DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary (Typ @VGS = -4.5V, TA = +25°C) Features and Benefits BVDSS RDS(ON) Qg Qgd ID -12V 65mΩ 9nC 2.4nC -3.2A Built-in G-S Protection Diode against ESD 2kV HBM Ultra Small 0.8mm x 0.8mm Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a High performance MOSFET in ultra-small 0.8mm x0.8mm package. Case: X2-WLB0808-4 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram UBM Opening: 203m Portable Applications Load Switch Power Management Functions ESD PROTECTED Top View Ordering Information (Note 4) Part Number DMP1100UCB4-7 Notes: Case X2-WLB0808-4 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 9W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D April 2016 © Diodes Incorporated DMP1100UCB4 Maximum Ratings Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TA = +25°C TA = +70°C Continuous Source Current @ VGS = -4.5V (Note 5) Continuous Source Current @ VGS = -4.5V (Note 6) ID Unit V V A -3.2 -2.6 -13 -1.2 ID Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) Continuous Source-Drain Diode Current NEW PRODUCT Value -12 8 -2.5 -2.0 IDM IS A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 0.67 187 1.1 117 -55 to +150 Unit W °C/W W °C/W °C . Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Body Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -12 - - 1 10 V µA µA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) -0.35 -0.55 -0.8 V RDS(ON) - 65 80 90 115 135 150 83 96 150 170 300 400 m |Yfs| VSD - 6.5 -0.7 - S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = -1.4V, ID = -1A VGS = -1.3V, ID = -1A VDS = -4V, IS = -1.5A VGS = 0V, IS = -1.5A, Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 680 220 205 11.2 9.0 1.0 2.6 4.4 10.1 22 20 820 290 280 17 14 9 33 - pF pF pF nC nC nC ns ns ns ns VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDS = -6V, ID = -2A VDD = -4V, ID = -2A VGEN = -4.5V, Rg = 1Ω, RL = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP1100UCB4 VDS = -5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 VGS = -2.0V VGS = -2.5V VGS = -3.0V VGS = -4.5V 8.0 VGS = -8.0V 6.0 VGS = -1.5V 4.0 VGS = -1.2V 2.0 8 6 4 125℃ 2 85℃ 25℃ -55℃ 150℃ VGS = -1.0V 0 0.0 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0 3 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) 0.2 VGS = -1.5V 0.15 0.1 VGS = -3.6V VGS =-2.5V VGS = -4.5V 0.05 0 2 4 6 8 ID, DRAIN-SOURCE CURRENT (A) 0.1 VGS=-4.5V 0.09 150℃ 0.08 125℃ 85℃ 0.07 25℃ 0.06 -55℃ 0.05 0.04 1 10 VGS = -2.5V, ID = -2.0A VGS = -4.5V, ID = -3.0A 1.2 1.1 VGS = -1.5V, ID = -1A 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 RDS(ON), DRAIN-SOURCE ON-ESISTANCE () 1.4 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Junction Temperature DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Junction Temperature Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1.3 2 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 10.0 3 of 7 www.diodes.com 0.2 0.18 VGS = -1.3V, ID =-1.0A 0.16 VGS = -1.4V, ID =-1.0A 0.14 0.12 VGS = -1.5V, ID =-1.0A 0.1 0.08 0.06 VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.0A 0.04 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature April 2016 © Diodes Incorporated 10 VGS = 0V 0.7 ID = -1mA Is, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.8 0.6 ID = -250μA 0.5 0.4 0.3 8 6 4 TJ = 85oC TJ = 125oC 2 TJ = 25oC TJ = 150oC TJ = -55oC 0 0.2 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 0 150 Figure 7. Gate Threshold Variation vs. Junction Temperature 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 10000 8 6 Ciss 1000 VDS = -6V, ID = -2.0A VGS (V) CT, JUNCTION CAPACITANCE (pF) f=1MHz Coss Crss 100 4 2 10 0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance 12 0 9 400 P(pk), PEAK TRANSIENT POWER (W) PW =100µs 10 1 PW =1ms 0.01 6 PW =10ms PW =100ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= -3.6V 0.1 PW =1s PW =10s DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Document number: DS38339 Rev. 2 - 2 15 Single Pulse RθJA = 187℃/W RθJA (t)=RθJA * r(t) TJ-TA=P * RθJA (t) 300 200 100 0 1E-050.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 11. SOA, Safe Operation Area DMP1100UCB4 12 Figure 10. Gate Charge RDS(ON) Limited 0.1 3 Qg (nC) 100 ID, DRAIN CURRENT (A) NEW PRODUCT DMP1100UCB4 Figure 12. Single Pulse Maximum Power Dissipation 4 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP1100UCB4 D=0.7 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 187℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 5 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP1100UCB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-WLB0808-4 NEW PRODUCT D e Ø b (4x) X2-WLB0808-4 e E Pin1 Dim Min A -- A2 -- Max Typ 0.375 0.350 -- 0.200 b 0.1971 0.2409 0.219 D 0.780 0.810 0.800 E 0.780 0.810 0.800 e -- -- 0.400 All Dimensions in mm A2 A Seating Plane Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-WLB0808-4 Ø D (4x) C Dimensions C D Value (in mm) 0.400 0.219 C DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 6 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP1100UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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