CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can Package Type : 3x4 DFN PN: CGHV1F0 06S operate below 40V to as low as 20V VDD, maintaining high gain and efficiency. Typical Performance 5.5-6.5 GHz (TC = 25˚C) , 40 V Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain 15.4 16.5 17.8 dB Output Power @ PIN = 28 dBm 38.6 39.3 39.0 dBm 55 57 52 % Drain Efficiency @ PIN = 28 dBm Note: Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty. ary Rev 2.2 – Janu 2016 Features for 40 V in CGHV1F006S-AMP • Up to 18 GHz Operation • 8 W Typical Output Power • 17 dB Gain at 6.0 GHz • 15 dB Gain at 9.0 GHz • Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz. • High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV1F006S-AMP1 5.85 - 7.2 GHz Class A/B 40 V CGHV1F006S-AMP2 7.9 - 8.4 GHz Class A/B 40 V CGHV1F006S-AMP3 8.5 - 9.6 GHz Class A/B 40 V CGHV1F006S-AMP4 4.9 - 5.9 GHz Class A/B 20 V Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage VDSS 100 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature ˚C TSTG -65, +150 Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 1.2 mA 25˚C Maximum Drain Current IDMAX 0.95 A 25˚C Soldering Temperature2 TS 245 ˚C TC -40, +150 ˚C RθJC 14.5 ˚C/W 1 Case Operating Temperature3,4 Thermal Resistance, Junction to Case 5 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 Simulated at PDISS = 2.4 W 4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. 5 The RTH for Cree’s application circuit, CGHV1F006S-AMP, with 31 (Ø11 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9°C/W. The total RTH from the heat sink to the junction is 14.5°C/W + 3.9°C/W = 18.4°C/W. Electrical Characteristics (TC = 25˚C) - 40 V Typical Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.6 -3.0 -2.4 VDC VDS = 10 V, ID = 1.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 40 V, ID = 60 mA Saturated Drain Current2 IDS – -1.0 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 100 – – VDC VGS = -8 V, ID = 1.2 mA DC Characteristics1 Drain-Source Breakdown Voltage RF Characteristics3 (TC = 25˚C, F0 = 6.0 GHz unless otherwise noted) Gain G – 16 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm POUT – 38.5 – dBm VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm η – 55 - % VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm Input Capacitance5 CGS – 1.3 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 0.31 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.04 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Output Power4 Drain Efficiency4 Output Mismatch Stress4 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV1F006S-AMP 4 Pulsed 100 µs, 10% duty cycle 5 Includes package Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV1F006S-AMP1 at C-Band Under OQPSK Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F0 = 5.8 - 7.2 GHz unless otherwise noted) Gain G – 17.5 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm POUT – 39 – dBm VDD = 40 V, IDQ = 60 mA, PIN = 27 dBm η – 55 - % VDD = 40 V, IDQ = 60 mA, PIN = 27 dBm OQPSK3 ACLR - -36 - dBc VDD = 40 V, IDQ = 60 mA, POUT = 33 dBm Output Mismatch Stress2 VSWR – 10 : 1 – Y Output Power2 Drain Efficiency2 No damage at all phase angles, VDS = 40 V, Vgs = -8 V, PIN = 27 dBm Notes: 1 Measured in CGHV1F006S-AMP1 Application Circuit 2 Pulsed 100 µs, 10% duty cycle 3 OQPSK modulated signal, 1.6 msps, PN23, Alpha Filter = 0.2 Offset = 1.6 MHz Typical Performance - CGHV1F006S-AMP1 at C-Band Under OQPSK Figure 1. - Typical Small Signal Response of CGHV1F006S-AMP1 Application Circuit VDD = 40 V, IDQ = 60 mA 30 20 Magnitude (dB) 10 0 -10 -20 S11 S21 S22 -30 5.0 5.5 6.0 6.5 Frequency (GHz) 7.0 7.5 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV1F006S Rev 2.2 8.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F006S-AMP1 Figure 2. - Typical Gain, Efficiency and OQPSK Performance vs Frequency POUT = 33 dBm. VDDPerformance = 40 V, IDQ =at60 mA CGHV1F006S OQPSK 33dBm 40 0 Efficiency Gain (dB) and Efficiency (%) -5 Efficiency Efficiency Offset 30 -10 25 -15 20 -20 Gain Gain 15 -25 10 -30 OQPSK Offset (dBc) Gain 35 Offset Offset 5 0 -35 5.8 6.0 6.2 6.4 6.6 Frequency (GHz) 6.8 7.0 7.2 -40 CGHV1F006S OQPSK Transfer @ 7.2GHz Figure 3. - Typical Gain, Efficiency and OQPSK Performance vs Input Power OQPSK Transfer Frequency = 7.2 GHz, VDD = 40 V, IDQ = 60 mA 35 -15 DEff 30 -20 Gain_ -Oset_ -25 +Oset_ Efficiency 20 -30 Gain 15 -35 10 -40 Oset 5 0 OQPSK Offset (dBc) Gain (dB) Efficiency (%) 25 -45 10 15 20 25 30 35 -50 Input Power (dBm) Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F006S-AMP1 40.0 75 39.5 70 39.0 65 38.5 60 38.0 55 37.5 50 37.0 45 Drain Efficiency (%) Output Power (dBm) Figure 4. - Typical Pulsed Power Response VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 27 dBm Output Power 36.5 36.0 5.70 Drain Efficiency 5.90 6.10 6.30 6.50 6.70 6.90 7.10 40 35 7.30 Frequency (GHz) CGHV1F006S-AMP1 Application Circuit Bill of Materials, OQPSK Designator Description CGHV1F006S-AMP1 Application Circuit Qty R1 RES, 15, OHM, +1/-1%, 1/16 W, 0402 1 R2 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1 C1, C14 CAP, 1.8 pF, ±0.1 pF, 0402, ATC 2 C2 CAP, 2.0 pF, ±0.1 pF, 0402, ATC 1 C3, C8 CAP, 1.5 pF, ±0.1 pF, 0402, ATC 2 CAP, 10 pF, ±5%, 0603, ATC 1 C5, C10 CAP, 470 pF, 5%, 100 V, 0603, X 2 C6, C11 CAP, 33000 pF, 0805, 100V, X7R 2 C7 CAP, 10 UF, 16 V, TANTALUM 1 C4 C9 CAP, 20 pF, ±5%, 0603, ATC 1 C12 CAP, 1.0 UF, 100V, 10% X7R, 1210 1 C13 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 PCB, RT5880, 0.020” THK, CGHV1F006S 1 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 QFN TRANSISTOR CGHV1F006S 1 J1, J2 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F006S-AMP1 Application Circuit Schematic, OQPSK Vg=-2.0V to -3.5V typ GND Vd=+40V 5 C7 10 C6 0.033 C5 470 pF C4 10 pF R2 100 Ohm C1 1.8 pF 4 3 2 1 J3 C8 C9 C11 C10 1.5 pF 20 pF 470 pF 0.033 C3 1.5 pF C12 1 C13 33 C14 1.8 pF R1 15 Ohm Q1 2 J2 1 J1 C2 2.0 pF 3 CGHV1F006S-AMP1 Application Circuit Outline, OQPSK Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV1F006S-AMP2 at X-Band, SATCOM Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F0 = 7.9 - 8.4 GHz unless otherwise noted) Gain G – 15 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm POUT – 39 – dBm VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm η – 55 - % VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm OQPSK3 ACLR - -37 - dBc Output Mismatch Stress2 VSWR – 10 : 1 – Y Output Power2 Drain Efficiency2 VDD = 40 V, IDQ = 60 mA, POUT = 33 dBm No damage at all phase angles, VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm Notes: 1 Measured in CGHV1F006S-AMP2 Application Circuit 2 Pulsed 100 µs, 10% duty cycle 3 OQPSK modulated signal, 1.6 msps, PN23, Alpha Filter = 0.2 Offset = 1.6 MHz Typical Performance in Application Circuit CGHV1F006S-AMP2 at X-Band, SATCOM Figure 5. - Typical Small Signal Response of CGHV1F006S-AMP2 Application Circuit VDD = 40 V, IDQ = 60 mA 30 20 Magnitude (dB) 10 0 -10 S21 -20 S11 S22 -30 7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 Frequency (GHz) Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F006S-AMP2 Figure 6. - Typical OQPSK Response VDD = 40 V, IDQ = 60 mA, 1.6 MSPS, POUT = 33 dBm 40 -30 35 -31 POUT 30 -32 Gain 25 -33 Drain Efficiency 20 -34 ACLR Gain 15 ACLR (dBc) Gain (dB) & Drain Efficiency (%) Drain Efficiency -35 10 -36 ACLR 5 -37 0 7.90 7.95 8.00 8.05 8.10 8.15 8.20 8.25 8.30 8.35 -38 8.40 Frequency (GHz) Typical Performance in Application Circuit CGHV1F006S-AMP2 35 Figure 7. - OQPSK Transfer Response VDD = 40 V, IDQ = 60 mA, 1.6 MSPS, Frequency = 8.4 GHz -10 Gain 30 -15 Eff +Oset -20 20 -25 15 -30 10 -35 5 -40 0 15 20 25 30 Output Power (dBm) 35 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV1F006S Rev 2.2 40 OQPSK Offset (dBc) Gain (dB) and Drain Efficiency (%) -Oset 25 -45 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F006S-AMP2 Figure 8. - Typical Pulsed Power Response VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 28 dBm 40.0 75 Output Power 39.5 70 65 38.5 38.0 55 37.5 50 37.0 45 Output Power 36.5 36.0 7.80 Drain Efficiency 7.90 8.00 8.10 8.20 Frequency (GHz) CGHV1F006S-AMP2 Application Circuit Bill of Materials, SATCOM Designator Description RES, 15, OHM, +1/-1%, 1/16 W, 0402 1 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1 CAP, 1.0 pF, ±0.05 pF, 0402, ATC 3 CAP, 10 pF, ±5%, 0603, ATC 2 CAP, 10pF, ±5%, 0603, X 1 C5,C10 CAP, 470pF, 5%, 100V, 0603, X 2 C6, C11 C4 CAP, 33000 pF, 0805, 100V, X7R 2 C7 CAP, 10 UF, 16 V, TANTALUM 1 C9 CAP, 20 pF, ±5%, 0603, ATC 1 C12 CAP, 1.0 UF, 100V, 10% X7R, 1210 1 C13 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 QFN TRANSISTOR CGHV1F006S 1 J1, J2 8.40 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV1F006S Rev 2.2 35 8.50 Qty R2 C1, C14 8.30 40 CGHV1F006S-AMP2 Application Circuit R1 C2, C3, C8 60 Drain Efficiency Drain Efficiency (%) Output Power (dBm) 39.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F006S-AMP2 Application Circuit Schematic, SATCOM Vg=-2.0V to -3.5V typ GND Vd=+40V 5 C7 10 C6 0.033 C5 470 pF C4 10 pF R2 100 Ohm 4 3 2 1 J3 C8 C9 C11 C10 1.0 pF 20 pF 470 pF 0.033 C3 1.0 pF C13 33 C14 1.0 pF R1 15 Ohm C1 1.0 pF C12 1 Q1 2 J2 1 J1 C2 1.0 pF 3 CGHV1F006S-AMP2 Application Circuit Outline, SATCOM Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV1F006S-AMP3 at X-Band, RADAR Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F0 = 8.5 - 9.6 GHz unless otherwise noted) Gain Output Power2 Drain Efficiency2 Output Mismatch Stress2 G – 14.5 - dB VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm POUT – 38.5 – dBm VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm η – 52 - % VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm VSWR – 10 : 1 – Y VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm Notes: 1 Measured in CGHV1F006S-AMP3 Application Circuit 2 Pulsed 100 µs, 10% duty cycle Typical Performance in Application Circuit CGHV1F006S-AMP3 at X-Band, RADAR Figure 9. - Typical Small Signal Response VDD = 40 V, IDQ = 60 mA 30 20 Magnitude (dB) 10 0 -10 -20 S21 S11 S22 -30 7.5 8.0 8.5 9.0 Frequency (GHz) 9.5 10.0 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV1F006S Rev 2.2 10.5 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F006S-AMP3 Figure 10. - Typical Pulsed Power Response VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 28 dBm 40.0 75 39.5 70 65 Output Power 38.5 60 38.0 55 Drain Efficiency 37.5 50 37.0 45 36.5 Drain Efficiency (%) Output Power (dBm) 39.0 40 Output Power Drain Efficiency 36.0 8.4 8.6 8.8 9.0 Frequency (GHz) CGHV1F006S-AMP3 Application Circuit Bill of Materials, RADAR 9.2 9.4 9.6 35 CGHV1F006S-AMP3 Application Circuit Designator Description Qty R1 RES, 15, OHM, +1/-1%, 1/16 W, 0402 1 R2 RES, 100, OHM, +1/-1%, 1/16 W, 0603 1 C1, C14 CAP, 1.0 pF, ±0.05 pF, 0603, ATC 2 C2 CAP, 1.0 pF, ±0.05 pF, 0402, ATC 1 C3, C8 CAP, 0.8 pF, ±0.05 pF, 0402, ATC 2 CAP, 10 pF, ±5%, 0603, ATC 1 C5, C10 CAP, 470 pF, 5%, 100 V, 0603, X 2 C6, C11 C4 CAP, 33000 pF, 0805, 100V, X7R 2 C7 CAP, 10 UF, 16 V, TANTALUM 1 C9 CAP, 20 pF, ±5%, 0603, ATC 1 C12 CAP, 1.0 UF, 100V, 10% X7R, 1210 1 C13 CAP, 33 UF, 20%, G CASE 1 J1, J2 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 QFN TRANSISTOR CGHV1F006S 1 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F006S-AMP3 Application Circuit Schematic, RADAR Vg=-2.0V to -3.5V typ GND Vd=+40V 5 C7 10 C6 0.033 C5 470 pF C4 10 pF R2 100 Ohm C1 1.0 pF 4 3 2 1 J3 C8 C9 C11 C10 0.8 pF 20 pF 470 pF 0.033 C3 0.8 pF C12 1 C13 33 C14 1.0 pF R1 15 Ohm Q1 2 J2 1 J1 C2 1.0 pF 3 CGHV1F006S-AMP3 Application Circuit Outline, RADAR Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV1F006S-AMP4 at 802.11 Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F0 = 4.9 - 5.9 GHz unless otherwise noted) Gain G – 13 - dB VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm Drain Efficiency2 η – 27 - % VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm OQPSK3 ACLR - -43 - dBc VDD = 20 V, IDQ = 30 mA, POUT = 27 dBm Output Mismatch Stress2 VSWR – 10 : 1 – Y No damage at all phase angles, VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm Notes: 1 Measured in CGHV1F006S-AMP4 Application Circuit 2 Single carrier WCDMA, 3GPP Test Model 1, G4 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% probability on CCDF Typical Performance - CGHV1F006S-AMP4 at 802.11 Figure 11. - Typical Small Signal Response VDD = 20 V, IDQ = 30 mA 30 20 Magnitude (dB) 10 0 -10 -20 S11 S21 S22 -30 4.0 4.5 5.0 5.5 Frequency (GHz) 6.0 6.5 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGHV1F006S Rev 2.2 7.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV1F006S-AMP4 Figure 12. - Typical Gain, Efficiency and WCDMA Performance vs Frequency VDD = 20 V, IDQ = 30 mA, POUT = 27 dBm 40 -37 Gain 35 -38 Drain Efficiency Drain Efficiency ACLR -39 25 -40 20 -41 ACLR 15 -42 Gain 10 -43 5 -44 0 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 ACLR (dBc) Gain (dB) & Drain Efficiency (%) 30 -45 Frequency (GHz) CGHV1F006S-AMP4 Application Circuit Bill of Materials at 802.11 Designator R1, R3 R2 Description CGHV1F006S-AMP4 Application Circuit Qty RES, 1, OHM, +/-1%, 1/16 W, 0402 2 RES, 51.1, OHM, +/-1%, 1/16W, 0603 1 C2, C6, C11 CAP, 1.8 pF, +/-0.1 pF, 0603, ATC 3 C1 CAP, 0.2 pF, +/-0.05 pF, 0402, ATC 1 C3, C7, C12 CAP, 470 pF, 5%, 100 V, 0603, X 3 C4, C8, C13 CAP, 33000 pF, 0805, 100 V, X7R 3 C5 CAP, 10 UF, 16 V, TANTALUM 1 C15 CAP, 6.8 pF, ±0.25 pF, 100 V, 0603 1 C9, C14 CAP, 1.0 UF, 100V, 10% X7R, 1210 2 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 PCB, RT5880, 0.020” THK, CGHV1F006S 1 BASEPLATE, CGH35015, 2.60 X 1.7 1 HEADER RT>PLZ .1CEN LK 5POS 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 QFN TRANSISTOR CGHV1F006S 1 C10 J1, J2 J3 Q1 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F006S-AMP4 Application Circuit Schematic Efficiency Gain Offset CGHV1F006S-AMP4 Application Circuit Outline Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 16 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV1F006S Power Dissipation De-rating Curve Figure 13. - CGHV1F006S Transient Power Dissipation De-Rating Curve 12 10 Power Dissipation (W) 8 Note 1 6 4 2 0 0 25 50 75 100 125 150 175 200 225 250 Maximum CaseTemperature ( C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 17 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (GHz) Z Source Z Load 1 49.67 + j32.81 184.11 + j6.66 3 11.54 + j3.96 38.83 + j56.37 6 5.94 - j17.97 13.03 + j16.16 10 11.87 - j77.62 11.79 - j17.43 12 47.42 - j205.35 16.39 - j46.22 15 33.78 + j251.03 163.61 - j268.44 Note1: VDD = 40 V, IDQ = 60 mA Note2: Impedances are extracted from source and load pull data derived from the transistor. Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 18 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV1F006S (Package 3 x 4 DFN) Pin Input/Output 1 GND 2 NC 3 RF IN 4 RF IN 5 NC 6 GND 7 GND 8 NC 9 RF OUT 10 RF OUT 11 NC 12 GND Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer. Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 19 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV1F006S Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Value Units 15.0 GHz 6 W Surface Mount - Power Output Package Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 20 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV1F006S GaN HEMT Each CGHV1F006S-AMP1 Test board with GaN HEMT installed, 5.85 - 7.2 GHz, 50 V C-Band under OQPSK Each CGHV1F006S-AMP2 Test board with GaN HEMT installed, 7.9 - 8.4 GHz, 28 V X-Band SATCOM Each CGHV1F006S-AMP3 Test board with GaN HEMT installed, 8.5 - 9.6 GHz, 28 V X-Band RADAR Each CGHV1F006S-AMP4 Test board with GaN HEMT installed, 4.9 - 5.9 GHz, 50 V 802.11 Each CGHV1F006S-TR Delivered in Tape and Reel 250 parts / reel Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 21 CGHV1F006S Rev 2.2 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.313.5639 Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 22 CGHV1F006S Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf