DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits ID RDS(on) max TA = +25°C 220mΩ @ VGS = 10V 2.24A 250mΩ @ VGS = 4.5V 2.10A 100V This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) Applications Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description DC-DC Converters Power Management Functions Backlighting TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN10H220LVT-7 DMN10H220LVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 220 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN10H220LVT Document number: DS37958 Rev. 2 - 2 Mar 3 YM ADVANCE INFORMATION Product Summary 2017 E Apr 4 220 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D April 2015 © Diodes Incorporated DMN10H220LVT Maximum Ratings (@TA = +25°C unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage (Note 6) Continuous Drain Current (Note 5) VGS = 10V (Note 5) TA = +25C TA = +70C TA = +25C TA = +70C Value 100 16 2.24 1.79 ID A 1.87 1.50 1.50 6.60 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C (Note 6) (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient PD RθJA Operating and Storage Temperature Range Electrical Characteristics Value 1.67 1.07 75 108 -55 to +150 TJ, TSTG Units W °C/W °C (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 100V, VGS = 0V VGS = 16V, VDS = 0V VGS(th) 1 RDS (ON) — VSD — 2.5 220 250 1.2 V Static Drain-Source On-Resistance 1.8 172 211 0.77 VDS = VGS, ID = 250μA VGS = 10V, ID = 1.6A VGS = 4.5V, ID = 1.3A VGS = 0V, IS = 1.1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 401 22 17 2.1 4.1 8.3 1.5 2 6.8 8.2 7.9 3.6 17 9.8 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 25V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 50V, ID = 1.6A ns VDS = 50V, VGS = 4.5V, RG = 6.8ΩID = 1A ns nC IF = 1.1A, di/dt =100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN10H220LVT Document number: DS37958 Rev. 2 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H220LVT 10.0 10 9.0 9 VDS = 10V VGS = 6.0V 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10V 7.0 7 VGS = 9.0V VGS = 5.0V VGS = 8.0V 6.0 6 VGS = 4.5V 5.0 TA = 125°C 4 VGS = 4.0V 3.0 TA = 85°C 3 TA = 25°C 2.0 2 1.0 VGS = 3.5V 0 0.5 1 1.5 2 2.5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 3 0.35 0.3 VGS = 4.5V 0.2 0.15 VGS = 10V 0.1 0.05 0 0 1 2 3 4 5 6 7 8 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.4 0.25 TA = -55°C 1 0.0 10 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics ID = 200mA ID = 100mA 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 3 0.70 VGS = 4.5V 0.60 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 150°C 5 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 8.0 0.50 0.40 TA = 150°C 0.30 TA = 125°C TA = 85°C 0.20 TA = 25°C 0.10 2.5 VGS = 10 V ID = 10A 2 1.5 VGS = 4.5V ID = 5A 1 0.5 TA = -55°C 0 -50 0.00 0 1 2 3 4 5 6 7 8 9 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN10H220LVT Document number: DS37958 Rev. 2 - 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 10 3 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H220LVT 2.5 VGS(th), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.4 0.3 VGS = 4.5V ID = 5A 0.2 VGS = 10 V ID = 10A 0.1 ID = 1mA 1.9 ID = 250µA 1.6 1.3 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 1000 10 CT, JUNCTION CAPACITANCE (pF) 9 8 IS, SOURCE CURRENT (A) 2.2 1 -50 0 -50 7 6 TA = 150°C 5 4 TA = 85°C 3 C iss 100 TA = 125°C TA = 25°C 2 C oss TA = -55°C 1 C rss f = 1MHz 10 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance R DS(on) Limited 8 6 4 1 DC PW = 10s PW = 1s 0.1 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN10H220LVT Document number: DS37958 Rev. 2 - 2 10 PW = 100ms PW = 10ms 0.01 2 0 40 10 VDS = 50V ID = 1.6A ID , DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION 0.5 0.001 0.1 TJ(m ax) = 150°C PW = 1ms PW = 100µs TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 4 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H220LVT r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Rthja = 109°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMN10H220LVT Document number: DS37958 Rev. 2 - 2 5 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H220LVT Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TSOT26 Dim Min Max Typ A — 1.00 — A1 0.01 0.10 — A2 0.84 0.90 — D — — 2.90 E — — 2.80 E1 — — 1.60 b 0.30 0.45 — c 0.12 0.20 — e — — 0.95 e1 — — 1.90 L 0.30 0.50 — L2 — — 0.25 θ 0° 8° 4° θ1 4° 12° — All Dimensions in mm D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Y1 Y (6x) Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 X (6x) DMN10H220LVT Document number: DS37958 Rev. 2 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H220LVT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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