HOTTECH BC847C Plastic-encapsulate transistor Datasheet

Plastic-Encapsulate Transistors
FEATURES
BC846A/B (NPN)
BC847A/B/C (NPN)
BC848A/B/C (NPN)
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Marking
BC846A
BC846B
1A
1B
BC847C
BC848A
1G
1J
BC847A
1E
BC848B
1K
BC847B
1F
BC848C
1. BASE
1L
2. EMITTER
SOT-23
3. COLLECTO
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
V
BC846
VCBO
80
BC847
VCBO
50
BC848
VCBO
30
BC846
VCEO
65
BC847
VCEO
45
BC848
VCEO
30
VEBO
6
V
Collector Current -Continuous
IC
-0.1
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to +150
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
V
Page:P3-P1
Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Test conditions
BC846
BC847
IC= 10µA, IE=0
Collector cut-off current
30
VCEO
VEBO
BC846
BC847
ICBO
BC848
Collector cut-off current
BC846
BC847
ICEO
BC848
IEBO
Emitter cut-off current
DC current gain
IC= 10mA, IB=0
V
45
IE= 10µA, IC=0
VCB=70 V ,
IE=0
VCB=50 V ,
IE=0
VCB=30 V ,
IE=0
VCE=60 V ,
IB=0
VCE=45 V ,
IB=0
VCE=30 V ,
VEB=5 V ,
hFE
VCE= 5V,
30
V
6
V
IB=0
IC=0
BC846A,847A,848A
BC846B,847B,848B
Unit
65
BC848
Emitter-base breakdown voltage
Max
50
BC846
BC847
Typ
80
VCBO
BC848
Collector-emitter breakdown voltage
Min
IC= 2mA
BC847C,BC848C
0.1
μA
0.1
μA
0.1
μA
110
220
200
450
420
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 5mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
1.1
V
fT
Transition frequency
f=100MHz
Collector output capacitance
BC846A/B
BC847A/B/C
BC848A/B/C
VCE= 5 V, IC= 10mA
Cob
VCB=10V,f=1MHz
100
MHz
4.5
pF
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P2
Plastic-Encapsulate Transistors
BC846A/B
BC847A/B/C
BC848A/B/C
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P3
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