Elantec EL2075CS 2ghz gbwp gain-of-10 stable operational amplifier Datasheet

2GHz GBWP Gain-of-10 Stable Operational Amplifier
Features
General Description
• 2GHz gain-bandwidth product
• Gain-of-10 stable
• Conventional voltage-feedback
topology
• Low offset voltage = 200µV
• Low bias current = 2µA
• Low offset current = 0.1µA
• Output current = 50mA over
temperature
• Fast settling = 13ns to 0.1%
The EL2075C is a precision voltage-feedback amplifier featuring a
2GHz gain-bandwidth product, fast settling time, excellent differential
gain and differential phase performance, and a minimum of 50mA output current drive over temperature.
Applications
•
•
•
•
•
•
•
•
Active filters/integrators
High-speed signal processing
ADC/DAC buffers
Pulse/RF amplifiers
Pin diode receivers
Log amplifiers
Photo multiplier amplifiers
High speed sample-and-holds
EL2075C
EL2075C
The EL2075C is gain-of-10 stable with a -3dB bandwidth of 400MHz
at AV = +10. It has a very low 200µV of input offset voltage, only 2µA
of input bias current, and a fully symmetrical differential input. Like
all voltage-feedback operational amplifiers, the EL2075C allows the
use of reactive or non-linear components in the feedback loop. This
combination of speed and versatility makes the EL2075C the ideal
choice for all op-amp applications at a gain of 10 or greater requiring
high speed and precision, including active filters, integrators, sampleand-holds, and log amps. The low distortion, high output current, and
fast settling makes the EL2075C an ideal amplifier for signal-processing and digitizing systems.
Ordering Information
Part No.
Temp. Range
Package
Outline #
EL2075CN
0°C to +75°C
8-Pin P-DIP
MDP0031
EL2075CS
0°C to +75°C
8-Lead SO
MDP0027
Connection Diagrams
DIP and SO Package
September 26, 2001
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
Absolute Maximum Ratings (T
A
= 25°C)
Supply Voltage (VS)
θJA = 175°C/W SO-8
Operating Temperature
0°C to +75°C
Junction Temperature
175°C
Storage Temperature
-60°C to +150°C
Note: See EL2071/EL2171 for Thermal Impedance curves.
±7V
Output Current Output is short-circuit protected to ground, however,
maximum reliability is obtained if IOUT does not exceed 70mA.
Common-Mode Input
Differential Input Voltage
Thermal Resistance
±VS
5V
θJA = 95°C/W P-DIP
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
Open Loop DC Electrical Characteristics
VS = ±5V, RL = 100Ω, unless otherwise specified
Parameter
VOS
Description
Input Offset Voltage
Test Conditions
VCM = 0V
Temp
Min
25°C
Typ
Max
0.2
1
mV
2.5
mV
TMIN, T MAX
Unit
TCVOS
Average Offset Voltage Drift
[1]
All
8
IB
Input Bias Current
VCM = 0V
All
2
6
µA
IOS
Input Offset Current
VCM = 0V
25°C
0.1
1
µA
2
µA
TMIN, T MAX
µV/°C
PSRR
Power Supply Rejection Ratio
[2]
All
70
90
CMRR
Common Mode Rejection Ratio
[3]
All
70
90
IS
Supply Current—Quiescent
No Load
RIN (diff)
RIN (Differential)
Open-Loop
25°C
15
CIN (diff)
CIN (Differential)
Open-Loop
25°C
1
pF
RIN (cm)
RIN (Common-Mode)
25°C
1
MΩ
CIN (cm)
CIN (Common-Mode)
25°C
1
pF
ROUT
Output Resistance
25°C
50
mΩ
CMIR
Common-Mode Input
Range
25°C
21
TMIN, T MAX
25°C
±3
TMIN, T MAX
±2.5
±3.5
dB
dB
25
mA
25
mA
kΩ
V
V
IOUT
Output Current
All
50
70
mA
VOUT
Output Voltage Swing
No Load
All
±3.5
±4
V
VOUT 100
Output Voltage Swing
100Ω
All
±3
±3.6
V
VOUT 50
Output Voltage Swing
50Ω
All
±2.5
±3.4
V
AVOL 100
Open-Loop Gain
100Ω
25°C
1000
2800
V/V
TMIN, T MAX
800
AVOL 50
Open-Loop Gain
50Ω
25°C
800
TMIN, T MAX
600
V/V
2300
V/V
V/V
eN@ > 1MHz
Noise Voltage 1–100MHz
25°C
2.3
nV/√Hz
iN@ > 100 kHz
Noise Current 100k–100MHz
25°C
3.2
pA/√Hz
1. Measured from T MIN, TMAX.
2. ±VCC = ±4.5V to 5.5V.
3. ±VIN = ±2.5V, V OUT = 0V
2
Closed Loop AC Electrical Characteristics
VS = ±5V, AV = +20, Rf = 1500Ω, RL = 100Ω unless otherwise specified.
Parameter
SSBW
Description
-3dB Bandwidth
(VOUT = 0.4VPP)
Test Conditions
AV = +10
Temp
Min
25°C
AV = +20
Typ
Max
400
25°C
150
TMIN, TMAX
125
Unit
MHz
200
MHz
MHz
AV = +50
25°C
40
GBWP
Gain-Bandwidth Product
AV = +100
25°C
2.0
GHz
LSBWa
-3dB Bandwidth
VOUT = 2VPP
[1]
MHz
LSBWb
-3dB Bandwidth
VOUT = 5VPP
[1]
GFPL
Peaking (<50MHz)
VOUT = 0.4VPP
All
80
128
All
32
50
25°C
0
TMIN, TMAX
GFPH
Peaking (>50MHz)
VOUT = 0.4VPP
GFR
Rolloff (<100MHz)
VOUT = 0.4VPP
25°C
Linear Phase Deviation (<100MHz)
VOUT = 0.4VPP
PM
Phase Margin
tr1, tf1
dB
dB
0
1
dB
1
dB
0.1
0.5
dB
0.5
dB
1.8
°
TMIN, TMAX
LPD
MHz
0.5
0.5
TMIN, TMAX
25°C
MHz
All
1
AV = +10
25°C
60
°
Rise Time, Fall Time
0.4V Step, AV = +10
25°C
1.2
ns
tr2, tf2
Rise Time, Fall Time
5V Step, AV = +10
25°C
6
ns
ts1
Settling to 0.1% (AV = -20)
2V Step
25°C
13
ns
ts2
Settling to 0.01% (AV = -20)
2V Step
25°C
25
ns
OS
Overshoot
2V Step, AV = +10
25°C
10
%
SR
Slew Rate
2V Step, AV = +10
All
800
V/µs
2nd Harmonic Distortion
@ 20MHz, AV = +20
500
DISTORTION [2]
HD2
25°C
-40
TMIN, TMAX
HD3
3rd Harmonic Distortion
@ 20MHz, AV = +20
25°C
TMIN, TMAX
1. Large-signal bandwidth calculated using LSBW = Slew Rate / (2¼ • VPEAK).
2. All distortion measurements are made with VOUT = 2VPP, RL = 100¾.
3
-65
-30
dBc
-30
dBc
-50
dBc
-50
dBc
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
Typical Performance Curves
Non-Inverting
Frequency Response
Inverting Frequency Response
Frequency Response
for Various RLs
Open Loop Gain
and Phase
Output Voltage Swing
vs Frequency
Equivalent Input Noise
PSRR, CMRR, and Closed-Loop
RO Frequency
2nd and 3rd Harmonic
Distortion vs Frequency
2-Tone, 3rd Order
Intermodulation Intercept
4
Series Resistor and Resulting
Bandwidth vs Capacitive Load
Common-Mode Rejection Ratio vs
Input Common-Mode Voltage
Bias and Offset Current
vs Temperature
Settling Time vs
Output Voltage Change
Settling Time vs
Closed-Loop Gain
Bias and Offset Current vs
Input Common-Mode Voltage
Supply Current
vs Temperature
Offset Voltage
vs Temperature
AVOL, PSRR, and CMRR
vs Temperature
5
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
Small Signal Transient Response
Large Signal Transient Response
6
Equivalent Circuit
Burn-In Circuit
All Packages Use The Same Schematic
7
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
Applications Information
Product Description
choice for RF and IF applications. Furthermore, the current drive of the EL2075C remains a minimum of 50mA
at low temperatures. The EL2075C is current-limited at
the output, allowing it to withstand momentary shorts to
ground. However, power dissipation with the output
shorted can be in excess of the power-dissipation capabilities of the package.
The EL2075C is a wideband monolithic operational
amplifier built on a high-speed complementary bipolar
process. The EL2075C uses a classical voltage-feedback
topology which allows it to be used in a variety of applications requiring a noise gain ≥10 where currentfeedback amplifiers are not appropriate because of
restrictions placed upon the feedback element used with
the amplifier. The conventional topology of the
EL2075C allows, for example, a capacitor to be placed
in the feedback path, making it an excellent choice for
applications such as active filters, sample-and-holds, or
integrators. Similarly, because of the ability to use
diodes in the feedback network, the EL2075C is an
excellent choice for applications such as log amplifiers.
Capacitive Loads
Although the EL2075C has been optimized to drive
resistive loads as low as 50Ω, capacitive loads will
decrease the amplifier's phase margin which may result
in peaking, overshoot, and possible oscillation. For optimum AC performance, capacitive loads should be
reduced as much as possible or isolated via a series output resistor. Coax lines can be driven, as long as they are
terminated with their characteristic impedance. When
properly terminated, the capacitance of coaxial cable
will not add to the capacitive load seen by the amplifier.
Capacitive loads greater than 10pF should be buffered
with a series resistor (Rs) to isolate the load capacitance
from the amplifier output. A curve of recommended Rs
vs Cload has been included for reference. Values of Rs
were chosen to maximize resulting bandwidth without
additional peaking.
The EL2075C also has excellent DC specifications:
200µV, VOS, 2µA IB, 0.1µA IOS, and 90dB of CMRR.
These specifications allow the EL2075C to be used in
DC-sensitive applications such as difference amplifiers.
Furthermore, the current noise of the EL2075C is only
3.2 pA/√Hz, making it an excellent choice for high-sensitivity transimpedance amplifier configurations.
Gain-Bandwidth Product
The EL2075C has a gain-bandwidth product of 2GHz.
For gains greater than 40, its closed-loop -3dB bandwidth
is approximately equal to the gain-bandwidth product
divided by the noise gain of the circuit. For gains less
than 40, higher-order poles in the amplifier's transfer
function contribute to even higher closed loop bandwidths. For example, the EL2075C has a -3dB bandwidth
of 400MHz at a gain of +10, dropping to 200MHz at a
gain of +20. It is important to note that the EL2075C has
been designed so that this “extra” bandwidth in low-gain
applications does not come at the expense of stability. As
seen in the typical performance curves, the EL2075C in a
gain of +10 only exhibits 1.5dB of peaking with a 100Ω
load.
Printed-Circuit Layout
As with any high-frequency device, good PCB layout is
necessary for optimum performance. Ground-plane construction is highly recommended, as is good power
supply bypassing. A 1µF–10µF tantalum capacitor is
recommended in parallel with a 0.01µF ceramic capacitor. All lead lengths should be as short as possible, and
all bypass capacitors should be as close to the device
pins as possible. Parasitic capacitances should be kept to
an absolute minimum at both inputs and at the output.
Resistor values should be kept under 1000Ω to 2000Ω
because of the RC time constants associated with the
parasitic capacitance. Metal-film and carbon resistors
are both acceptable, use of wire-wound resistors is not
recommended because of parasitic inductance. Similarly, capacitors should be low-inductance for best
performance. If possible, solder the EL2075C directly to
the PC board without a socket. Even high quality sockets
Output Drive Capability
The EL2075C has been optimized to drive 50Ω and 75Ω
loads. It can easily drive 6VPP into a 50Ω load. This high
output drive capability makes the EL2075C an ideal
8
surface-mount components (resistors, capacitors, etc.) is
also recommended.
add parasitic capacitance and inductance which can
potentially degrade performance. Because of the degradation of AC performance due to parasitics, the use of
9
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
EL2075C Macromodel
*
* Connections: input
*
| -input
*
| | +Vsupply
*
| | | -Vsupply
*
| | | | output
*
| | | | |
.subckt M2075C 3 2 7 4 6
*
*Input Stage
*
ie 37 4 1mA
r6 36 37 15
r7 38 37 15
rc1 7 30 200
rc2 7 39 200
q1 30 3 36 qn
q2 39 2 38 qna
ediff 33 0 39 30 1
rdiff 33 0 1 Meg
*
* Compensation Section
*
ga 0 34 33 0 2m
rh 34 0 500K
ch 34 0 0.4 pF
rc 34 40 50
cc 40 0 0.05 pF
*
* Poles
*
ep 41 0 40 0 1
rpa 41 42 250
cpa 42 0 0.8 pF
rpb 42 43 50
cpb 43 0 0.5 pF
*
* Output Stage
*
ios1 7 50 3.0mA
ios2 51 4 3.0mA
q3 4 43 50 qp
q4 7 43 51 qn
q5 7 50 52 qn
q6 4 51 53 qp
ros1 52 6 2
ros2 6 53 2
*
* Power Supply Current
*
ips 7 4 11.4mA
*
* Models
*
.model qna npn(is800e-18 bf170 tf0.2ns)
.model qn npn(is810e-18 bf200 tf0.2ns)
.model qp pnp(is800e-18 bf200 tf0.2ns)
.ends
10
EL2075C
EL2075C
2GHz GBWP Gain-of-10 Stable Operational Amplifier
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
September 26, 2001
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax:
(408) 945-9305
European Office: +44-118-977-6020
Japan Technical Center: +81-45-682-5820
11
Printed in U.S.A.
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