AP2900EC4 Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Ultra-small Package Outline ▼ Protection Diode Built-in BSSS RSS(ON) IS 24V 22.5mΩ 9A ▼ RoHS Compliant & Halogen-Free Description AP2900 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for the load switch, charge switch, battery switch for portable application. WLCSP 4 ball 1. 59mm + 0.02mm . G2 S2 G1 S1 G1 G2 0.65mm 1.59mm ± 0. 02mm 0.65mm S1 Top view Bottom view S2 0.3mm 0.225 mm 0.165mm Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Rating Units VSSS 24 V VGSS +12 V 9 A 60 A 1.6 W Parameter Symbol IS ISM Source Current 1 Pulsed Source Current 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Junction Temperature -55 to 150 ℃ Data and specifications subject to change without notice 1 201502241 AP2900EC4 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol V(BR)SSS RSS(ON) Parameter Test Conditions Min. Typ. VGS=0V, IS=1mA 24 - - V Static Source-Source On-Resistance VGS=4.5V, IS=3A 15 18.8 22.5 mΩ 15.5 19.5 23 mΩ VGS=3.7V, IS=3A 16 20 24 mΩ VGS=3.1V, IS=3A 17 21.5 26 mΩ VGS=2.5V, IS=3A 20 24 30 mΩ 0.5 - 1.3 V Source-Source Breakdown Voltage 2 VGS=4V, IS=3A Max. Units VGS(off) Cutoff Voltage VSS=10V, IS=1mA 丨yfs丨 Forward Transfer Admittance VSS=10V, IS=3A - 30 - S ISSS Zero Gate Voltage Source Current VSS=20V, VGS=0V - - 10 uA IGSS Gate-Source Leakage Current VGS=+8V, VSS=0V - - +30 uA td(on) Turn-on Delay Time VSS=10V - 2 - us tr Rise Time IS=3A - 4 - us td(off) Turn-off Delay Time VSS=4.5V - 18 - us tf Fall Time - 9 - us Qg Total Gate Charge - 18 - nC - - 1.2 V VF(S-S) VSS=10V, VGS=4.5V, IS=3A 2 Forward Source-Source Voltage . IS=3A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2900EC4 Test Circuits are Example of Measuring Channel-1 (unless otherwise specified) When Ch-1 is measured, Gate and Source of Ch-2 are shortcircuitd. S2 S2 G2 G2 A VSS G1 G1 S1 S1 A V GS TEST CIRCUIT : I SSS TEST CIRCUIT : I GSS . When Ch-1 is measured, Gate and Source of Ch-2 are shortcircuitd. S2 S2 G2 G2 A A G1 G1 S1 S1 VGS VGS TEST CIRCUIT : V GS(off) TEST CIRCUIT : 丨yfs丨 3 AP2900EC4 Test Circuits are Example of Measuring Channel-1 (unless otherwise specified) When Ch-1 is measured, +4.5V is added to VGS of Ch-2 S2 S2 G2 VGS=4.5V G2 IS IF V V G1 VGS=0V G1 S1 S1 VGS TEST CIRCUIT : RSS(ON) . When Ch-1 is measured, Gate and Source of Ch-2 are shortcircuitd. TEST CIRCUIT : VF(S-S) When Ch-1 is measured, Gate and Source of Ch-2 are shortcircuitd. S2 S2 RL G2 G2 V VSS G1 RG S1 TEST CIRCUIT : Switching Time VSS G1 S1 TEST CIRCUIT : Gate Charge 4 AP2900EC4 10 10 T A = 25 o C 6 4 2 6 4 2 0 0 0 0.4 0.8 1.2 1.6 2 0.0 1.0 2.0 3.0 4.0 V SS , Source-to-Source Voltage (V) V SS , Source-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 40 I S =3A I S =3A 50 40 . RSS(ON) (mΩ) T A =25 o C 60 RSS(ON) (mΩ) 4.5V 4.0V 3.5V 3.0V 2.5V V GS =2.0V 8 IS , Source Current (A) 8 IS , Source Current (A) o T A =150 C 4.5V 4.0V 3.5V 3.0V 2.5V V GS =2.0V 30 30 V GS =2.5V V GS =3.1V V GS =3.7V 20 V GS =4.0V V GS =4.5V 20 10 10 0 1 2 3 4 5 -100 -50 Fig 3. Static Source-to-Source On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Typ. Source-to-Source on State Resistance v.s. Junction Temperature 6 10 I S =3A V SS =10V VGS , Gate to Source Voltage (V) 5 IS, Source Current (A) 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C 1 T j = -55 o C 0.1 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 V F(S-S) , Source-to-Source Voltage (V) Fig 5. Forward Characteristic of 1.2 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) Fig 6. Gate Charge Characteristics Reverse Diode 5 AP2900EC4 10 V SS =10V IS , Source Current (A) 8 6 o T j =150 C 4 o T j =25 C T j =-55 o C 2 0 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 7. Transfer Characteristics . 6 AP2900EC4 MARKING INFORMATION Part Number 2900 YWWS Date Code (YWWS) Y：Last Digit Of The Year WW：Week S：Sequence . 7