FDD6670AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching Applications • High performance trench technology for extremely • DC/DC converter low RDS(ON) • Motor Drives D D G S D-PAK TO-252 (TO-252) I-PAK (TO-251AA) G D S Absolute Maximum Ratings Symbo l G S TA=25oC unless otherwise noted Parameter Ratings Units V VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous – Pulsed PD Power Dissipation for Single Operation (Note 3) 84 (Note 1a) 100 (Note 1) 83 (Note 1a) 3.8 W 1.6 (Note 1b) TJ, TSTG A Operating and Storage Junction Temperature Range –55 to +175 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 1.8 (Note 1a) 40 (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6670AL FDD6670AL D-PAK (TO-252) 13’’ 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDD6670AL Rev C (W) FDD6670AL May 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID = 21A 370 mJ 21 A Off Characteristics BVDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics ID = 250 µA, Referenced to 25°C VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C Static Drain–Source On–Resistance VGS = 10 V, ID = 18 A ID = 16.5 A VGS = 4.5 V, VGS = 10 V, ID = 18 A, TJ=125°C ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 18 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, ∆VGS(th) ∆TJ RDS(on) mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VGS(th) 24 1 1.8 –5 3 4 5 6 5 6 10 V mV/°C 50 mΩ A 88 S 3845 pF 930 pF 368 pF Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VGS = 15 mV, f = 1.0 MHz 1.2 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 15 27 ns 13 23 ns 62 99 ns 36 58 ns 37 56 nC (Note 2) VDS = 15V, VGS = 5 V ID = 18 A, 10 nC 14 nC FDD6670AL Rev C (W) FDD6670AL Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.2 A (Note 2) 0.7 IF = 18 A ,diF/dt = 100 A/µs 1.2 V 39 nS 31 nC Notes:8 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6670AL Rev C (W) FDD6670AL Electrical Characteristics (continued) FDD6670AL Typical Characteristics 1.8 VGS = 10V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 100 4.5V 80 3.5V 60 40 3.0V 20 VGS = 3.5V 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 0.8 0 0 0.5 1 1.5 2 0 2.5 20 40 Figure 1. On-Region Characteristics. 100 0.012 ID =18A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 ID = 9 A 0.01 0.008 TA = 125oC 0.006 TA = 25oC 0.004 0.002 0.6 -50 -25 0 25 50 75 100 125 150 2 175 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 80 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 60 40 TA = 125oC 20 25oC -55oC 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 3.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6670AL Rev C (W) FDD6670AL Typical Characteristics 10 VDS = 10V VGS, GATE-SOURCE VOLTAGE (V) ID =18A 5000 15V f = 1MHz VGS = 0 V 20V 4000 CAPACITANCE (pF) 8 6 4 CISS 3000 2000 COSS 2 1000 0 0 CRSS 0 20 40 60 0 80 5 Figure 7. Gate Charge Characteristics 20 25 P(pk), PEAK TRANSIENT POWER (W) 100 100µs 100 RDS(ON) LIMIT 1ms 10ms 10 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 DC TC = 25oC 0.01 0.01 0.1 1 30 10 SINGLE PULSE RθJA = 96°C/W TC = 25°C 80 60 40 20 0 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics 1000 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJAt) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 0.01 0.001 0.0001 0.0001 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6670AL Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11