AOSMD AOP605 Complementary enhancement mode field effect transistor Datasheet

AOP605
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)
The AOP605/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
AOP605 and AOP605L are electrically identical.
-RoHS Compliant
-AOP605L is Halogen Free
RDS(ON)
< 28mΩ
< 35mΩ (VGS = -10V)
(VGS = 10V)
< 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V)
Top View
PDIP8
Bottom View
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
PDIP-8
p-channel
n-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
±20
±20
7.5
-6.6
ID
6
-5.3
IDM
30
-30
2.5
2.5
1.6
1.6
-55 to 150
-55 to 150
PD
TA=70°C
Max p-channel
-30
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Units
V
V
A
W
°C
Typ
40
67
33
Max
50
80
40
Units
°C/W
°C/W
°C/W
Typ
38
66
30
Max
50
80
40
Units
°C/W
°C/W
°C/W
AOP605
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Min
Conditions
ID=250µA, VGS=0V
1
TJ=55°C
5
VDS=0V, VGS=±20V
100
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
VGS=10V, ID=7.5A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=7.5A
VSD
Body Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-DiodeContinuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
12
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=7.5A
µA
nA
3
V
A
22.6
28
33
43
mΩ
mΩ
16
0.76
680
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
1.8
TJ=125°C
VGS=4.5V, ID=6.0A
Output Capacitance.
Units
V
VDS=24V, VGS=0V
RDS(ON)
Max
30
VGS(th)
Coss
Typ
S
1
V
4
A
820
pF
102
pF
77
pF
1.2
2
Ω
13.84
16.6
nC
6.74
8.1
nC
1.82
nC
3.2
nC
4.6
ns
VGS=10V, VDS=15V, RL=2.0Ω,
RGEN=6Ω
4.1
ns
20.6
ns
Body Diode Reverse Recovery time
IF=7.5A, dI/dt=100A/µs
16.5
Body Diode Reverse Recovery charge
IF=7.5A, dI/dt=100A/µs
7.8
5.2
ns
20
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
20
10V
25
6V
5V
4.5V
VDS=5V
16
4V
12
ID(A)
ID (A)
20
15
3.5V
8
10
125°C
4
VGS=3V
5
25°C
0
0
0
1
2
3
4
0
5
0.5
2
2.5
3
3.5
4
4.5
1.7
Normalized On-Resistance
60
50
RDS(ON) (mΩ )
1.5
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
40
30
20
VGS=10V
1.6
VGS=10V
ID=7.5A
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
10
0
5
10
15
0.8
20
0
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
70
1.0E+01
60
1.0E+00
ID=7.5A
50
IS Amps
RDS(ON) (mΩ )
1
125°C
40
1.0E-01
125°C
1.0E-02
1.0E-03
30
25°C
25°C
1.0E-04
20
1.0E-05
10
0.0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
10
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
1000
10
VDS=15V
ID=7.5A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
Coss
200
100
0
Crss
0
0
2
4
6
8
10
12
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
100µs
ID (Amps)
1ms
20
25
30
TJ(Max)=150°C
TA=25°C
30
10µs
10ms
0.1s
1
15
40
Power W
RDS(ON)
limited
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
10
5
1s
20
10
10s
DC
0
0.1
0.1
1
10
0.001
100
VDS (Volts)
Zθ JA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000
AOP605
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
V dd
-
Rg
V gs
10%
Vgs
t d(o n)
tr
t d(off)
t on
tf
t off
D iode R ecovery T e st C ircuit & W ave form s
Q rr = -
V ds +
Idt
DUT
V gs
Vds Isd
V gs
Ig
Alpha Omega Semiconductor, Ltd.
L
Isd
+
VD C
-
IF
t rr
dI/d t
I RM
V dd
V dd
V ds
AOP605
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
On state drain current
VGS=-10V, VDS=-5V
30
TJ=55°C
VGS=-10V, ID=-6.6A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-5A
gFS
Forward Transconductance
VDS=-5V, ID=-6.6A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
-1
Zero Gate Voltage Drain Current
RDS(ON)
Max
V
VDS=-24V, VGS=0V
IDSS
ID(ON)
Typ
±100
nA
-2
-2.4
V
28
35
37
45
44
58
mΩ
-1
V
-4.2
A
A
mΩ
13
-0.76
920
VGS=0V, VDS=-15V, f=1MHz
µA
-5
S
1100
190
pF
pF
122
pF
3.6
4.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
18.5
22.2
nC
Qg(4.5V) Total Gate Charge (4.5V)
9.6
11.6
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-6.6A
nC
2.7
nC
Gate Drain Charge
4.5
nC
Turn-On DelayTime
7.7
ns
5.7
ns
20.2
ns
VGS=-10V, VDS=-15V, RL=2.3Ω,
RGEN=3Ω
9.5
trr
Body Diode Reverse Recovery Time
IF=-6.6A, dI/dt=100A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs
8.8
ns
24
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any agiven
givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thet t ≤≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
ns
nC
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
30
-10V
25
-4.5V
-6V
-5V
20
20
-4V
-ID(A)
-ID (A)
VDS=-5V
25
15
-3.5V
10
15
10
5
125°C
5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
0.5
60
1.5
2
2.5
3
3.5
4
4.5
5
1.60
ID=-6.6A
55
Normalized On-Resistance
VGS=-4.5V
50
45
RDS(ON) (mΩ )
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
40
35
VGS=-10V
30
25
20
1.40
VGS=-10V
VGS=-4.5V
1.20
1.00
15
10
0
5
10
15
20
25
0.80
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
70
1.0E+01
65
1.0E+00
ID=-6.6A
55
1.0E-01
50
1.0E-02
125°C
-IS (A)
RDS(ON) (mΩ )
60
125°C
45
40
1.0E-03
1.0E-04
35
30
25°C
25°C
1.0E-05
25
1.0E-06
20
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOP605
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
1500
10
VDS=-15V
ID=-6.6A
1250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
750
500
Coss
0
0
0
4
8
12
16
20
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
TJ(Max)=150°C
TA=25°C
10µs
100µs
0.1s
30
Power (W)
RDS(ON)
limited
1ms
10ms
1.0
15
40
TJ(Max)=150°C, TA=25°C
10.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
-ID (Amps)
Crss
250
1s
20
10
10s
DC
0
0.1
0.1
1
10
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
100
1000
AOP605
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgs
Vds
+
VDC
Qgd
+
DUT
Vgs
Ig
Charge
R e sistive S w itch in g T e st C ircuit & W a ve fo rm s
RL
V ds
t o ff
t on
V gs
-
DUT
V gs
V DC
td(on )
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D io d e R e c o v e ry T e s t C irc u it & W a v e fo rm s
Q rr = -
Vds +
DUT
V ds -
Is d
Id t
V gs
L
V gs
Ig
Alpha Omega Semiconductor, Ltd.
-Is d
+
VD C
-
-I F
t rr
d I/d t
-I R M
Vdd
Vdd
-V d s
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