V 150 100 120 80 V GS =5.0V 40 V GS =5.0V 50 0 0 0 2 4 6 8 10 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 8 I D =30A I D =40A V G =10V T C =25 o C 7 Normalized RDS(ON) RDS(ON) (mΩ) 2.0 6 5 4 1.6 1.2 0.8 3 0.4 2 4 5 6 7 8 9 -50 10 0 50 100 150 200 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 40 IS(A) 30 T j =175 o C T j =25 o C 20 1.2 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 200 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP96T07GS-HF 12 f=1.0MHz 5000 V DS =40V V DS =45V V DS =60V 10 4000 C iss 8 3000 C (pF) VGS , Gate to Source Voltage (V) I D = 40 A 6 2000 4 1000 C oxx 2 C rss 0 0 0 20 40 60 80 100 1 120 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10ms 10 100ms DC o T c =25 C Single Pulse Normalized Thermal Response (Rthjc) 1000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 1 0.01 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4