Vishay BZT52B5V6-V Small signal zener diode Datasheet

BZT52-V-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• These diodes are also available in other
e3
case styles and other configurations
including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
type designation AZ23 series and the dual zener
diode common cathode configuration in the SOT23 case with type designation DZ23 series.
• The Zener voltages are graded according to the
international E 24 standard.
17431
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
Ptot
5002)
mW
Power dissipation
Ptot
1)
mW
Zener current see table "
Characteristics "
1)
Diode on ceramic substrate 0.7 mm; 2.5 mm pad areas
2)
Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
410
2
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3001)
°C/W
Junction temperature
TJ
150
°C
Storage temperature range
TS
- 65 to + 150
°C
Thermal resistance junction to
ambient air
1)
Valid provided that electrodes are kept at ambient temperature
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
1
BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener Voltage
Dynamic Resistance
Range1)
VZ @ IZT1
rzj @ IZT1
rzj @ IZT2
Ω
V
Test
Current
Temp.
Coefficient
Reverse
Voltage
Admissible Zener
IZT1
@ IZT1
V R @ IR
=
100 nA,
IZ @
Tamb =
45 °C,
αVZ
V
mA
Current4)
IZ @
Tamb =
25 °C,
mA
(10-4/°C)
min
max
BZT52C2V4-V
W1
2.2
2.6
85
600
5
- 9 to - 4
-
-
-
BZT52C2V7-V
W2
2.5
2.9
75 (< 83)
< 500
5
- 9 to - 4
-
113
134
BZT52C3V0-V
W3
2.8
3.2
80 (< 95)
< 500
5
- 9 to - 3
-
98
118
BZT52C3V3-V
W4
3.1
3.5
80 (< 95)
< 500
5
- 8 to - 3
-
92
109
BZT52C3V6-V
W5
3.4
3.8
80 (< 95)
< 500
5
- 8 to - 3
-
85
100
BZT52C3V9-V
W6
3.7
4.1
80 (< 95)
< 500
5
- 7 to - 3
-
77
92
BZT52C4V3-V
W7
4
4.6
80 (< 95)
< 500
5
- 6 to - 1
-
71
84
BZT52C4V7-V
W8
4.4
5
70 (< 78)
< 500
5
- 5 to +2
-
64
76
BZT52C5V1-V
W9
4.8
5.4
30 (< 60)
< 480
5
- 3 to +4
> 0.8
56
67
BZT52C5V6-V
WA
5.2
6
10 (< 40)
< 400
5
- 2 to +6
>1
50
59
BZT52C6V2-V
WB
5.8
6.6
4.8 (< 10)
< 200
5
- 1 to +7
>2
45
54
BZT52C6V8-V
WC
6.4
7.2
4.5 (< 8)
< 150
5
+2 to +7
>3
41
49
BZT52C7V5-V
WD
7
7.9
4 (< 7)
< 50
5
+3 to +7
>5
37
44
BZT52C8V2-V
WE
7.7
8.7
4.5 (< 7)
< 50
5
+4 to +7
>6
34
40
BZT52C9V1-V
WF
8.5
9.6
4.8 (< 10)
< 50
5
+5 to +8
>7
30
36
BZT52C10-V
WG
9.4
10.6
5.2 (< 15)
< 70
5
+5 to +8
> 7.5
28
33
BZT52C11-V
WH
10.4
11.6
6 (< 20)
< 70
5
+5 to +9
> 8.5
25
30
BZT52C12-V
WI
11.4
12.7
7 (< 20)
< 90
5
+6 to +9
>9
23
28
BZT52C13-V
WK
12.4
14.1
9 (< 25)
< 110
5
+7 to +9
> 10
21
25
BZT52C15-V
WL
13.8
15.6
11 (< 30)
< 110
5
+7 to +9
> 11
19
23
BZT52C16-V
WM
15.3
17.1
13 (< 40)
< 170
5
+8 to +9.5
> 12
17
20
BZT52C18-V
WN
16.8
19.1
18 (< 50)
< 170
5
+8 to +9.5
> 14
15
18
BZT52C20-V
WO
18.8
21.2
20 (< 50)
< 220
5
+8 to +10
> 15
14
17
BZT52C22-V
WP
20.8
23.3
25 (< 55)
< 220
5
+8 to +10
> 17
13
16
BZT52C24-V
WR
22.8
25.6
28 (< 80)
< 220
5
+8 to +10
> 18
11
13
BZT52C27-V
WS
25.1
28.9
30 (< 80)
< 250
5
+8 to +10
> 20
10
12
BZT52C30-V
WT
28
32
35 (< 80)
< 250
5
+8 to +10
> 22.5
9
10
BZT52C33-V
WU
31
35
40 (< 80)
< 250
5
+8 to +10
> 25
8
9
BZT52C36-V
WW
34
38
40 (< 90)
< 250
5
+8 to +10
> 27
8
9
BZT52C39-V
WX
37
41
50 (< 90)
< 300
5
+10 to +12
> 29
7
8
BZT52C43-V
WY
40
46
60 (< 100)
< 700
5
+10 to +12
> 32
6
7
BZT52C47-V
WZ
44
50
70 (< 100)
< 750
5
+10 to +12
> 35
5
6
BZT52C51-V
X1
48
54
70 (< 100)
< 750
5
+10 to +12
> 38
5
6
BZT52C56-V
X2
52
60
< 135
BZT52C62-V
X3
58
66
BZT52C68-V
X4
64
72
< 200
BZT52C75-V
X5
70
79
< 250(2)
(3)
< 1000
2.5
typ. +10
(2)
-
-
-
< 150(2)
< 1000(3)
2.5
typ. +10(2)
-
-
-
(2)
(3)
< 1000
2.5
typ. +10
(2)
-
-
-
< 1500(3)
2.5
typ. +10(2)
-
-
-
(2)
IZT1 = 5 mA, IZT2 = 1 mA
(1)
Measured with pulses Tp = 5 ms
(2)
= IZT1 = 2.5 mA
(3)
= IZT2 = 0.5 mA
(4)
Valid provided that electrodes are kept at ambient temperature.
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2
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener Voltage
Dynamic Resistance
Range1)
VZ @ IZT1
rzj @ IZT1
rzj @ IZT2
Ω
V
Test
Current
Temp.
Coefficient
Reverse
Voltage
Admissible Zener
IZT1
@ IZT1
V R @ IR
=
100 nA,
IZ @
Tamb =
45 °C,
αVZ
V
mA
Current4)
IZ @
Tamb =
25 °C,
mA
(10-4/°C)
min
max
BZT52B2V4-V
W1
2.35
2.45
85
600
5
- 9 to - 4
-
-
-
BZT52B2V7-V
W2
2.65
2.75
75 (< 83)
< 500
5
- 9 to - 4
-
113
134
BZT52B3V0-V
W3
2.94
3.06
80 (< 95)
< 500
5
- 9 to - 3
-
98
118
BZT52B3V3-V
W4
3.23
3.37
80 (< 95)
< 500
5
- 8 to - 3
-
92
109
BZT52B3V6-V
W5
3.53
3.67
80 (< 95)
< 500
5
- 8 to - 3
-
85
100
BZT52B3V9-V
W6
3.82
3.98
80 (< 95)
< 500
5
- 7 to - 3
-
77
92
BZT52B4V3-V
W7
4.21
4.39
80 (< 95)
< 500
5
- 6 to - 1
-
71
84
BZT52B4V7-V
W8
4.61
4.79
70 (< 78)
< 500
5
- 5 to + 2
-
64
76
BZT52B5V1-V
W9
5
5.2
30 (< 60)
< 480
5
- 3 to + 4
> 0.8
56
67
BZT52B5V6-V
WA
5.49
5.71
10 (< 40)
< 400
5
- 2 to + 6
>1
50
59
BZT52B6V2-V
WB
6.08
6.32
4.8 (< 10)
< 200
5
- 1 to + 7
>2
45
54
BZT52B6V8-V
WC
6.66
6.94
4.5 (< 8)
< 150
5
+ 2 to + 7
>3
41
49
BZT52B7V5-V
WD
7.35
7.65
4 (< 7)
< 50
5
+ 3 to + 7
>5
37
44
BZT52B8V2-V
WE
8.04
8.36
4.5 (< 7)
< 50
5
+ 4 to + 7
>6
34
40
BZT52B9V1-V
WF
8.92
9.28
4.8 (< 10)
< 50
5
+ 5 to + 8
>7
30
36
BZT52B10-V
WG
9.8
10.2
5.2 (< 15)
< 70
5
+ 5 to + 8
> 7.5
28
33
BZT52B11-V
WH
10.8
11.2
6 (< 20)
< 70
5
+ 5 to + 9
> 8.5
25
30
BZT52B12-V
WI
11.8
12.2
7 (< 20)
< 90
5
+ 6 to + 9
>9
23
28
BZT52B13-V
WK
12.7
13.3
9 (< 25)
< 110
5
+ 7 to + 9
> 10
21
25
BZT52B15-V
WL
14.7
15.3
11 (< 30)
< 110
5
+ 7 to + 9
> 11
19
23
BZT52B16-V
WM
15.7
16.3
13 (< 40)
< 170
5
+ 8 to + 9.5
> 12
17
20
BZT52B18-V
WN
17.6
18.4
18 (< 50)
< 170
5
+ 8 to + 9.5
> 14
15
18
BZT52B20-V
WO
19.6
20.4
20 (< 50)
< 220
5
+ 8 to + 10
> 15
14
17
BZT52B22-V
WP
21.6
22.4
25 (< 55)
< 220
5
+ 8 to + 10
> 17
13
16
BZT52B24-V
WR
23.5
24.5
28 (< 80)
< 220
5
+ 8 to + 10
> 18
11
13
BZT52B27-V
WS
26.5
27.5
30 (< 80)
< 250
5
+ 8 to + 10
> 20
10
12
BZT52B30-V
WT
29.4
30.6
35 (< 80)
< 250
5
+ 8 to + 10
> 22.5
9
10
BZT52B33-V
WU
32.3
33.7
40 (< 80)
< 250
5
+ 8 to + 10
> 25
8
9
BZT52B36-V
WW
35.3
36.7
40 (< 90)
< 250
5
+ 8 to + 10
> 27
8
9
BZT52B39-V
WX
38.2
39.8
50 (< 90)
< 300
5
+ 10 to + 12
> 29
7
8
BZT52B43-V
WY
42.1
43.9
60 (< 100)
< 700
5
+ 10 to + 12
> 32
6
7
BZT52B47-V
WZ
46.1
47.9
70 (< 100)
< 750
5
+ 10 to + 12
> 35
5
6
BZT52B51-V
X1
50
52
70 (< 100)
< 750
5
+ 10 to + 12
> 38
5
6
BZT52B56-V
X2
54.9
57.1
< 135
BZT52B62-V
X3
60.8
63.2
BZT52B68-V
X4
66.6
69.4
< 200
BZT52B75-V
X5
73.5
76.5
< 250(2)
(3)
< 1000
2.5
(2)
typ. + 10
-
-
-
< 150(2)
< 1000(3)
2.5
typ. + 10(2)
-
-
-
(2)
(3)
< 1000
2.5
(2)
typ. + 10
-
-
-
< 1500(3)
2.5
typ. + 10(2)
-
-
-
(2)
IZT1 = 5 mA, IZT2 = 1 mA
1)
Measured with pulses Tp = 5 ms
2)
= IZT1 = 2.5 mA
3)
= IZT2 = 0.5 mA
4)
Valid provided that electrodes are kept at ambient temperature.
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
3
BZT52-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18117
18114
Figure 1. Forward characteristics
18888
Figure 4. Dynamic Resistance vs. Zener Current
18118
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
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4
18119
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
°C
, =
18135
18120
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C/W
18124
18121
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
°C
18122
18136
Figure 9. Dynamic Resistance vs. Zener Voltage
Document Number 85760
Rev. 1.5, 21-Apr-05
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
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5
BZT52-V-Series
Vishay Semiconductors
18158
Figure 13. Change of Zener Voltage vs. Junction Temperature
18159
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
18160
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
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6
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
18111
Figure 16. Breakdown Characteristics
18112
Figure 17. Breakdown Characteristics
Document Number 85760
Rev. 1.5, 21-Apr-05
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7
BZT52-V-Series
Vishay Semiconductors
18157
Figure 18. Breakdown Characteristics
Package Dimensions in mm (Inches)
1.35 (0.053) max.
0.25 (0.010) min.
0.1 (0.004) max.
0.55 (0.022)
0.15 (0.006) max.
Mounting Pad Layout
Cathode Band
2.40 (0.094)
2.55 (0.100)
2.85 (0.112)
3.55 (0.140)
3.85 (0.152)
ISO Method E
1.40 (0.055)
1.70 (0.067)
0.72 (0.028)
17432
1.40 (0.055)
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Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85760
Rev. 1.5, 21-Apr-05
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9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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