AUTOMOTIVE GRADE Features Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF7303Q S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Package Type AUIRF7303Q SO-8 30V RDS(on) max. ID Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number VDSS 0.05 5.3A SO-8 AUIRF7303Q G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7303QTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.3 ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 4.4 44 2.4 VGS EAS EAS (Tested) dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy (Thermally Limited) Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Symbol RJA Parameter Junction-to-Ambient Max. Units A W 0.02 ± 20 414 1160 1.6 -55 to + 175 W/°C V mJ V/ns °C Typ. Max. Units ––– 62.5 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7303Q Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 30 ––– ––– ––– 1.0 5.6 ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.03 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.05 VGS = 10V, ID = 2.7A m ––– 0.08 VGS = 4.5V, ID = 2.1A ––– 3.0 V VDS = VGS, ID = 100µA ––– ––– S VDS = 15V, ID = 2.7A ––– 1.0 VDS = 24V, VGS = 0V µA ––– 25 VDS = 24V,VGS = 0V,TJ = 125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 1.5 4.4 2.9 6.2 15 7.8 515 217 90 21 2.3 6.6 ––– ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 3.0 ––– ––– 44 ––– ––– ––– ––– 26 50 1.0 39 75 ID = 2.7A nC VDS = 15V VGS = 10V VDD = 15V ID = 2.7A ns RG = 6.8 VGS = 10V VGS = 0V pF VDS = 25V ƒ = 1.0MHz Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 2.7A,VGS = 0V ns TJ = 25°C ,IF = 2.7A, nC di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, Starting TJ = 25°C, L = 118mH, RG = 50, IAS = 2.7A VGS =10V. Part not recommended for use above this value. ISD 2.7A, di/dt 389A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. This value determined from sample failure population, TJ = 25°C, L = 118mH, RG = 50, IAS = 2.7A, VGS =10V. Surface mounted on FR-4 board, t 10sec. 2 2015-9-30 AUIRF7303Q 100 100 10 BOTTOM 1 2.5V 0.1 0.1 1 10 10 BOTTOM 2.5V 1 60µs PULSE WIDTH Tj = 175°C 60µs PULSE WIDTH Tj = 25°C 0.01 0.1 0.1 100 100 2.0 V DS = 15V 60µs PULSE WIDTH 10 T J = 175°C T J = 25°C 1 ID = 5.3A V GS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 100 ID, Drain-to-Source Current (A) 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 1.0 0.5 0.1 1 2 3 4 5 6 -60 7 60 100 140 180 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID = 2.7A C oss = C ds + C gd 1000 C iss C oss C rss 100 20 Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 10000 -20 T J , Junction Temperature (°C) V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 12.0 VDS = 24V VDS = 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 10 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 15V 10V 7.0V 4.5V 3.5V 3.0V 2.8V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 4.5V 3.5V 3.0V 2.8V 2.5V 0 5 10 15 20 Q G, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-9-30 AUIRF7303Q 100 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 175°C 10 T J = 25°C 1 100 100µs 1ms 10 10ms 1 DC 0.1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0.10 1 VSD , Source-to-Drain Voltage (V) 10 Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1800 EAS , Single Pulse Avalanche Energy (mJ) 6 ID 0.9A 1.4A BOTTOM 2.7A 1600 5 ID, Drain Current (A) 100 VDS, Drain-to-Source Voltage (V) TOP 1400 1200 4 1000 3 2 1 800 600 400 200 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) T A , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Maximum Avalanche Energy vs. Drain Current 100 Thermal Response ( Z thJA ) °C/W D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 2015-9-30 AUIRF7303Q ® Fig 12. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS 20V tp A I AS 0.01 Fig 13a. Unclamped Inductive Test Circuit Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms Fig 14a. Switching Time Test Circuit Id Vds Vgs L DUT 0 1K VCC Vgs(th) Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit 5 Qgd Qgodr Fig 15b. Gate Charge Waveform 2015-9-30 AUIRF7303Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 6 2015-9-30 AUIRF7303Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 7 2015-9-30 AUIRF7303Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M2 (+/- 150V)† AEC-Q101-002 Class H1A (+/- 500V)† AEC-Q101-001 Class C5 (+/- 1500V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 3/4/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 8 2015-9-30