Vishay BAT54S-GS18 Small signal schottky diodes, single dual Datasheet

BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
BAT54
BAT54A
3
3
Mechanical Data
Top View
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
1
1
2
2
BAT54C
BAT54S
3
3
Top View
1
2
1
2
18034
Parts Table
Part
Ordering code
Marking
Remarks
BAT54
BAT54-GS18 or BAT54-GS08
L4
Tape and Reel
BAT54A
BAT54A-GS18 or BAT54A-GS08
L42
Tape and Reel
BAT54C
BAT54C-GS18 or BAT54C-GS08
L43
Tape and Reel
BAT54S
BAT54S-GS18 or BAT54S-GS08
L44
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Unit
30
V
IFRM
tp < 1 s
Power dissipation
1)
Value
VRRM
IF
Repetitive peak forward current
Surge forward current current
Symbol
IFSM
Ptot
200
1)
mA
300
1)
mA
600
1)
230
mA
mW
Device on fiberglass substrate, see layout on next page.
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
1
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
4301)
°C/W
Tj = Tstg
- 65 to + 150
°C
TS
- 65 to + 150
°C
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
1)
Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Max
Unit
IR
2
µA
VF
240
mV
IF = 1 mA, tp < 300 µs, δ < 2 %
VF
320
mV
IF = 10 mA, tp < 300 µs, δ < 2 %
VF
400
mV
IF = 30 mA, tp < 300 µs, δ < 2 %
VF
500
mV
Reverse Breakdown voltage
IR = 100 µA pulses
Leakage current
Pulse test tp < 300 µs, δ < 2 % at
VR = 25 V
Forward voltage
IF = 0.1 mA, tp < 300 µs, δ < 2 %
Symbol
Min
V(BR)
30
Typ.
V
IF = 100 mA, tp < 300 µs, δ < 2 %
VF
1000
mV
Diode capacitance
VR = 1 V, f = 1 MHz
Ctot
10
pF
Reverse recovery time
IF = 10 mA through IR = 10 mA
to Irr = 1mA, RL = 100 Ω
trr
5
ns
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
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17451
Document Number 85508
Rev. 1.6, 24-Nov-04
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
TJ = 125°C
IF in mA
100
ˇ
ˇ
TJ = -40°
C
10
TJ = 25̌°C
1
0.1
0.01
0
0.2
0.4
0.6 0.8
VF in V
18025
1.0
1.2 1.4
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
14
12
Cin pF
10
8
6
4
2
0
0
16
12
VR in V
8
4
18026
20
24
28
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
1000
I R in µA
100
TJ = 125°ˇC
TJ = 100°ˇC
10
TJ = 75°ˇC
1
TJ = 50ˇ°C
0.1
TJ = 25°̌C
0.01
0
5
18027
10
15
VR in V
20
25
30
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
3
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.95 (.037)
1.15 (.045)
Package Dimensions in mm (Inches)
2.6 (.102)
2.35 (.092)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.52 (0.020)
0.4 (.016)
3
1
0.95 (.037)
1.20(.047)
1.43 (.056)
0.9 (0.035)
2.0 (0.079)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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Document Number 85508
Rev. 1.6, 24-Nov-04
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
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