Fairchild FAN3214T Dual-4a, high-speed, low-side gate driver Datasheet

FAN3213 / FAN3214
Dual-4A, High-Speed, Low-Side Gate Drivers
Features
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




Description
Industry-Standard Pinouts
4.5 to 18V Operating Range
5A Peak Sink/Source at VDD = 12V
4.3A Sink / 2.8A Source at VOUT = 6V
TTL Input Thresholds
Two Versions of Dual Independent Drivers:
-
Dual Inverting (FAN3213)
Dual Non-Inverting (FAN3214)




Internal Resistors Turn Driver Off If No Inputs



Double Current Capability by Paralleling Channels
MillerDrive™ Technology
12ns / 9ns Typical Rise/Fall Times with 2.2nF Load
Typical Propagation Delay Under 20ns Matched
within 1ns to the Other Channel
Standard SOIC-8 Package
Rated from –40°C to +125°C Ambient
The FAN3213/14 drivers incorporate MillerDrive™
architecture for the final output stage. This bipolarMOSFET combination provides high current during the
Miller plateau stage of the MOSFET turn-on / turn-off
process to minimize switching loss, while providing railto-rail voltage swing and reverse current capability.
The FAN3213 offers two inverting drivers and the
FAN3214 offers two non-inverting drivers. Both are
offered in a standard 8-pin SOIC package.
Applications





The FAN3213 and FAN3214 dual 4A gate drivers are
designed to drive N-channel enhancement-mode
MOSFETs in low-side switching applications by
providing high peak current pulses during the short
switching intervals. They are both available with TTL
input thresholds. Internal circuitry provides an undervoltage lockout function by holding the output LOW until
the supply voltage is within the operating range. In
addition, the drivers feature matched internal
propagation delays between A and B channels for
applications requiring dual gate drives with critical
timing, such as synchronous rectifiers. This also enables
connecting two drivers in parallel to effectively double
the current capability driving a single MOSFET.
Switch-Mode Power Supplies
High-Efficiency MOSFET Switching
Synchronous Rectifier Circuits
DC-to-DC Converters
Motor Control
FAN3213
FAN3214
Figure 1. Pin Configurations
Ordering Information
Part Number
Logic
Input
Threshold
Package
Packing
Method
Quantity
per Reel
FAN3213TMX
Dual Inverting Channels
TTL
SOIC-8
Tape & Reel
2,500
FAN3214TMX
Dual Non-Inverting Channels
TTL
SOIC-8
Tape & Reel
2,500
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
January 2011
Figure 2. SOIC-8 (Top View)
Thermal Characteristics(1)
Package
8-Pin Small Outline Integrated Circuit (SOIC)
JL(2)
JT(3)
JA(4)
JB(5)
JT(6)
Units
38
29
87
41
2.3
°C/W
Notes:
1.
2.
3.
4.
5.
6.
Estimates derived from thermal simulation; actual values depend on the application.
Theta_JL (JL): Thermal resistance between the semiconductor junction and the bottom surface of all the leads (including any
thermal pad) that are typically soldered to a PCB.
Theta_JT (JT): Thermal resistance between the semiconductor junction and the top surface of the package, assuming it is
held at a uniform temperature by a top-side heatsink.
Theta_JA (ΘJA): Thermal resistance between junction and ambient, dependent on the PCB design, heat sinking, and airflow.
The value given is for natural convection with no heatsink, using a 2S2P board, as specified in JEDEC standards JESD51-2,
JESD51-5, and JESD51-7, as appropriate.
Psi_JB (JB): Thermal characterization parameter providing correlation between semiconductor junction temperature and an
application circuit board reference point for the thermal environment defined in Note 4. For the SOIC-8 package, the board
reference is defined as the PCB copper adjacent to pin 6.
Psi_JT (JT): Thermal characterization parameter providing correlation between the semiconductor junction temperature and
the center of the top of the package for the thermal environment defined in Note 4.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
2
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Package Outlines
FAN3213
FAN3214
Figure 3. Pin Configurations (Repeated)
Pin Definitions
Pin
Name
1
NC
No Connect. This pin can be grounded or left floating.
2
INA
Input to Channel A.
3
GND
Ground. Common ground reference for input and output circuits.
2
INA
Input to Channel A.
4
INB
Input to Channel B.
7
Pin Description
OUTA
Gate Drive Output A: Held LOW unless required input(s) are present and VDD is above
UVLO threshold.
5
(FAN3213)
OUTB
Gate Drive Output B (inverted from the input): Held LOW unless required input is
present and VDD is above UVLO threshold.
5
(FAN3214)
OUTB
Gate Drive Output B: Held LOW unless required input(s) are present and VDD is above
UVLO threshold.
6
VDD
7
(FAN3213)
OUTA
Gate Drive Output A (inverted from the input): Held LOW unless required input is
present and VDD is above UVLO threshold.
7
(FAN3214)
OUTA
Gate Drive Output A: Held LOW unless required input(s) are present and VDD is above
UVLO threshold.
8
NC
Supply Voltage. Provides power to the IC.
No Connect. This pin can be grounded or left floating.
Output Logic
FAN3213 (x=A or B)
FAN3214 (x=A or B)
INx
OUTx
INx
OUTx
0
0
0(7)
0
(7)
0
1
0
0
1
(7)
0
1(7)
0
1
1
1
0
Note:
7. Default input signal if no external connection is made.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
3
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Pin Configurations
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Block Diagrams
Figure 4. FAN3213 Block Diagram
Figure 5. FAN3214 Block Diagram
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
4
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
-0.3
20.0
V
VDD
VDD to PGND
VIN
INA, INA+, INA–, INB, INB+ and INB– to GND
GND - 0.3 VDD + 0.3
V
OUTA and OUTB to GND
GND - 0.3 VDD + 0.3
V
VOUT
TL
Lead Soldering Temperature (10 Seconds)
TJ
Junction Temperature
TSTG
Storage Temperature
ESD
Electrostatic Discharge
Protection Level
+260
ºC
-55
+150
ºC
-65
+150
ºC
Human Body Model, JEDEC JESD22-A114
4
Charged Device Model, JEDEC JESD22-C101
1
kV
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
VDD
Supply Voltage Range
VIN
Input Voltage INA, INA+, INA–, INB, INB+ and INB–
TA
Operating Ambient Temperature
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
Min.
Max.
Unit
4.5
18.0
V
0
VDD
V
-40
+125
ºC
www.fairchildsemi.com
5
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Absolute Maximum Ratings
Unless otherwise noted, VDD=12V, TJ=-40°C to +125°C. Currents are defined as positive into the device and negative
out of the device.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
18.0
V
0.70
0.95
mA
Supply
VDD
Operating Range
4.5
IDD
Supply Current, Inputs Not Connected
VON
Turn-On Voltage
INA = VDD, INB = 0V
3.5
3.9
4.3
V
VOFF
Turn-Off Voltage
INA = VDD, INB = 0V
3.3
3.7
4.1
V
0.8
1.2
Inputs
VIL_T
INx Logic Low Threshold
VIH_T
INx Logic High Threshold
1.6
V
2.0
V
IIN+
Non-Inverting Input
IN from 0 to VDD
-1.5
175.0
µA
IIN-
Inverting Input
IN from 0 to VDD
-175.0
1.5
µA
0.8
V
VHYS_T
TTL Logic Hysteresis Voltage
0.2
0.4
Output
OUT Current, Mid-Voltage, Sinking(8)
OUTx at VDD/2,
CLOAD=0.22µF, f=1kHz
4.3
A
ISOURCE
OUT Current, Mid-Voltage, Sourcing(8)
OUTx at VDD/2,
CLOAD=0.22µF, f=1kHz
-2.8
A
IPK_SINK
OUT Current, Peak, Sinking(8)
CLOAD=0.22µF, f=1kHz
5
A
CLOAD=0.22µF, f=1kHz
-5
A
CLOAD=2200pF
12
20
ns
CLOAD=2200pF
9
17
ns
17
29
ns
2
4
ns
ISINK
(8)
IPK_SOURCE OUT Current, Peak, Sourcing
tRISE
tFALL
tD1, tD2
IRVS
(9)
Output Rise Time
(9)
Output Fall Time
(9)
Output Propagation Delay, TTL Inputs
0 - 5VIN, 1V/ns Slew Rate
Propagation Matching Between Channels
INA=INB, OUTA and OUTB
at 50% Point
Output Reverse Current Withstand(8)
9
500
mA
Notes:
8. Not tested in production.
9. See Timing Diagrams of Figure 6 and Figure 7.
Figure 6. Non-Inverting Timing Diagram
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
Figure 7. Inverting Timing Diagram
www.fairchildsemi.com
6
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Electrical Characteristics
Typical characteristics are provided at TA=25°C and VDD=12V unless otherwise noted.
Figure 8. IDD (Static) vs. Supply Voltage(10)
Figure 9. IDD (Static) vs. Temperature(10)
Figure 10. IDD (No Load) vs. Frequency
Figure 11. IDD (2.2nF Load) vs. Frequency
Figure 12. Input Thresholds vs. Supply Voltage
Figure 13. Input Thresholds vs. Temperature
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
7
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Typical Performance Characteristics
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Typical Performance Characteristics
Typical characteristics are provided at TA=25°C and VDD=12V unless otherwise noted.
UVLO Threshold vs. Temperature
Figure 14. Propagation Delay vs. Supply Voltage
Figure 15. Propagation Delay vs. Supply Voltage
Figure 16. Propagation Delays vs. Temperature
Figure 17. Propagation Delays vs. Temperature
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
8
Typical characteristics are provided at TA=25°C and VDD=12V unless otherwise noted.
Figure 18. Fall Time vs. Supply Voltage
Figure 19. Rise Time vs. Supply Voltage
Figure 20. Rise and Fall Times vs. Temperature
Figure 21. Rise/Fall Waveforms with 2.2nF Load
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
Figure 22. Rise/Fall Waveforms with 10nF Load
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9
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Typical Performance Characteristics
Typical characteristics are provided at TA=25°C and VDD=12V unless otherwise noted.
Figure 23. Quasi-Static Source Current
with VDD=12V(11)
Figure 24. Quasi-Static Sink Current with VDD=12V(11)
Figure 25. Quasi-Static Source Current
with VDD=8V(11)
Figure 26. Quasi-Static Sink Current with VDD=8V(11)
Notes:
10. For any inverting inputs pulled LOW, non-inverting inputs pulled HIGH, or outputs driven HIGH; static IDD
increases by the current flowing through the corresponding pull-up/down resistor shown in Figure 4 and Figure 5.
11. The initial spike in each current waveform is a measurement artifact caused by the stray inductance of the currentmeasurement loop.
Test Circuit
Figure 27. Quasi-Static IOUT / VOUT Test Circuit
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
10
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Typical Performance Characteristics
Input Thresholds
The FAN3213 and the FAN3214 drivers consist of two
identical channels that may be used independently at
rated current or connected in parallel to double the
individual current capacity.
The input thresholds meet industry-standard TTL-logic
thresholds independent of the VDD voltage, and there is
a hysteresis voltage of approximately 0.4V. These levels
permit the inputs to be driven from a range of input logic
signal levels for which a voltage over 2V is considered
logic HIGH. The driving signal for the TTL inputs should
have fast rising and falling edges with a slew rate of
6V/µs or faster, so a rise time from 0 to 3.3V should be
550ns or less. With reduced slew rate, circuit noise
could cause the driver input voltage to exceed the
hysteresis voltage and retrigger the driver input, causing
erratic operation.
Figure 28. MillerDrive™ Output Architecture
Under-Voltage Lockout
The FAN321x startup logic is optimized to drive groundreferenced N-channel MOSFETs with an under-voltage
lockout (UVLO) function to ensure that the IC starts up
in an orderly fashion. When VDD is rising, yet below the
3.9V operational level, this circuit holds the output LOW,
regardless of the status of the input pins. After the part
is active, the supply voltage must drop 0.2V before the
part shuts down. This hysteresis helps prevent chatter
when low VDD supply voltages have noise from the
power switching. This configuration is not suitable for
driving high-side P-channel MOSFETs because the low
output voltage of the driver would turn the P-channel
MOSFET on with VDD below 3.9V.
Static Supply Current
In the IDD (static) typical performance characteristics
shown in Figure 8 and Figure 9, each curve is produced
with both inputs floating and both outputs LOW to
indicate the lowest static IDD current. For other states,
additional current flows through the 100k resistors on
the inputs and outputs shown in the block diagram of
each part (see Figure 4 and Figure 5). In these cases,
the actual static IDD current is the value obtained from
the curves plus this additional current.
MillerDrive™ Gate Drive Technology
VDD Bypass Capacitor Guidelines
FAN3213 and FAN3214 gate drivers incorporate the
MillerDrive™ architecture shown in Figure 28. For the
output stage, a combination of bipolar and MOS devices
provide large currents over a wide range of supply
voltage and temperature variations. The bipolar devices
carry the bulk of the current as OUT swings between 1/3
to 2/3 VDD and the MOS devices pull the output to the
HIGH or LOW rail.
To enable this IC to turn a device ON quickly, a local
high-frequency bypass capacitor, CBYP, with low ESR
and ESL should be connected between the VDD and
GND pins with minimal trace length. This capacitor is in
addition to bulk electrolytic capacitance of 10µF to 47µF
commonly found on driver and controller bias circuits.
A typical criterion for choosing the value of CBYP is to
keep the ripple voltage on the VDD supply to ≤ 5%. This
is often achieved with a value ≥ 20 times the equivalent
load capacitance CEQV, defined here as QGATE/VDD.
Ceramic capacitors of 0.1µF to 1µF or larger are
common choices, as are dielectrics, such as X5R and
X7R, with good temperature characteristics and high
pulse current capability.
The purpose of the MillerDrive™ architecture is to speed
up switching by providing high current during the Miller
plateau region when the gate-drain capacitance of the
MOSFET is being charged or discharged as part of the
turn-on / turn-off process.
For applications with zero voltage switching during the
MOSFET turn-on or turn-off interval, the driver supplies
high peak current for fast switching even though the
Miller plateau is not present. This situation often occurs
in synchronous rectifier applications because the body
diode is generally conducting before the MOSFET is
switched ON.
If circuit noise affects normal operation, the value of
CBYP may be increased, to 50-100 times the CEQV, or
CBYP may be split into two capacitors. One should be a
larger value, based on equivalent load capacitance, and
the other a smaller value, such as 1-10nF mounted
closest to the VDD and GND pins to carry the higherfrequency components of the current pulses. The
bypass capacitor must provide the pulsed current from
both of the driver channels and, if the drivers are
switching simultaneously, the combined peak current
sourced from the CBYP would be twice as large as when
a single channel is switching.
The output pin slew rate is determined by VDD voltage
and the load on the output. It is not user adjustable, but
a series resistor can be added if a slower rise or fall time
at the MOSFET gate is needed.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
11
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Applications Information
The FAN3213 and FAN3214 gate drivers incorporate
fast-reacting input circuits, short propagation delays,
and powerful output stages capable of delivering current
peaks over 4A to facilitate voltage transition times from
under 10ns to over 150ns. The following layout and
connection guidelines are strongly recommended:

Keep high-current output and power ground paths
separate from logic input signals and signal ground
paths. This is especially critical for TTL-level logic
thresholds at driver input pins.

Keep the driver as close to the load as possible to
minimize the length of high-current traces. This
reduces the series inductance to improve highspeed switching, while reducing the loop area that
can radiate EMI to the driver inputs and surrounding
circuitry.

If the inputs to a channel are not externally
connected, the internal 100k resistors indicated
on block diagrams command a low output. In noisy
environments, it may be necessary to tie inputs of
an unused channel to VDD or GND using short
traces to prevent noise from causing spurious
output switching.

Many high-speed power circuits can be susceptible
to noise injected from their own output or other
external sources, possibly causing output retriggering. These effects can be obvious if the
circuit is tested in breadboard or non-optimal circuit
layouts with long input or output leads. For best
results, make connections to all pins as short and
direct as possible.

FAN3213 and FAN3214 are pin-compatible with
many other industry-standard drivers.

The turn-on and turn-off current paths should be
minimized, as discussed in the following section.
Figure 29. Current Path for MOSFET Turn-On
Figure 30 shows the current path when the gate driver
turns the MOSFET OFF. Ideally, the driver shunts the
current directly to the source of the MOSFET in a small
circuit loop. For fast turn-off times, the resistance and
inductance in this path should be minimized.
Figure 30. Current Path for MOSFET Turn-Off
Figure 29 shows the pulsed gate drive current path
when the gate driver is supplying gate charge to turn the
MOSFET on. The current is supplied from the local
bypass capacitor, CBYP, and flows through the driver to
the MOSFET gate and to ground. To reach the high
peak currents possible, the resistance and inductance in
the path should be minimized. The localized CBYP acts to
contain the high peak current pulses within this driverMOSFET circuit, preventing them from disturbing the
sensitive analog circuitry in the PWM controller.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
12
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Layout and Connection Guidelines
At power-up, the driver output remains LOW until the
VDD voltage reaches the turn-on threshold. The
magnitude of the OUT pulses rises with VDD until steadystate VDD is reached. The non-inverting operation
illustrated in Figure 31 shows that the output remains
LOW until the UVLO threshold is reached, then the
output is in-phase with the input.
The inverting configuration of startup waveforms are
shown in Figure 32. With IN+ tied to VDD and the input
signal applied to IN–, the OUT pulses are inverted with
respect to the input. At power-up, the inverted output
remains LOW until the VDD voltage reaches the turn-on
threshold, then it follows the input with inverted phase.
Figure 31. Non-Inverting Startup Waveforms
Figure 32. Inverting Startup Waveforms
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
13
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Operational Waveforms
Gate drivers used to switch MOSFETs and IGBTs at
high frequencies can dissipate significant amounts of
power. It is important to determine the driver power
dissipation and the resulting junction temperature in the
application to ensure that the part is operating within
acceptable temperature limits.
To give a numerical example, if the synchronous rectifier
switches in the forward converter of Figure 33 are
FDMS8660S, the datasheet gives a total gate charge of
60nC at VGS = 7V, so two devices in parallel would have
120nC gate charge. At a switching frequency of 300kHz,
the total power dissipation is:
The total power dissipation in a gate driver is the sum of
two components, PGATE and PDYNAMIC:
PTOTAL = PGATE + PDYNAMIC
(1)
Gate Driving Loss: The most significant power loss
results from supplying gate current (charge per unit
time) to switch the load MOSFET on and off at the
switching frequency. The power dissipation that
results from driving a MOSFET at a specified gatesource voltage, VGS, with gate charge, QG, at
switching frequency, fSW , is determined by:
PGATE = QG • VGS • fSW • n
(5)
PDYNAMIC = 7.5mA • 7V • 2 = 0.011W
(6)
PTOTAL = 0.515W ≈ 0.52W
(7)
The SOIC-8 has a junction-to-board thermal
characterization parameter of JB = 42°C/W. In a system
application, the localized temperature around the device
is a function of the layout and construction of the PCB
along with airflow across the surfaces. To ensure
reliable operation, the maximum junction temperature of
the device must be prevented from exceeding the
maximum rating of 150°C; with 80% derating, TJ would
be limited to 120°C. Rearranging Equation 4 determines
the board temperature required to maintain the junction
temperature below 120°C:
(2)
where n is the number of driver channels in use (1 or 2).
Dynamic Pre-Drive / Shoot-through Current: A power
loss resulting from internal current consumption under
dynamic operating conditions, including pin pull-up /
pull-down resistors, can be obtained using the graphs
in Typical Performance Characteristics to determine
the current IDYNAMIC drawn from VDD under actual
operating conditions:
PDYNAMIC = IDYNAMIC • VDD • n
PGATE = 120nC • 7V • 300kHz • 2 = 0.504W
TB,MAX = TJ - PTOTAL • JB
(8)
TB,MAX = 120°C – 0.52W • 42°C/W = 98°C
(9)
(3)
Once the power dissipated in the driver is determined,
the driver junction rise with respect to circuit board can
be evaluated using the following thermal equation,
assuming JB was determined for a similar thermal
design (heat sinking and air flow):
TJ
= PTOTAL • JB + TB
(4)
where:
TJ
= driver junction temperature;
JB
= (psi) thermal characterization parameter
relating temperature rise to total power
dissipation; and
TB
= board temperature in location as defined in
the Thermal Characteristics table.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
14
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Thermal Guidelines
Figure 33. High-Current Forward Converter
with Synchronous Rectification
Vin
Figure 34.
QC
QA
QD
QB
Center-Tapped Bridge Output with
Synchronous Rectifiers
FAN3214
PWM-A
FAN3227
SR-1
PWM-B
Secondary
Phase Shift
Controller
SR-2
PWM-C
FAN3227
PWM-D
Figure 35. Secondary Controlled Full Bridge with Current Doubler Output,
Synchronous Rectifiers (Simplified)
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
15
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Typical Application Diagrams
Type
Related Products
Part
Number
(12)
Gate Drive
(Sink/Src)
Input
Threshold
Single 1A
FAN3111C
+1.1A / -0.9A
CMOS
Single 1A
FAN3111E
+1.1A / -0.9A
External
Single 2A
FAN3100C
+2.5A / -1.8A
Single 2A
FAN3100T
Dual 2A
Logic
Package
Single Channel of Dual-Input/Single-Output
SOT23-5, MLP6
Single Non-Inverting Channel with External Reference
SOT23-5, MLP6
CMOS
Single Channel of Two-Input/One-Output
SOT23-5, MLP6
+2.5A / -1.8A
TTL
Single Channel of Two-Input/One-Output
SOT23-5, MLP6
FAN3216T
+2.5A / -1.8A
TTL
Dual Inverting Channels
SOIC8
Dual 2A
FAN3217T
+2.5A / -1.8A
TTL
Dual Non-Inverting Channels
SOIC8
Dual 2A
FAN3226C
+2.4A / -1.6A
CMOS
Dual Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 2A
FAN3226T
+2.4A / -1.6A
TTL
Dual Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 2A
FAN3227C
+2.4A / -1.6A
CMOS
Dual Non-Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 2A
FAN3227T
+2.4A / -1.6A
TTL
Dual Non-Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 2A
FAN3228C
+2.4A / -1.6A
CMOS
Dual Channels of Two-Input/One-Output, Pin Config.1
SOIC8, MLP8
Dual 2A
FAN3228T
+2.4A / -1.6A
TTL
Dual Channels of Two-Input/One-Output, Pin Config.1
SOIC8, MLP8
Dual 2A
FAN3229C
+2.4A / -1.6A
CMOS
Dual Channels of Two-Input/One-Output, Pin Config.2
SOIC8, MLP8
Dual 2A
FAN3229T
+2.4A / -1.6A
TTL
Dual Channels of Two-Input/One-Output, Pin Config.2
SOIC8, MLP8
Dual 2A
FAN3268T
+2.4A / -1.6A
TTL
20V Non-Inverting Channel (NMOS) and Inverting
Channel (PMOS) + Dual Enables
SOIC8
Dual 2A
FAN3278T
+2.4A / -1.6A
TTL
30V Non-Inverting Channel (NMOS) and Inverting
Channel (PMOS) + Dual Enables
SOIC8
Dual 4A
FAN3213T
+2.5A / -1.8A
TTL
Dual Inverting Channels
SOIC8
Dual 4A
FAN3214T
+2.5A / -1.8A
TTL
Dual Non-Inverting Channels
SOIC8
Dual 4A
FAN3223C
+4.3A / -2.8A
CMOS
Dual Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 4A
FAN3223T
+4.3A / -2.8A
TTL
Dual Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 4A
FAN3224C
+4.3A / -2.8A
CMOS
Dual Non-Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 4A
FAN3224T
+4.3A / -2.8A
TTL
Dual Non-Inverting Channels + Dual Enable
SOIC8, MLP8
Dual 4A
FAN3225C
+4.3A / -2.8A
CMOS
Dual Channels of Two-Input/One-Output
SOIC8, MLP8
Dual 4A
FAN3225T
+4.3A / -2.8A
TTL
Dual Channels of Two-Input/One-Output
SOIC8, MLP8
Single 9A
FAN3121C
+9.7A / -7.1A
CMOS
Single Inverting Channel + Enable
SOIC8, MLP8
Single 9A
FAN3121T
+9.7A / -7.1A
TTL
Single Inverting Channel + Enable
SOIC8, MLP8
Single 9A
FAN3122T
+9.7A / -7.1A
CMOS
Single Non-Inverting Channel + Enable
SOIC8, MLP8
Single 9A
FAN3122C
+9.7A / -7.1A
TTL
Single Non-Inverting Channel + Enable
SOIC8, MLP8
(13)
Notes:
12. Typical currents with OUTx at 6V and VDD=12V.
13. Thresholds proportional to an externally supplied reference voltage.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
16
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Table 1.
5.00
4.80
A
0.65
3.81
5
8
B
6.20
5.80
PIN ONE
INDICATOR
1.75
4.00
3.80
1
5.60
4
1.27
(0.33)
0.25
M
1.27
C B A
LAND PATTERN RECOMMENDATION
0.25
0.10
SEE DETAIL A
1.75 MAX
0.25
0.19
C
0.10
0.51
0.33
0.50 x 45°
0.25
R0.10
C
OPTION A - BEVEL EDGE
GAGE PLANE
R0.10
OPTION B - NO BEVEL EDGE
0.36
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0°
0.90
0.406
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA, ISSUE C,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08AREV13
SEATING PLANE
(1.04)
DETAIL A
SCALE: 2:1
Figure 36. 8-Lead Small Outline Integrated Circuit (SOIC)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
17
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
Physical Dimensions
FAN3213 / FAN3214 — Dual-4A, High-Speed, Low-Side Gate Drivers
© 2008 Fairchild Semiconductor Corporation
FAN3213 / FAN3214 • Rev. 1.0.2
www.fairchildsemi.com
18
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