POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF543 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 2500 930 10 70 V A kA µs mag 06 - ISSUE : 07 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2500 V V RSM Non-repetitive peak reverse voltage 125 2600 V V DRM Repetitive peak off-state voltage 125 2500 V I RRM Repetitive peak reverse current V=VRRM 125 150 mA I DRM Repetitive peak off-state current V=VDRM 125 150 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 930 A I T (AV) Mean on-state current 180° sin, 1 kHz, Th=55°C, double side cooled 860 A I TSM Surge on-state current, non repetitive sine wave, 10 ms I² t I² t without reverse voltage V T On-state voltage On-state current = 25 2,9 V T(TO) Threshold voltage 125 1,50 V T On-state slope resistance 125 0,611 mohm r 125 10 500 x1E3 2000 A kA A²s V SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 20V 10 ohm 125 500 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 75% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 1,7 µs tq Circuit commutated turn-off time 125 70 µs di/dt = dV/dt = Q rr I rr Reverse recovery charge Peak reverse recovery current A/µs, I= 1000 I = 800 A 20 200 V/µs , up to 75% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V A VDRM A 125 770 µC 268 A I H Holding current, typical VD=5V, gate open circuit 25 1000 mA I L Latching current, typical VD=5V, tp=30µs 25 1500 mA GATE V GT Gate trigger voltage VD=5V 25 3,5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation 25 150 W P G(AV) Average gate power dissipation 25 3 W R th(j-h) Thermal impedance, DC 26 °C/kW T j Operating junction temperature Pulse width 100 µs MOUNTING F Junction to heatsink, double side cooled Mounting force Mass -30 / 125 °C 14.0 / 17.0 kN 500 tq code ORDERING INFORMATION : ATF543 S 25 U tq code standard specification VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF543 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 07 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 2000 1800 1000 A 1600 Qrr [µC] 1400 500 A 1200 1000 250 A 800 600 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 1200 1000 A 1000 Irr [A] 800 500 A 600 250 A 400 200 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ATF543 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 07 SURGE CHARACTERISTIC Tj = 125 °C 3000 12 2500 10 2000 8 ITSM [kA] On-state Current [A] ON-STATE CHARACTERISTIC Tj = 125 °C 1500 6 1000 4 500 2 0 0 0,6 1,1 1,6 2,1 2,6 1 On-state Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 Zth j-h [°C/kW] 25 20 15 10 5 0 0,001 0,01 0,1 1 10 100 t[s] Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO S.p.Areserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100