AOSMD AO4612 60v complementary enhancement mode field effect transistor Datasheet

AO4612
60V Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4612 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
n-channel
VDS (V) = 60V
ID = 4.5A (VGS=10V)
p-channel
-60V
-3.2A (VGS = -10V)
RDS(ON)
< 56mΩ (VGS=10V)
< 77mΩ (VGS=4.5V)
RDS(ON)
< 105mΩ (VGS = -10V)
< 135mΩ (VGS = -4.5V)
100% Rg tested
SOIC-8
Top View
D1
D2
Bottom View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
SOIC-8
n-channel
S1
p-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
VDS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
TA=70°C
ID
IDM
PD
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
A
t
≤
10s
Maximum Junction-to-Ambient
RθJA
Maximum Junction-to-Ambient A Steady-State
RθJL
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-60
±20
4.5
-3.2
3.6
-2.6
20
-20
Units
V
V
A
2
2
1.28
1.28
-55 to 150
-55 to 150
°C
Typ
48
74
35
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
W
AO4612
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
60
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
5
100
VGS=10V, ID=4.5A
2.1
46
Static Drain-Source On-Resistance
VGS=4.5V, ID=3A
64
gFS
Forward Transconductance
VDS=5V, ID=4.5A
11
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
56
79
0.74
450
VGS=0V, VDS=30V, f=1MHz
3
77
nA
V
mΩ
mΩ
S
1
V
3
A
540
pF
60
pF
25
VGS=0V, VDS=0V, f=1MHz
µA
A
RDS(ON)
TJ=125°C
Units
V
VDS=48V, VGS=0V
IDSS
Crss
Max
pF
Ω
1.65
2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8.5
10.5
nC
Qg(4.5V) Total Gate Charge
4.3
5.5
nC
VGS=10V, VDS=30V, ID=4.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.2
tD(on)
Turn-On DelayTime
4.7
7
ns
tr
Turn-On Rise Time
2.3
4.5
ns
tD(off)
Turn-Off DelayTime
15.7
24
ns
tf
Turn-Off Fall Time
1.9
4
ns
trr
Body Diode Reverse Recovery Time
27.5
35
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
ns
nC
VGS=10V, VDS=30V, RL=6.7Ω,
RGEN=3Ω
Ω
IF=4.5A, dI/dt=100A/µs
1.6
nC
nC
32
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating. Rev3: Oct 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
10V
VDS=5V
5.0V
15
125°C
ID(A)
ID (A)
10
4.5V
10
4.0V
5
5
25°C
VGS=3.5V
0
0
0
1
2
3
4
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
5
2
Normalized On-Resistance
90
80
RDS(ON) (mΩ
Ω)
3
VGS(Volts)
Figure 2: Transfer Characteristics
100
VGS=4.5V
70
60
50
VGS=10V
40
30
20
VGS=10V
ID=4.5A
1.8
1.6
VGS=4.5V
1.4
ID=3.0A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
140
1.0E+01
ID=4.5A
120
1.0E+00
125°C
1.0E-01
100
IS (A)
RDS(ON) (mΩ
Ω)
2.5
125°C
80
1.0E-02
25°C
1.0E-03
60
25°C
1.0E-04
40
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-05
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
800
VDS=30V
ID= 4.5A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
200
Crss
0
0
0
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
10µs
RDS(ON)
1ms
0.1
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10ms
0.1s
1s
10s
DC
30
Power (W)
ID (Amps)
30
40
1.0
20
10
0
0.0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4612
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
AO4612
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-60
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
On state drain current
VGS=-10V, VDS=-5V
-20
TJ=55°C
VGS=-10V, ID=-3.2A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=-5V, ID=-3.2A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=-4.5V, ID=-2.8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
-5
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-3.2A
Units
µA
±100
nA
-2.1
-3
V
84
105
A
145
106
135
9
-0.73
930
VGS=0V, VDS=-30V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Max
V
VDS=-48V, VGS=0V
IDSS
ID(ON)
Typ
mΩ
mΩ
S
-1
V
-3
A
1120
pF
85
pF
35
pF
7.2
9
Ω
16
20
nC
8
10
nC
2.5
nC
Qgd
Gate Drain Charge
3.2
tD(on)
Turn-On DelayTime
8
12
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-3.2A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs
32
Body Diode Reverse Recovery Time
VGS=-10V, VDS=-30V, RL=9.4Ω,
RGEN=3Ω
nC
3.8
7.5
ns
31.5
48
ns
7.5
15
ns
27
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
The value
value
in any
in aany
given
a given
application
application
depends
depends
on the
onuser's
the user's
specific
specific
board
board
design.
design.
The current
The current
rating
rating
is based
is based
on the
ont the
≤ 10s
t ≤ thermal
10s thermal
resistance rating.
resistance
B:
Repetitive
rating.
rating, pulse width limited by junction temperature.
B: Repetitive
pulse
width
limitedimpedence
by junctionfrom
temperature.
C.
The R θJA israting,
the sum
of the
thermal
junction to lead R θJL and lead to ambient.
C. The static
R θJA ischaracteristics
the sum of theinthermal
from
lead R
lead duty
to ambient.
D.
Figuresimpedence
1 to 6,12,14
arejunction
obtainedtousing
80θJL
µsand
pulses,
cycle 0.5% max.
D. These
The static
characteristics
Figures
1 to 6,12,14
are on
obtained
usingboard
80 µswith
pulses,
cyclein0.5%
E.
tests
are performedinwith
the device
mounted
1 in 2 FR-4
2oz.duty
Copper,
a stillmax.
air environment with T A=25°C. The SOA
E.
These
tests are
performed
with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
curve
provides
a single
pulse rating.
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
20
-10V
-4.5V
VDS=-5V
25
15
20
-ID(A)
-ID (A)
-4.0V
10
-3.5V
15
10
5
125°C
VGS=-3.0V
5
25°C
0
0
0
1
2
3
4
5
1
1.5
-VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
2
120
RDS(ON) (mΩ
Ω)
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
130
VGS=-4.5V
110
100
90
VGS=-10V
80
ID=-3.2A
1.8
VGS=-10V
1.6
1.4
VGS=-4.5V
ID=-2.8A
1.2
1
0.8
70
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
180
1.0E+00
ID=-3.2A
125°C
160
1.0E-01
125°C
140
1.0E-02
-IS (A)
RDS(ON) (mΩ
Ω)
2
120
1.0E-03
100
1.0E-04
80
25°C
60
2
3
4
5
25°C
1.0E-05
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-06
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
1400
10
1200
-VGS (Volts)
Capacitance (pF)
VDS=-30V
ID=-3.2A
8
6
4
Ciss
1000
800
600
400
Coss
2
Crss
200
0
0
0
4
8
12
16
20
0
100.0
30
40
50
60
TJ(Max)=150°C
TA=25°C
30
RDS(ON)
limited
100µs
1.0
1ms
0.1
10s
TJ(Max)=150°C
TA=25°C
0.0
0.1
DC
10ms
0.1s
1s
Power (W)
-ID (Amps)
20
40
10.0
20
10
0
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01 Pulse Width
0.1(s)
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4612
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
t d(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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