AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS (V) = 30V -30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is Halogen Free RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) (VGS = 10V) < 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V) Top View PDIP8 Bottom View D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 PDIP-8 p-channel n-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. ±20 ±20 7.5 -6.6 ID 6 -5.3 IDM 30 -30 2.5 2.5 1.6 1.6 -55 to 150 -55 to 150 PD TA=70°C Max p-channel -30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Units V V A W °C Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Typ 38 66 30 Max 50 80 40 Units °C/W °C/W °C/W AOP605 n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Min Conditions ID=250µA, VGS=0V 1 TJ=55°C 5 VDS=0V, VGS=±20V 100 Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7.5A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=7.5A VSD Body Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-DiodeContinuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr 12 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=7.5A µA nA 3 V A 22.6 28 33 43 mΩ mΩ 16 0.76 680 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg 1.8 TJ=125°C VGS=4.5V, ID=6.0A Output Capacitance. Units V VDS=24V, VGS=0V RDS(ON) Max 30 VGS(th) Coss Typ S 1 V 4 A 820 pF 102 pF 77 pF 1.2 2 Ω 13.84 16.6 nC 6.74 8.1 nC 1.82 nC 3.2 nC 4.6 ns VGS=10V, VDS=15V, RL=2.0Ω, RGEN=6Ω 4.1 ns 20.6 ns Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs 16.5 Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs 7.8 5.2 ns 20 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 20 10V 25 6V 5V 4.5V VDS=5V 16 4V 12 ID(A) ID (A) 20 15 3.5V 8 10 125°C 4 VGS=3V 5 25°C 0 0 0 1 2 3 4 0 5 0.5 2 2.5 3 3.5 4 4.5 1.7 Normalized On-Resistance 60 50 RDS(ON) (mΩ ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 1.6 VGS=10V ID=7.5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 10 0 5 10 15 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=7.5A 50 IS Amps RDS(ON) (mΩ ) 1 125°C 40 1.0E-01 125°C 1.0E-02 1.0E-03 30 25°C 25°C 1.0E-04 20 1.0E-05 10 0.0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 10 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 VDS=15V ID=7.5A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 Coss 200 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 100µs ID (Amps) 1ms 20 25 30 TJ(Max)=150°C TA=25°C 30 10µs 10ms 0.1s 1 15 40 Power W RDS(ON) limited 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 10 5 1s 20 10 10s DC 0 0.1 0.1 1 10 0.001 100 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 100 1000 AOP605 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s RL Vds Vds DUT Vgs + VDC 90% V dd - Rg V gs 10% Vgs t d(o n) tr t d(off) t on tf t off D iode R ecovery T e st C ircuit & W ave form s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Alpha Omega Semiconductor, Ltd. L Isd + VD C - IF t rr dI/d t I RM V dd V dd V ds AOP605 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 On state drain current VGS=-10V, VDS=-5V 30 TJ=55°C VGS=-10V, ID=-6.6A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5A gFS Forward Transconductance VDS=-5V, ID=-6.6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units -1 Zero Gate Voltage Drain Current RDS(ON) Max V VDS=-24V, VGS=0V IDSS ID(ON) Typ ±100 nA -2 -2.4 V 28 35 37 45 44 58 mΩ -1 V -4.2 A A mΩ 13 -0.76 920 VGS=0V, VDS=-15V, f=1MHz µA -5 S 1100 190 pF pF 122 pF 3.6 4.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 18.5 22.2 nC Qg(4.5V) Total Gate Charge (4.5V) 9.6 11.6 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6.6A nC 2.7 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 7.7 ns 5.7 ns 20.2 ns VGS=-10V, VDS=-15V, RL=2.3Ω, RGEN=3Ω 9.5 trr Body Diode Reverse Recovery Time IF=-6.6A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs 8.8 ns 24 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet t ≤≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. ns nC AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 -10V 25 -4.5V -6V -5V 20 20 -4V -ID(A) -ID (A) VDS=-5V 25 15 -3.5V 10 15 10 5 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.60 ID=-6.6A 55 Normalized On-Resistance VGS=-4.5V 50 45 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 1.40 VGS=-10V VGS=-4.5V 1.20 1.00 15 10 0 5 10 15 20 25 0.80 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 65 1.0E+00 ID=-6.6A 55 1.0E-01 50 1.0E-02 125°C -IS (A) RDS(ON) (mΩ ) 60 125°C 45 40 1.0E-03 1.0E-04 35 30 25°C 25°C 1.0E-05 25 1.0E-06 20 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1500 10 VDS=-15V ID=-6.6A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss 0 0 0 4 8 12 16 20 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 TJ(Max)=150°C TA=25°C 10µs 100µs 0.1s 30 Power (W) RDS(ON) limited 1ms 10ms 1.0 15 40 TJ(Max)=150°C, TA=25°C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1s 20 10 10s DC 0 0.1 0.1 1 10 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 100 1000 AOP605 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgs Vds + VDC Qgd + DUT Vgs Ig Charge R e sistive S w itch in g T e st C ircuit & W a ve fo rm s RL V ds t o ff t on V gs - DUT V gs V DC td(on ) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D io d e R e c o v e ry T e s t C irc u it & W a v e fo rm s Q rr = - Vds + DUT V ds - Is d Id t V gs L V gs Ig Alpha Omega Semiconductor, Ltd. -Is d + VD C - -I F t rr d I/d t -I R M Vdd Vdd -V d s