DCR1260Y DCR1260Y Phase Control Thyristor Target Information DS5498-1.2 February 2002 FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM IT(AV) (max) ITSM dV/dt dI/dt 6500V 1260A 20800A 1000V/µs 300A/µs APPLICATIONS ■ High Power Converters ■ DC Motor Control ■ High Voltage Power Supplies VOLTAGE RATINGS Part and Ordering Number DCR1260Y65 DCR1260Y64 DCR1260Y63 DCR1260Y62 DCR1260Y61 DCR1260Y60 Repetitive Peak Voltages VDRM and VDRM V 6500 6400 6300 6200 6100 6000 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: Y (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1260Y63 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/10 www.dynexsemi.com DCR1260Y CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Parameter Symbol Test Conditions Max. Units 1260 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1980 A Continuous (direct) on-state current - 1935 A 863 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1356 A Continuous (direct) on-state current - 1254 A Max. Units 1617 A IT Half wave resistive load Tcase = 80˚C unless stated otherwise. Parameter Symbol Test Conditions Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1598 A Continuous (direct) on-state current - 1543 A 690 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1084 A Continuous (direct) on-state current - 983 A IT Half wave resistive load 2/10 www.dynexsemi.com DCR1260Y SURGE RATINGS ITSM I2t ITSM I2t Test Conditions Parameter Symbol Surge (non-repetitive) on-state current Max. Units 16.7 kA 1.4 x 106 A2s 20.8 kA 2.18 x 106 A2s 10ms half sine, Tcase = 125˚C I2t for fusing VR = 50% VRRM - 1/4 sine Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125˚C I2t for fusing VR = 0 DYNAMIC CHARACTERISTICS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM, - 150 A/µs - 300 A/µs IRRM/IRRM Repetitive 50Hz Gate source 30V, 15Ω, Non-repetitive tr ≤ 0.5µs, Tj = 125˚C Threshold voltage At Tvj = 125˚C - 1.2 V rT On-state slope resistance At Tvj = 125˚C - 1.18 mΩ tgd Delay time VD = 67% VDRM, gate source 30V, 15Ω 0.5 1.5 µs 600 - µs VT(TO) tr = 0.5µs, Tj = 25˚C tq Turn-off time IT = 1000A, tp = 1ms, Tj =125˚C, VR = 100V, dIRR/dt = 10A/µs, VDR = 67% VDRM, dVDR/dt = 25V/µs linear IL Latching current Tj = 25˚C, VD = 10V - 600 mA IH Holding current Tj = 25˚C - 200 mA 3/10 www.dynexsemi.com DCR1260Y THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Test Conditions Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Min. Max. Units Double side cooled DC - 0.0095 ˚CW Single side cooled Anode DC - 0.019 ˚CW Cathode DC - 0.019 ˚CW Double side - 0.002 ˚CW (with mounting compound) Single side - 0.004 ˚CW On-state (conducting) - 135 ˚C Reverse (blocking) - 125 ˚C Clamping force 50kN Tstg Storage temperature range –55 125 ˚C Fm Clamping force 45.0 55.0 kN GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 300 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 4 150 W PG(AV) Mean gate power 5 W - - 4/10 www.dynexsemi.com DCR1260Y CURVES 2000 2500 Tj = 125˚C 1800 1600 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 2000 1500 1000 1400 1200 1000 800 600 400 500 dc 1/2 wave 3 phase 6 phase 200 0 1.5 2.0 2..5 3.0 3.5 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 4.0 0 0 100 200 300 400 500 600 700 800 900 1000 Mean on-state current, IT(AV) - (A) Fig.3 Power dissipation 5/10 www.dynexsemi.com DCR1260Y 10 Upper limit Lower limit 9 Gate trigger voltage, VGT - (V) 8 7 6 Preferred gate drive area Table gives pulse power PGM in Watts Pulse Width 5 Tj = -40˚C 4 Tj = 25˚C 3 Tj = 125˚C µs 100 200 500 1000 10000 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 1.0 7 8 9 10 Fig.4 Gate characteristics 25 Upper Limit Lower Limit 5W 10W 20W 50W 100W Gate trigger voltage, VGT - (V) 20 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) Fig.5 Gate characteristics 6/10 www.dynexsemi.com DCR1260Y 1000 Conditions: Tj = 125˚C IT = 900A VR = 100V Peak reverse recovery current, IRR - (A) Total stored charge, QRA3 - (µC) 10000 Max Min 1000 IT QRA3 100 0.1 1.0 10 Rate of decay of on-state current, dI/dt - (A/µs) Max Min 100 25% IRR IRR dI/dt Conditions: Tj = 125˚C IT = 900A VR = 100V 10 0.1 100 1.0 10 Rate of decay of on-state current, dI/dt - (A/µs) Fig.6 Stored charge 100 Fig.7 Reverse recovery current 0.1 50 2.5 45 0.001 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Peak half sine on-state current - (kA) Thermal impedance - (˚C/W) Double side cooled 35 I2t value - (A2s x 106) 0.01 2.0 40 Anode side cooled 1.5 30 25 1.0 20 15 ITSM (VR = 0) 10 0.5 ITSM (VR = 50% VRRM) Anode side 0.019 0.020 0.0207 0.0234 5 I2t (VR = 0) I2t (VR = 50% VRRM) 0 0.01 0.1 1 Time - (s) 10 Fig.8 Maximum (limit) transient thermal impedance junction to case (˚C/W) 100 0 1 2 3 4 5 6 7 8 9 Pulse length, half sine wave - (ms) 10 Fig.9 Sub-cycle surge currents 7/10 www.dynexsemi.com DCR1260Y 25 Surge current (VR = 0) Peak half sine wave on-state current - (kA) Surge current (VR = 50% VRRM) 20 15 10 5 0 0 10 20 30 40 Number of cycles @ 50Hz 50 60 Fig.8 Multi-cycle surge currents 8/10 www.dynexsemi.com DCR1260Y PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (One in each electrode) Cathode tab Cathode Ø112.5 max Ø73 nom 37.7 36.0 Ø1.5 Gate Ø73 nom Anode Nominal weight: 1600g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: Y 9/10 www.dynexsemi.com DCR1260Y POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5498-1 Issue No. 1.2 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com