PD - 97442
AUTOMOTIVE GRADE
Automotive DirectFET Power MOSFET
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
V(BR)DSS
RDS(on) typ.
SC
M2
40V
700µΩ
1000µΩ
270A
220nC
max.
ID (Silicon Limited)
Qg
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
AUIRF7739L2TR
AUIRF7739L2TR1
M4
L4
L6
L8
Description
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Max.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
f
e
f
g
c
c
h
40
± 20
270
190
46
375
1070
125
3.8
270
160
See Fig.12a, 12b, 15, 16
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
e
j
k
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
fl
f
Typ.
Max.
Units
–––
12.5
20
–––
–––
40
–––
–––
1.2
0.5
°C/W
0.83
W/°C
HEXFET® is a registered trademark of International Rectifier.
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1
01/05/10
AUIRF7739L2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
40
–––
–––
0.008
–––
–––
–––
2.0
–––
290
–––
–––
–––
–––
–––
700
2.8
-6.7
–––
1.5
–––
–––
–––
–––
1000
4.0
–––
–––
–––
20
250
100
-100
Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
µΩ VGS = 10V, ID = 160A
V
VDS = VGS, ID = 250µA
i
mV/°C
VDS = 50V, ID = 160A
S
Ω
µA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
46
19
81
74
100
83
21
71
56
42
11880
2510
1240
8610
2230
3040
330
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
VDS = 20V, VGS = 10V
ID = 160A
nC
See Fig. 11
nC
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
ID = 160A
RG = 1.8Ω
ns
i
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
g
Surface mounted on 1 in. square Cu
(still air).
Min.
–––
Typ.
–––
Max.
110
–––
–––
1070
–––
–––
–––
–––
87
250
1.3
130
380
Units
A
Mounted to a PCB with small
clip heatsink (still air)
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS = 160A, VGS = 0V
IF = 160A, VDD = 20V
di/dt = 100A/µs
i
i
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes through are on page 10
2
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AUIRF7739L2TR/TR1
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
DFET2
MSL1
Class B
AEC-Q101-002
ESD
Human Body Model
Class 2
AEC-Q101-001
Charged Device Model
Class IV
AEC-Q101-005
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
Yes
http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7739L2TR/TR1
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
BOTTOM
100
10
≤60µs PULSE WIDTH
1
Tj = 25°C
≤60µs PULSE WIDTH
Tj = 175°C
4.5V
4.5V
10
0.1
0.1
1
10
100
0.1
1000
1
ID = 160A
8
6
4
T J = 125°C
T J = 25°C
5.0
5.5
6.0
6.5
7.0
7.5
8.0
RDS (on) , Drain-to-Source On Resistance (m Ω)
RDS(on) , Drain-to -Source On Resistance (mΩ)
10
0
1000
0.93
VGS = 10V
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
0
40
80
120
160
200
ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 3. Typical On-Resistance vs. Gate Voltage
Fig 4. Typical On-Resistance vs. Drain Current
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
100
T J = 175°C
T J = 25°C
10
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
ID = 160A
VGS = 10V
1.5
1.0
0.5
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7739L2TR/TR1
1000
4.5
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
5.0
4.0
3.5
3.0
2.5
ID = 250µA
ID = 1.0mA
2.0
ID = 1.0A
1.5
TJ = 175°C
100
T J = 25°C
10
VGS = 0V
1.0
1.0
-75 -50 -25 0
0.0
25 50 75 100 125 150 175 200
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
100000
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
2.0
2.5
3.0
C oss = C ds + C gd
100
T J = 175°C
50
Ciss
10000
Coss
Crss
V DS = 10V
25
1.5
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
T J = 25°C
75
1.0
Fig 8. Typical Source-Drain Diode Forward Voltage
150
125
0.5
VSD, Source-to-Drain Voltage (V)
T J , Temperature ( °C )
20µs PULSE WIDTH
1000
0
0
25
50
75
100
125
1
150
10
100
VDS, Drain-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14.0
300
12.0
250
VDS= 32V
VDS= 20V
10.0
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
ID= 160A
8.0
6.0
4.0
200
150
100
50
2.0
0
0.0
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
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25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
5
AUIRF7739L2TR/TR1
1100
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
10000
1000
100µsec
100
1msec
DC
ID
29A
46A
BOTTOM 160A
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
TOP
900
800
700
600
500
400
300
200
100
0
0
1
10
100
25
VDS, Drain-to-Source Voltage (V)
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
τJ
0.0001
1E-006
1E-005
τJ
τ1
R2
R2
R3
R3
0.0001
Ri (°C/W)
R4
R4
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
τ4
τ4
τi (sec)
0.1080
0.000171
0.6140
0.053914
0.4520
0.006099
1.47e-05
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF7739L2TR/TR1
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cy cle
ID = 160A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 17. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
- VDD
IAS
VGS
20V
A
0.01Ω
tp
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
S
Vgs(th)
Qgodr
VGS
RG
RD
VDS
90%
D.U.T.
+
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
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Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
Fig 19a. Gate Charge Test Circuit
VDS
Qgd
VDD
10%
VGS
td(on)
tr
t d(off)
tf
Fig 20b. Switching Time Waveforms
7
AUIRF7739L2TR/TR1
Driver Gate Drive
D.U.T
+
-
-
RG
*
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
VDD
**
P.W.
Period
***
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
-
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
ISD
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Automotive DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
S
S
S
S
S
S
S
S
G
D
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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AUIRF7739L2TR/TR1
Automotive DirectFET Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Automotive DirectFET Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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9
AUIRF7739L2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
10
Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
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AUIRF7739L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to
make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
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express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not
responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in
other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation
where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application,
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requirements.
For technical support, please contact IR’s Technical Assistance Center
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Tel: (310) 252-7105
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11