Cree® EZ1000™ Gen II LEDs Data Sheet CxxxEZ1000-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighting. FEATURES APPLICATIONS ● ● EZBright LED Technology » 380 mW min. – 450 nm » 360 mW min. – 460 nm » 110 mW min. – 527 nm General Illumination » Aircraft » Decorative Lighting ● Lambertian Radiation » Task Lighting ● Conductive Epoxy, Solder Paste or Preforms, or Flux » Outdoor Illumination Eutectic Attach ● Low Forward Voltage ● Dielectric Passivation across Epi Surface ● White LEDs ● LCD Backlighting ● Projection Displays ● Automotive CxxxEZ1000-Sxx000-2 Chip Diagram Die Cross Section Bottom View Top View .A CPR3EC Rev Data Sheet: EZBright LED 980 x 980 μm2 Dielectric Passivation Cathodes (-) 150 x 150 μm2 Gold Bond Pads (2) t = 170 μm Backside Metalization Subject to change without notice. www.cree.com Anode (+) 3 μm AuSn 1 Maximum Ratings at TA = 25°C Note 1, 2 & 3 CxxxEZ1000-Sxx000-2 DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1250 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +125°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ1000-Sxx000-2 2.9 3.2 3.8 2 20 C460EZ1000-Sxx000-2 2.9 3.2 3.8 2 21 C527EZ1000-Sxx000-2 3.0 3.4 4.0 2 35 Mechanical Specifications CxxxEZ1000-Sxx000-2 Description Dimensions Tolerance P-N Junction Area (μm) 950 x 950 ± 35 Chip Area (μm) 980 x 980 ± 35 170 ± 25 Chip Thickness (μm) Top Au Bond Pad (μm) - Qty. 2 Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) 150 x 150 ± 25 3.0 ± 1.5 980 x 980 ± 35 3.0 ± 1.5 Notes: 1. 2. 3. Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Forward Current (mA) 1200 1000 800 600 Rth j-a = 10 Rth j-a = 15 Rth j-a = 20 Rth j-a = 25 400 °C/W °C/W °C/W °C/W 200 0 25 50 75 100 125 150 175 Ambient Temperature (˚C) Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 2 CPR3EC Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Standard Bins for CxxxEZ1000-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ1000-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1000-0xxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ1000-S38000-2 C450EZ1000-0221-2 C450EZ1000-0222-2 C450EZ1000-0223-2 C450EZ1000-0224-2 C450EZ1000-0217-2 C450EZ1000-0218-2 C450EZ1000-0219-2 C450EZ1000-0220-2 C450EZ1000-0213-2 C450EZ1000-0214-2 C450EZ1000-0215-2 C450EZ1000-0216-2 C450EZ1000-0209-2 C450EZ1000-0210-2 C450EZ1000-0211-2 C450EZ1000-0212-2 C450EZ1000-0205-2 C450EZ1000-0206-2 C450EZ1000-0207-2 C450EZ1000-0208-2 Radiant Flux 460 mW 440 mW 420 mW 400 mW 380 mW 445 nm 447.5 nm 450 nm 452.5 nm 455 nm Dominant Wavelength C460EZ1000-S36000-2 C460EZ1000-0221-2 C460EZ1000-0222-2 C460EZ1000-0223-2 C460EZ1000-0224-2 C460EZ1000-0217-2 C460EZ1000-0218-2 C460EZ1000-0219-2 C460EZ1000-0220-2 C460EZ1000-0213-2 C460EZ1000-0214-2 C460EZ1000-0215-2 C460EZ1000-0216-2 C460EZ1000-0209-2 C460EZ1000-0210-2 C460EZ1000-0211-2 C460EZ1000-0212-2 C460EZ1000-0205-2 C460EZ1000-0206-2 C460EZ1000-0207-2 C460EZ1000-0208-2 C460EZ1000-0201-2 C460EZ1000-0202-2 C460EZ1000-0203-2 C460EZ1000-0204-2 Radiant Flux 460 mW 440 mW 420 mW 400 mW 380 mW 360 mW 455 nm 457.5 nm 460 nm 462.5 nm 465 nm Dominant Wavelength C527EZ1000-S11000-2 C527EZ1000-0213-2 C527EZ1000-0214-2 C527EZ1000-0215-2 C527EZ1000-0210-2 C527EZ1000-0211-2 C527EZ1000-0212-2 C527EZ1000-0207-2 C527EZ1000-0208-2 C527EZ1000-0209-2 C527EZ1000-0204-2 C527EZ1000-0205-2 C527EZ1000-0206-2 C527EZ1000-0201-2 C527EZ1000-0202-2 C527EZ1000-0203-2 Radiant Flux 190 mW 170 mW 150 mW 130 mW 110 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 3 CPR3EC Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Dominant Wavelength Characteristic Curves 3 2 1 0 -1 -2 25 50 75 100 125 150 Junction Temperature (°C) These are representative measurements for the EZBright 1000. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Intensity vs. Forward Current 300% Relative Intensity vs. Forward Current Relative Intensity vs. Junction Temperature 110% 105% 250% 200% Relative Light Intensity Relative Intensity Relative Intensity 300% 250% 200% 150% 150% 100% 100% 50% 50% 0% 0% 100% 95% 90% 85% 80% 75% 70% 0 250 500 750 1000 1250 0 250 500 If (mA) 750 1000 1250 65% 25 50 If (mA) Wavelength Shift vs. Forward Current 12 6 900 Dominant Wavelength Shift (nm) If (mA) 129 DW Shift (nm)(nm) DW Shift 96 63 30 -3 0 -6 -3 -9 -6 -12 -9 -12 0 250 500 750 1000 1250 0 250 500 If (mA) 750 1000 1250 100 125 150 Forward Current vs. Forward Voltage Wavelength Shift vs. Junction Temperature 1000 Wavelength Shift vs. Forward Current 75 Junction Temperature (°C) 800 5 700 4 600 3 500 2 400 300 1 200 0 100 -1 0 -2 0 1 2 25 50 75 3 Vf (V) 100 4 5 125 150 Junction Temperature (°C) If (mA) Forward Current vs. Forward Voltage 1000 0.100 900 110% 0.000 105% 800 Relative Light Shift Intensity Voltage (V) If (mA) 700 600 500 400 300 200 100 0 0 1 2 3 4 Vf (V) 5 Voltage Shift vs. Junction Temperature Relative Intensity vs. Junction Temperature -0.100 100% 95% -0.200 90% -0.300 85% -0.400 80% 75% -0.500 70% -0.600 65% 25 25 50 50 75 100 75 Temperature 100 (°C) Junction 125 125 150 150 Junction Temperature (°C) Voltage Shift vs. Junction Temperature 0.100 Shift (V) 0.000 © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Copyright Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. -0.100 4 CPR3EC Rev. A -0.200 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1000 and EZ are trademarks of Cree, Inc. 5 CPR3EC Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com