APTC60TDUM35P Triple dual Common Source Super Junction MOSFET Power Module D3 G1 G3 S1 S3 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 G5 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D5 Benefits • Outstanding performance at high frequency operation S1 S3 S5 S1/S2 S3/S4 S5/S6 • Direct mounting to heatsink (isolated package) S2 S4 S6 • Low junction to case thermal resistance G2 G4 G6 • Solderable terminals both for power and signal for easy PCB mounting D2 D4 D6 • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Current A Tc = 80°C 54 IDM Pulsed Drain current 200 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 35 mΩ PD Maximum Power Dissipation Tc = 25°C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 G1 G3 G5 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTC60TDUM35P – Rev 0 September, 2004 D1 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C APTC60TDUM35P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min 600 Tj = 25°C Tj = 125°C VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z Reverse Recovery Time Qrr Reverse Recovery Charge 1 40 375 35 3.9 ±150 mΩ V nA Max Unit 3 Min Typ 14 5.13 0.42 518 VGS = 10V VBus = 300V ID = 72A µA nC 222 21 30 Test Conditions 84 1340 µJ 1960 2192 µJ 2412 Min Tc = 25°C Tc = 80°C ns 283 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Typ 72 54 VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/µs Unit V nF 58 Source - Drain diode ratings and characteristics Symbol IS Max 2.1 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A R G = 2.5Ω Rise Time Typ Max Unit A 1.2 6 Tj = 25°C 580 V V/ns ns Tj = 25°C 46 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 72A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTC60TDUM35P – Rev 0 September, 2004 Symbol BVDSS APTC60TDUM35P Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.3 150 125 100 5 250 Unit °C/W V °C N.m g Package outline APT website – http://www.advancedpower.com 3-6 APTC60TDUM35P – Rev 0 September, 2004 5 places (3:1) APTC60TDUM35P Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics VGS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 TJ=125°C 40 TJ=25°C TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 36A 1.05 VGS =10V VGS=20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 70 60 50 40 30 20 10 0 0 20 40 60 80 I D, Drain Current (A) 100 120 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4-6 APTC60TDUM35P – Rev 0 September, 2004 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) 280 I D, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 µs limited by RDSon 100 1 ms 10 DC line 1 10 ms Single pulse TJ =150°C 0.1 -50 -25 0 25 50 75 100 125 150 1 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 1000 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 72A 14 ID=72A TJ=25°C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 0 100 APT website – http://www.advancedpower.com 200 300 400 Gate Charge (nC) 500 600 5-6 APTC60TDUM35P – Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60TDUM35P APTC60TDUM35P Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 80 40 40 60 80 100 tr 20 0 20 0 120 0 20 ID, Drain Current (A) Switching Energy (mJ) Eon 100 120 6 Eoff Eon 4 2 0 40 60 80 100 ID, Drain Current (A) 120 ZCS ZVS 100 80 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C hard switching 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ =25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTC60TDUM35P – Rev 0 September, 2004 20 120 Frequency (kHz) VDS=400V ID=72A T J=125°C L=100µH 8 I DR, Reverse Drain Current (A) Switching Energy (mJ) Eoff Operating Frequency vs Drain Current 20 80 Switching Energy vs Gate Resistance 140 40 60 10 VDS=400V RG=2.5Ω TJ=125°C L=100µH 0 60 40 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 tf 60 td(on) 0 VDS=400V RG=2.5Ω T J=125°C L=100µH 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120