CMT02N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220/TO-220FP TO-252 TO-251 Front View Front View Front View N-Channel MOSFET SOURCE DRAIN GATE SOURCE DRAIN GATE SOURCE DRAIN GATE D G 1 1 2 2 3 S 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit A Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation ID 2.0 IDM 9.0 VGS ±20 V VGSM ±40 V PD 50 W 0.4 W/℃ TJ, TSTG -55 to 150 ℃ EAS 20 mJ θJC 1.0 ℃/W θJA 62.5 TL 260 Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2004/12/01 Rev. 1.2 Champion Microelectronic Corporation ℃ Page 1 CMT02N60 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package CMT02N60N251 TO-251 CMT02N60N252 TO-252 CMT02N60N220 TO-220 CMT02N60N220FP TO-220 Full Package CMT02N60GN251* TO-251 CMT02N60GN252* TO-252 CMT02N60GN220* TO-220 CMT02N60GN220FP* *Note: G : Suffix for Pb Free Product TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT02N60 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 600 Typ Max Units V (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current IDSS mA (VDS = 600 V, VGS = 0 V) 0.25 (VDS = 480 V, VGS = 0 V, TJ = 125℃) 1.0 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR 100 nA 3.1 4.0 V 3.3 4.4 Ω 8.8 V (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) VGS(th) Gate Threshold Voltage 2.0 (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) * RDS(on) Drain-Source On-Voltage (VGS = 10 V) VDS(on) (ID = 2.0 A) Forward Transconductance (VDS ≧ 50 V, ID = 1.0A) * gFS Input Capacitance Ciss 435 Coss 56 pF pF (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time (VDD = 300 V, ID = 2.0 A, Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS = 10 V, RG = 18Ω) * (VDS = 400 V, ID = 2.0 A, VGS = 10 V)* Internal Drain Inductance 1.0 mhos Crss 9.2 pF td(on) 12 tr 21 ns ns td(off) 30 ns tf 24 ns Qg 13 Qgs 2.0 22 nC nC Qgd 6.0 nC LD 4.5 nH LS 7.5 nH VSD 1.0 (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 2.0 A, VGS = 0 V, dIS/dt = 100A/µs) 1.6 V ton ** ns trr 340 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 2 CMT02N60 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 3 CMT02N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 C B S F A U T Q PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE A B 1 2 3 C D F Z G H H J K L N Q R S T U V R G L Z J D V N TO-220FP R I 0 0.1 .5 0 C 8± 3.1 J R1 B H Q D R1 .5 0 A A B C D E E H I O P K G J K 60 1. R M N O P G Q b R b b1 b2 e e Front View 2004/12/01 Rev. 1.2 N M b2 b1 R Side View Back View Champion Microelectronic Corporation Page 4 CMT02N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-251 2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 5 CMT02N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-252 2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 6 CMT02N60 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2004/12/01 Rev. 1.2 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 7