MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE CM300DY-24A ¡IC ................................................................... 300A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93±0.25 4 3-M6 NUTS 15 30 E2 E1 C2E1 E2 6 62 48 ±0.25 6 G2 C1 G1 21.5 25 25 24 4-φ6.5 MOUNTING HOLES 18 14 7 18 TAB #110 t=0.5 14 C2E1 E2 C1 G1 E1 LABEL 22.2 30 +0.1 –0.5 8.5 7 E2 G2 18 14 CIRCUIT DIAGRAM Mar. 2004 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG G-E Short C-E Short DC, TC = 80°C*1 Pulse Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage (Note 2) Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value Unit V V A A W °C °C V N•m g (Tj = 25°C) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) Pulse TC = 25°C*1 VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 30mA, VCE = 10V 6 7 8 V — — — — — — — — — — — — — — — — — 1.0 — 2.1 2.4 — — — 1350 — — — — — 9.0 — — — 0.02 — 0.5 3.0 — 47 4 0.9 — 550 180 600 350 250 — 3.8 0.066 0.12 — 16 µA Test conditions Parameter Thermal resistance Ratings 1200 ±20 300 600 300 600 1890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 VGE = VGES, VCE = 0V Tj = 25°C IC = 300A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE1 = VGE2 = 15V RG = 1.0Ω, Inductive load switching operation IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound Applied (1/2 module)*1,*2 Unit mA V nF nC ns ns µC V °C/W Ω *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar. 2004 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 15 13 500 12 400 300 11 200 10 100 9 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 2 0 4 6 8 10 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 200 100 300 400 500 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 7 8 6 IC = 600A IC = 300A 4 2 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C IC = 120A 0 6 8 10 12 14 16 18 101 20 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 7 Cies 101 7 5 3 2 Coes 100 7 5 Cres 5 SWITCHING TIME (ns) 3 2 3 2 600 103 Tj = 25°C 102 CAPACITANCE Cies, Coes, Cres (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 600 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) td(off) tf td(on) 3 2 102 7 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load tr 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar. 2004 MITSUBISHI IGBT MODULES CM300DY-24A REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 102 trr Irr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC’ = 25°C 3 Under the chip 2 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.066°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.12°C/W –3 10 103 7 7 5 3 2 5 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load C snubber at bus Esw(on) 3 2 100 1 10 2 3 5 7 102 2 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 102 Esw(off) 7 Esw(off) 5 3 2 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 Conditions: 7 VCC = 600V VGE = ±15V 3 RG = 1.0Ω Tj = 125°C 2 Inductive load C snubber at bus 101 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) Esw(on) COLLECTOR CURRENT IC (A) 102 5 Err 7 5 3 2 100 1 10 Conditions: VCC = 600V VGE = ±15V 3 IC = 300A Tj = 125°C 2 Inductive load C snubber at bus 102 5 101 0 10 5 7 103 3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 7 7 5 3 2 TIME (s) EMITTER CURRENT IE (A) 101 10–2 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) 5 3 2 Err 101 Conditions: VCC = 600V VGE = ±15V IE = 300A Tj = 125°C Inductive load C snubber at bus 7 5 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) Mar. 2004 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 300A VCC = 400V 16 VCC = 600V 12 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE QG (nC) Mar. 2004