BTS7904S OptiMOS® -T PN Half Bridge Product Summary Features • Dual p- and n-channel MOSFET P N V DS -30 55 V R DS(on),max 13 12 mΩ ID -40 40 A • Automotive AEC Q101 qualified • Green package (RoHS compliant) • Ultra low R DS(on) PG-TO220-5-13 • 150 °C operating temperature Type Package Marking BTS7904S PG-TO220-5-13 7904S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Value Symbol Conditions ID Unit P N T C=25 °C -40 40 T C=100 °C -40 40 A Pulsed drain current2) I D,pulse T C=25 °C -160 160 Avalanche energy, single pulse2) E AS I D=±20 A 350 200 mJ Avalanche current, single pulse IAS -40 40 A Gate source voltage V GS -16 / +5 +16 / -163) V Power dissipation2) P tot 96 69 W Operating and storage temperature T j, T stg T C=25 °C -55 ... 150 55/150/56 IEC climatic category; DIN IEC 68-1 1.0 °C page 1 2008-07-08 BTS7904S Parameter Values Symbol Conditions Unit min. typ. max. P R thJC - - 1.3 N - - 1.8 minimal footprint - - 62 6 cm2 cooling area4) - - 45 -30 - - Thermal characteristics Thermal resistance, junction case SMD version, device on PCB5) R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current P V (BR)DSS V GS=0 V, I D=-1 mA N V GS=0 V, I D=1 mA 55 - - P V GS(th) V DS=V GS, I D=-70 µA -1 -1.5 -2.1 N V DS=V GS, I D=40 µA 1.2 1.7 2.2 P I DSS V DS=-18 V, V GS=0 V, T j=25 °C - -0.01 -1 V DS=-18 V, V GS=0 V, T j=125 °C - -1 -100 V DS=18 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=18 V, V GS=0 V, T j=125 °C - 1 100 P I GSS V GS=-16 V, V DS=0 V - -10 -100 N V GS=16 V, V DS=0 V - 1 100 P R DS(on) V GS=-10 V, I D=-20 A - 7.2 13 N V GS=10 V, I D=20 A - 9.7 12 P V GS=-4.5 V, I D=-12.5 A - 17.5 21 N V GS=4.5 V, I D=20 A - 16.8 20.5 N Gate-source leakage current Drain-source on-state resistance 1.0 V page 2 µA nA mΩ 2008-07-08 BTS7904S Parameter Values Symbol Conditions Unit min. typ. max. P C iss - 3900 5200 N - 4600 6100 - 1000 1300 - 570 760 P Crss - 850 1300 N - 550 820 P t d(on) - 22 - N - 15 - - 94 - - 77 - - 104 - - 31 - P tf - 150 - N - 8 - P Q gs - -12 -16 - -30 -45 - -80 -121 - -3.0 - - 20 27 - 32 48 - 82 123 Dynamic characteristics Input capacitance Output capacitance P C oss N Reverse transfer capacitance Turn-on delay time Rise time P tr N Turn-off delay time P t d(off) V DD=15 V, V GS=10 V N: I D=30 A, R G=2 Ω P: I D=-30 A, R G=2 Ω N Fall time V GS=0 V, V DS=±25 V, f =1 MHz pF ns Gate Charge Characteristics2) Gate to source charge Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Gate to source charge N Q gs Gate to drain charge Q gd Gate charge Qg Gate plateau voltage V plateau 1.0 V DD=-24 V, I D=-40 A, V GS=0 to - 10 V V DD=44 V, I D=40 A, V GS=0 to 10 V nC 4.2 page 3 2008-07-08 BTS7904S Parameter Values Symbol Conditions Unit min. typ. max. - - -40 Reverse Diode Diode continuous forward current2) P IS N Diode pulse current P I S,pulse T C=25 °C 40 - - N Diode forward voltage Reverse recovery time2) Reverse recovery charge2) 160 V GS=0 V, I F=-40 A, T j=25 °C - -1.00 -1.2 N V GS=0 V, I F=40 A, T j=25 °C - 0.90 1.2 - 41 - - 47 - - -40 - - 50 - P t rr P Q rr V R=15 V, I F=I S, di F/dt =400 A/µs N 1.0 -160 P V SD N A page 4 V ns nC 2008-07-08 BTS7904S 1 Power dissipation (P) 2 Power dissipation (N) P tot=f(T C), V GS≥6 V P tot=f(T C), V GS≥6 V 80 100 80 60 P tot [W] P tot [W] 60 40 40 20 20 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 T C [°C] 4 Drain current (N) I D=f(T C) I D=f(T C) parameter: V GS≥6 V parameter: V GS≥6 V 45 45 40 40 35 35 30 30 25 25 I D [A] -I D [A] 100 120 140 160 100 120 140 160 T C [°C] 3 Drain current (P) 20 20 15 15 10 10 5 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 T C [°C] T C [°C] 1.0 80 page 5 2008-07-08 BTS7904S 5 Safe operating area (P) 6 Safe operating area (N) I D=f(V DS); T C=25 °C; D =0 I D=f(V DS); T C=25 °C; D =0 parameter: t p parameter: t p 103 103 10 µs 102 1 µs 10 µs 102 100 µs 100 µs I D [A] -I D [A] 1 ms 101 100 1 ms 101 100 10-1 10-1 -1 0 10 1 10 2 10 10-1 10 100 -V DS [V] 101 V DS [V] 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N) Z thJC=f(t p) Z thJC=f(t p) parameter: D =t p/T parameter: D =t p/T 101 101 100 100 Z thJC [K/W] 0.5 Z thJC [K/W] 102 0.1 10-1 0.5 0.1 10-1 0.05 0.05 0.01 single pulse 0.01 single pulse 10-2 10-2 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 t p [s] 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 6 2008-07-08 BTS7904S 9 Typ. output characteristics (P) 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 120 120 -5 V -10 V -4 V 10 V -4.5 V 100 100 80 -3.5 V I D [A] -I D [A] 80 60 40 60 5V 40 4.5 V -3 V 4V 20 20 3.5 V -2.5 V 3V 0 2.5 V 0 0 1 2 3 0 1 2 -V DS [V] 3 V DS [V] 11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 50 50 3V 40 40 30 -3 V R DS(on) [mΩ] R DS(on) [mΩ] 3.5 V -3.5 V 20 30 4V 4.5 V 5V 20 -4 V -4.5 V 10 10 -5 V 10 V -10 V 0 0 0 10 20 30 40 50 60 70 80 -I D [A] 1.0 0 10 20 30 40 50 60 70 80 I D [A] page 7 2008-07-08 BTS7904S 13 Typ. transfer characteristics (P) 14 Typ. transfer characteristics (N) I D=f(V GS); V DS=-6 V I D=f(V GS); V DS=6 V parameter: T j parameter: T j 100 100 80 80 25 °C 25 °C 60 60 -55 °C I D [A] -I D [A] -55 °C 150 °C 150 °C 40 40 20 20 0 0 0 1 2 3 4 0 5 1 2 3 -V GS [V] 4 5 6 7 V GS [V] 15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=-20 A; V GS=-10 V R DS(on)=f(T j); I D=20 A; V GS=10 V 16 22 20 14 18 16 14 10 R DS(on) [mΩ] R DS(on) [mΩ] 12 8 6 12 10 8 6 4 4 2 2 0 0 -60 -20 20 60 100 140 -60 T j [°C] 1.0 -20 20 60 100 140 T j [°C] page 8 2008-07-08 BTS7904S 17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS V GS(th)=f(T j); V GS=V DS parameter: I D parameter: I D 2.5 2.5 2 2 200 µA 1.5 -280 µA V GS(th) [V] -V GS(th) [V] 40 µA -70 µA 1 1.5 1 0.5 0.5 0 0 -60 -20 20 60 100 -60 140 -20 20 60 100 140 T j [°C] T j [°C] 19 Typ. capacitances (P) 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss Ciss 103 C [pF] C [pF] Coss Crss 103 Coss Crss 102 102 0 10 20 30 -V DS [V] 1.0 0 10 20 30 V DS [V] page 9 2008-07-08 BTS7904S I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 103 103 102 102 150 °C I F [A] 22 Forward characteristics of reverse diode (N) -I F [A] 21 Forward characteristics of reverse diode (P) 25 °C 150 °C 101 101 100 100 0 0.5 1 1.5 2 0 0.5 25 °C 1 -V SD [V] 1.5 V SD [V] 23 Avalanche characteristics (P) 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 Ω I AS=f(t AV); R GS=25 Ω parameter: T j(start) parameter: T j(start) 100 100 125 °C 100 °C I AV [A] -I AV [A] 25 °C 10 1 125 °C 10 100 °C 25 °C 1 1 10 100 1000 t AV [µs] 1.0 2 1 10 100 1000 t AV [µs] page 10 2008-07-08 BTS7904S 25 Typ. gate charge (P) 26 Typ. gate charge (N) V GS=f(Q gate); I D=-40 A pulsed V GS=f(Q gate); I D=40 A pulsed parameter: V DD parameter: V DD 12 12 10 -6 V 10 -24 V 44 V 8 8 V GS [V] -V GS [V] 11 V 6 6 4 4 2 2 0 0 0 20 40 60 80 100 0 20 40 -Q gate [nC] 60 80 100 Q gate [nC] 27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=-1 mA V BR(DSS)=f(T j); I D=1 mA 38 70 36 65 34 60 55 V BR(DSS) [V] -V BR(DSS) [V] 32 30 28 45 26 40 24 35 22 20 30 -60 -20 20 60 100 140 -60 T j [°C] 1.0 50 -20 20 60 100 140 T j [°C] page 11 2008-07-08 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. 1.0 page 12 2008-07-08 BTS7904S Revision History Version 1) Date Changes Current is limited by bondwire. With an RthJC(HS)=1.3K/W the HS chip is able to carry ID=-80A at 25°C. With an RthJC(LS)=1.8K/W the LS chip is able to carry ID=63A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design, not subject to production tests Qualified at -5V and +16V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1.0 page 13 2008-07-08