AP2309GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
-30V
RDS(ON)
75mΩ
ID
- 3.7A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and costeffectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
+20
V
- 3.7
A
-3
A
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
-12
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201411253
AP2309GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-3A
-
-
75
mΩ
VGS=-4.5V, ID=-2.6A
-
-
120
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=55 C) VDS=-24V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
Qg
Total Gate Charge
ID=-3A
-
5
8
nC
Qgs
Gate-Source Charge
VDS=-24V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=-10V
-
7
-
ns
Ciss
Input Capacitance
.
V =0V
-
412
660
pF
Coss
Output Capacitance
VDS=-25V
-
91
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
62
-
pF
Min.
Typ.
o
GS
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2309GN-HF
45
45
-10V
40
T A =25 o C
-7.0V
30
25
-5.0V
-4.5V
20
15
10
-7.0V
30
25
-5.0V
-4.5V
20
15
10
V G = - 3 .0V
5
V G = - 3 .0V
5
0
0
0
2
4
6
8
10
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
1.6
I D =-2.6A
I D = -3A
V G = -10V
T A =25 o C
95
1.4
85
.
75
Normalized RDS(ON)
RDS(ON) (mΩ )
-10V
35
-ID , Drain Current (A)
-ID , Drain Current (A)
35
T A = 150 o C
40
1.2
1.0
0.8
65
0.6
55
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.3
Normalized VGS(th)
3
-IS(A)
2
T j =150 o C
T j =25 o C
1
0
1.1
0.9
0.7
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2309GN-HF
f=1.0MHz
1000
8
ID= -3A
V DS = -24V
C iss
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
100
C oss
4
C rss
2
0
10
0
2
4
6
8
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
-ID (A)
10
1ms
.
1
10ms
0.1
100ms
T A =25 o C
Single Pulse
1s
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
Charge
Q
Fig 12. Gate Charge Circuit
4
AP2309GN-HF
MARKING INFORMATION
Part Number : NB
NBSS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5