Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 180 Min. (All Leads) • • • • • • G All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss f=12GHz f=18GHz f=12GHz f=18GHz MIN TYP 20.0 22.0 22.0 8.0 5.0 6.5 f=12GHz MAX UNIT dBm dB % 33 Idss Saturated Drain Current Vds=3V, Vgs=0V 60 105 Gm Transconductance Vds=3V, Vgs=0V 45 60 Vp Pinch-off Voltage Vds=3V, Ids=1.0 mA BVgd Drain Breakdown Voltage Igd=1.0mA -10 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -6 -14 V Rth Thermal Resistance -2.0 160 mS -3.5 250* * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 mA CONTINUOUS2 Drain-Source Voltage 10V 6V Vds Gate-Source Voltage -6V -4V Vgs Drain Current Idss 75mA Ids Forward Gate Current 10mA 1.5mA Igsf Input Power 21dBm @ 3dB Compression Pin Channel Temperature 175oC 150 oC Tch Storage Temperature -65/175oC -65/150 oC Tstg Total Power Dissipation 550mW 445mW Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EFA040A-70 DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.971 -30.2 0.908 -59.1 0.842 -84.8 0.782 -109.8 0.726 -133.4 0.686 -152.0 0.652 -172.6 0.626 167.7 0.631 140.1 0.652 117.8 0.659 103.2 0.681 86.0 0.739 69.3 0.776 55.3 0.787 41.1 0.798 25.7 0.789 15.5 0.803 7.3 0.821 -7.7 0.846 -19.7 0.829 -28.2 0.795 -39.9 0.808 -56.6 0.819 -69.7 0.756 -84.3 0.754 -103.8 6V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 4.747 154.4 0.021 72.3 4.348 130.0 0.037 55.5 3.860 108.4 0.047 42.9 3.516 88.8 0.052 33.0 3.212 70.4 0.055 24.9 2.939 53.7 0.055 20.6 2.687 37.1 0.055 16.8 2.492 21.4 0.054 16.2 2.292 4.2 0.057 17.8 2.096 -12.5 0.063 14.5 2.002 -28.6 0.073 9.8 1.899 -45.5 0.083 2.8 1.706 -61.4 0.088 -6.5 1.513 -76.5 0.091 -16.1 1.400 -94.1 0.095 -29.4 1.269 -113.2 0.094 -44.6 1.103 -126.3 0.092 -50.4 1.043 -138.6 0.101 -67.9 0.928 -155.5 0.085 -83.5 0.854 -171.7 0.080 -98.6 0.801 173.6 0.076 -113.9 0.760 160.1 0.076 -129.4 0.695 142.7 0.075 -147.4 0.633 124.1 0.078 -168.0 0.617 107.6 0.089 176.3 0.634 90.8 0.117 161.8 --- S22 --MAG ANG 0.714 -14.0 0.681 -29.1 0.651 -42.1 0.626 -52.4 0.592 -62.1 0.558 -74.9 0.543 -86.4 0.517 -96.6 0.511 -104.6 0.497 -118.4 0.485 -137.9 0.480 -157.0 0.463 -173.7 0.465 168.8 0.498 144.8 0.518 120.3 0.516 105.9 0.574 93.1 0.604 75.9 0.657 59.9 0.654 47.1 0.650 38.6 0.629 20.9 0.617 0.1 0.618 -14.7 0.599 -30.8