Kexin BAS56 High-speed double diode Datasheet

Diodes
SMD Type
High-Speed Double Diode
BAS56
Unit: mm
Features
Small plastic SMD package
High switching speed: max. 6 ns
Continuous reverse voltage:max. 60 V
Repetitive peak reverse voltage:max. 60 V
Repetitive peak forward current:max. 600 mA.
Absolute Maximum Ratings Ta = 25
Parameter
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
Symbol
Test Condition
Min
60
VRRM
series connection
120
series connection
120
60
VR
IF
IFRM
Max
single diode loaded;
200
double diode loaded;
150
single diode loaded
600
double diode loaded
430
Unit
V
V
mA
mA
square wave; Tj = 25 prior to surge
non-repetitive peak forward current
IFSM
t=1
9
s
t = 100
t = 10 ms
total power dissipation
Ptot
storage temperature
Tstg
junction temperature
A
3
s
1.7
250
Tamb = 25
-65
mW
+150
Tj
150
thermal resistance from junction to tie-point
Rth j-tp
360
K/W
thermal resistance from junction to ambient
Rth j-a
500
K/W
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Diodes
SMD Type
BAS56
Electrical Characteristics Ta = 25
Symbol
Test Condition
Max
Unit
forward voltage
Parameter
VF
IF = 200 mA; DC value;
1.0
mV
reverse current
IR
VR = 60 V
100
nA
100
A
100
nA
VR =60 V;Tj = 150
Min
series connection
reverse current
IR
diode capacitance
Cd
reverse recovery time
trr
VR = 120 V
VR =120 V;Tj = 150
100
A
f = 1 MHz; VR = 0
2.5
pF
6
ns
when switched from IF = 400 mA;tr = 30 ns;
2.0
V
when switched from IF = 400 mA;tr = 100 ns;
1.5
V
when switched from IF = 400 mA to,IR = 400 mA;
RL = 100
forward recovery voltage
Marking
Marking
2
L51
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Vfr
; measured at IR = 40 mA
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