AP94T07GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
75V
RDS(ON)
8mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
75A
S
Description
AP94T07 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP94T07GJ) are available for low-profile
applications.
G
D
TO-251(J)
S
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@Tc=25℃
Drain Current, VGS @ 10V
ID@Tc=100℃
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@Tc=25℃
Total Power Dissipation
4
Rating
Units
75
V
+20
V
75
A
58
A
300
A
125
W
2.4
W
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
4
Value
Units
1.2
℃/W
62.5
℃/W
110
℃/W
1
201501273
AP94T07GH/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
75
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=40A
-
58
92
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=60V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
29
-
nC
2
td(on)
Turn-on Delay Time
VDS=40V
-
13
-
ns
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
26
-
ns
tf
Fall Time
VGS=10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
2350 3760
pF
Coss
Output Capacitance
VDS=25V
-
390
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
245
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
83
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A.
2
4.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP94T07GH/J-HF
250
160
ID , Drain Current (A)
200
ID , Drain Current (A)
120
10V
9.0V
8.0V
7.0V
80
V G =6.0V
T C =175 o C
10V
9.0V
8.0V
o
T C =25 C
7.0V
150
100
V G = 6.0V
40
50
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0.0
2.0
V DS , Drain-to-Source Voltage (V)
4.0
6.0
8.0
10.0
12.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =40A
V G =10V
Normalized RDS(ON)
2.4
Normalized BVDSS
1.1
1
2.0
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
200
-50
0
o
Fig 3. Normalized BVDSS v.s. Junction
100
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
40
1.6
30
1.2
o
T j =175 C
Normalized VGS(th)
IS(A)
50
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP94T07GH/J-HF
f=1.0MHz
12
4000
I D =40A
3000
V DS =40V
V DS =45V
V DS =60V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
Operation in this area
limited by RDS(ON)
100
ID (A)
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP94T07GH/J-HF
MARKING INFORMATION
TO-251
94T07GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
94T07GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5