DMP6050SSD 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Low Input Capacitance 55mΩ @ VGS = -10V ID TC = +25°C -11.3A Fast Switching Speed 70mΩ @ VGS = -4.5V -9.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) V(BR)DSS RDS(on) max -60V PRODUCT NEW PRODUCT NEW Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Backlighting Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (Approximate) SO-8 D1 SO-8 Pin1 S1 D1 G1 D1 S2 D2 G2 D2 G2 S1 Top View Pin Configuration Top View G1 D2 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMP6050SSD-13 Notes: Case SO-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking P6050SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) P 6050SD YY WW 1 DMP6050SSD Document number: DS37454 Rev.1 - 2 4 1 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C TA = +25°C TA = +70°C PRODUCT NEW PRODUCT NEW Continuous Drain Current (Note 6) VGS = -10V Value -60 ±20 -11.3 -9.1 ID A -4.8 -3.9 -32 -2.8 -24.8 30.8 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady state t<10s TA = +25°C Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) PD Operating and Storage Temperature Range Electrical Characteristics Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Notes: W TJ, TSTG -55 to +150 °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Body Diode Reverse Recovery Charge RθJC 1.1 72 37 13 RθJA Thermal Resistance, Junction to Case (Note 6) Units 0.9 104 45 1.7 RJA TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 1.2 Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) mΩ VSD - -3.0 55 70 -1.2 V - — 36 47 -0.7 VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr — 1293 86.3 64.7 12 11.9 24 3.6 5.7 4.3 6.3 46.7 25.3 13.6 — pF pF pF Ω nC nC nC nC ns ns ns ns ns Qrr — 7.4 — nC V Test Condition VDS = -30V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs IF = -5A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP6050SSD Document number: DS37454 Rev.1 - 2 2 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SSD 30 30 VGS = -4.5V VGS = -5.0V VDS = 5.0V 25 15 VGS = -3.5V 10 20 15 TA = 150°C TA = 125°C 10 TA = 85°C T A = 25°C VGS = -3.0V 0.5 1 1.5 2 2.5 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic T A = -55°C 0 0 3 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.3 0.090 0.080 0.070 VGS = -4.5V 0.060 0.050 VGS = -10V 0.040 0.030 0.020 0.010 0 5 10 15 20 25 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0.100 0.000 TA = 175°C 5 VGS = -2.8V 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) VGS = -4.0V 20 0.25 I D = -7A 0.2 0.15 0.1 0.12 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.4 VGS = 4.5V 2.2 T A = 175°C 0.1 T A = 150°C T A = 125°C 0.08 T A = 85°C 0.06 T A = 25°C 0.04 T A = -55°C 0.02 0 0 I D = -5A 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALI ZED) ID, DRAIN CURRENT (A) VGS = -10V 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) PRODUCT NEW PRODUCT NEW 25 2 VGS = -10V 1.8 I D = -10A 1.6 VGS = -4.5V 1.4 I D = -5A 1.2 1 0.8 0.6 5 10 15 20 25 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP6050SSD Document number: DS37454 Rev.1 - 2 30 3 of 6 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature October 2014 © Diodes Incorporated VGS(th ), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 3 0.1 0.09 0.08 0.07 0.06 VGS = -4.5V I D = -5A 0.05 VGS = -10V I D = -10A 0.04 0.03 0.02 0.01 0 -50 2.5 I D = -1mA 2 ID = -250µA 1.5 1 0.5 0 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 30 -25 10000 f = 1MHz IS, SOURCE CURRENT (A) CT , JUNCTION CAPACITANCE (pF) TA = 175°C 25 T A = 150°C 20 T A = 125°C 15 T A = 85°C 10 T A = 25°C 5 0 0 T A = -55°C 0.3 0.6 0.9 C iss 1000 Coss 100 C rss 10 1.2 1.5 0 5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 10 15 20 25 30 35 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(on) Limited 8 VDS = -30V ID , DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) PRODUCT NEW PRODUCT NEW DMP6050SSD I D = -5A 6 4 2 0 0 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ (m ax ) = 150°C TA = 25°C V GS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMP6050SSD Document number: DS37454 Rev.1 - 2 25 0.1 4 of 6 www.diodes.com PW = 10ms PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 October 2014 © Diodes Incorporated DMP6050SSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Rthja = 104°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 PRODUCT NEW PRODUCT NEW 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMP6050SSD Document number: DS37454 Rev.1 - 2 5 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). PRODUCT NEW PRODUCT NEW Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMP6050SSD Document number: DS37454 Rev.1 - 2 6 of 6 www.diodes.com October 2014 © Diodes Incorporated