Cypress CY7C1471V25-133AXC 72-mbit (2 m x 36) flow-through sram with noblâ ¢ architecture Datasheet

CY7C1471V25
72-Mbit (2 M × 36) Flow-Through SRAM
with NoBL™ Architecture
72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture
Features
Functional Description
■
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
■
Supports up to 133 MHz bus operations with zero wait states
■
Data is transferred on every clock
■
Pin compatible and functionally equivalent to ZBT™ devices
■
Internally self timed output buffer control to eliminate the need
to use OE
■
Registered inputs for flow through operation
■
Byte write capability
■
2.5 V I/O supply (VDDQ)
■
Fast clock-to-output times
❐ 6.5 ns (for 133-MHz device)
■
Clock enable (CEN) pin to enable clock and suspend operation
■
Synchronous self timed writes
■
Asynchronous output enable (OE)
■
CY7C1471V25 available in JEDEC-standard Pb-free 100-pin
TQFP
■
Three chip enables (CE1, CE2, CE3) for simple depth
expansion.
■
Automatic power-down feature available using ZZ mode or CE
deselect.
■
Burst capability – linear or interleaved burst order
■
Low standby power
The CY7C1471V25 are 2.5 V, 2 M × 36 synchronous flow
through burst SRAMs designed specifically to support unlimited
true back-to-back read or write operations without the insertion
of wait states. The CY7C1471V25 are equipped with the
advanced No Bus Latency (NoBL) logic required to enable
consecutive read or write operations with data transferred on
every clock cycle. This feature dramatically improves the
throughput of data through the SRAM, especially in systems that
require frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
clock enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by two or four byte write select
(BWX) and a write enable (WE) input. All writes are conducted
with on-chip synchronous self timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide easy bank selection
and output tristate control. To avoid bus contention, the output
drivers are synchronously tristated during the data portion of a
write sequence.
Selection Guide
Description
133 MHz
Unit
Maximum access time
6.5
ns
Maximum operating current
305
mA
Maximum CMOS standby current
120
mA
Errata: For information on silicon errata, see "Errata" on page 19. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 38-05287 Rev. *P
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 24, 2013
CY7C1471V25
Logic Block Diagram – CY7C1471V25
ADDRESS
REGISTER
A0, A1, A
A1
D1
A0
D0
MODE
CLK
CEN
C
CE
ADV/LD
C
BURST
LOGIC
Q1 A1'
A0'
Q0
WRITE ADDRESS
REGISTER
ADV/LD
BW A
BW B
BW C
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
BW D
WE
OE
CE1
CE2
CE3
ZZ
Document Number: 38-05287 Rev. *P
INPUT
REGISTER
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
DQs
DQP A
DQP B
DQP C
DQP D
E
E
READ LOGIC
SLEEP
CONTROL
Page 2 of 23
CY7C1471V25
Contents
Pin Configurations ........................................................... 4
Pin Definitions .................................................................. 5
Functional Overview ........................................................ 6
Single Read Accesses ................................................ 6
Burst Read Accesses .................................................. 6
Single Write Accesses ................................................. 6
Burst Write Accesses .................................................. 6
Sleep Mode ................................................................. 6
Interleaved Burst Address Table ................................. 7
Linear Burst Address Table ......................................... 7
ZZ Mode Electrical Characteristics .............................. 7
Truth Table ........................................................................ 8
Truth Table for Read/Write .............................................. 9
Maximum Ratings ........................................................... 10
Operating Range ............................................................. 10
Electrical Characteristics ............................................... 10
Capacitance .................................................................... 11
Thermal Resistance ........................................................ 11
AC Test Loads and Waveforms ..................................... 11
Switching Characteristics .............................................. 12
Document Number: 38-05287 Rev. *P
Switching Waveforms .................................................... 13
Ordering Information ...................................................... 16
Ordering Code Definitions ......................................... 16
Package Diagrams .......................................................... 17
Acronyms ........................................................................ 18
Document Conventions ................................................. 18
Units of Measure ....................................................... 18
Errata ............................................................................... 19
Part Numbers Affected .............................................. 19
Product Status ........................................................... 19
Ram9 Sync/NoBL ZZ Pin Issues Errata Summary .... 19
Document History Page ................................................. 20
Sales, Solutions, and Legal Information ...................... 23
Worldwide Sales and Design Support ....................... 23
Products .................................................................... 23
PSoC® Solutions ...................................................... 23
Cypress Developer Community ................................. 23
Technical Support ..................................................... 23
Page 3 of 23
CY7C1471V25
Pin Configurations
Figure 1. 100-pin TQFP (14 × 20 × 1.4 mm) pinout[1]
A
81
A
82
A
83
A
84
ADV/LD
85
OE
86
CEN
90
87
VSS
91
WE
VDD
92
88
CE3
93
CLK
BWA
94
89
BWC
96
BWB
BWD
97
95
CE2
98
A
CE1
41
42
43
44
45
46
47
48
49
50
A
A
A
A
A
A
A
A
A
A0
VDD
37
A1
40
36
A
VSS
35
39
34
A
NC/144M
33
A
38
32
A
NC/288M
31
BYTE D
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
BYTE C
DQPC
DQC
DQC
VDDQ
VSS
DQC
DQC
DQC
DQC
VSS
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSS
DQD
DQD
DQD
DQD
VSS
VDDQ
DQD
DQD
DQPD
99
100
A
CY7C1471V25
DQPB
DQB
DQB
VDDQ
VSS
DQB
DQB
DQB
DQB
VSS
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSS
DQA
DQA
DQA
DQA
VSS
VDDQ
DQA
DQA
DQPA
BYTE B
BYTE A
Note
1. Errata: The ZZ pin (Pin 64) needs to be externally connected to ground. For more information, see "Errata" on page 19.
Document Number: 38-05287 Rev. *P
Page 4 of 23
CY7C1471V25
Pin Definitions
Name
A0, A1, A
I/O
Description
InputAddress inputs used to select one of the address locations. Sampled at the rising edge of the CLK.
synchronous A[1:0] are fed to the two-bit burst counter.
BWA, BWB,
InputByte write inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising
BWC, BWD synchronous edge of CLK.
WE
InputWrite enable input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal
synchronous must be asserted LOW to initiate a write sequence.
ADV/LD
InputAdvance/load input. Used to advance the on-chip address counter or load a new address. When HIGH
synchronous (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be
loaded into the device for an access. After being deselected, ADV/LD must be driven LOW to load a
new address.
CLK
Inputclock
Clock input. Captures all synchronous inputs to the device. CLK is qualified with CEN. CLK is only
recognized if CEN is active LOW.
CE1
InputChip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2
synchronous and CE3 to select or deselect the device.
CE2
InputChip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1
synchronous and CE3 to select or deselect the device.
CE3
InputChip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1
synchronous and CE2 to select or deselect the device.
OE
InputOutput enable, asynchronous input, active LOW. Combined with the synchronous logic block inside
asynchronous the device to control the direction of the I/O pins. When LOW, the I/O pins are enabled to behave as
outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when emerging from a deselected state, when
the device has been deselected.
CEN
InputClock enable input, active LOW. When asserted LOW the clock signal is recognized by the SRAM.
synchronous When deasserted HIGH the clock signal is masked. Because deasserting CEN does not deselect the
device, CEN can be used to extend the previous cycle when required.
ZZ[2]
InputZZ “sleep” input. This active HIGH input places the device in a non-time-critical “sleep” condition with
asynchronous data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an
internal pull-down.
DQs
I/OBidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the
synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the
addresses presented during the previous clock rise of the read cycle. The direction of the pins is
controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX
are placed in a tristate condition.The outputs are automatically tristated during the data portion of a write
sequence, during the first clock when emerging from a deselected state, and when the device is
deselected, regardless of the state of OE.
DQPX
I/OBidirectional data parity I/O lines. Functionally, these signals are identical to DQs. During write
synchronous sequences, DQPX is controlled by BWX correspondingly.
MODE
Input strap pin Mode input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When
tied to VDD or left floating selects interleaved burst sequence.
VDD
Power supply Power supply inputs to the core of the device.
VDDQ
I/O power
supply
VSS
Ground
NC
–
Power supply for the I/O circuitry.
Ground for the device.
No connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address expansion
pins and are not internally connected to the die.
Note
2. Errata: The ZZ pin (Pin 64) needs to be externally connected to ground. For more information, see "Errata" on page 19.
Document Number: 38-05287 Rev. *P
Page 5 of 23
CY7C1471V25
Functional Overview
The CY7C1471V25 are synchronous flow through burst SRAMs
designed specifically to eliminate wait states during write-read
transitions. All synchronous inputs pass through input registers
controlled by the rising edge of the clock. The clock signal is
qualified with the clock enable input signal (CEN). If CEN is
HIGH, the clock signal is not recognized and all internal states
are maintained. All synchronous operations are qualified with
CEN. Maximum access delay from the clock rise (tCDV) is 6.5 ns
(133-MHz device).
Accesses are initiated by asserting all three chip enables (CE1,
CE2, CE3) active at the rising edge of the clock. If CEN is active
LOW and ADV/LD is asserted LOW, the address presented to
the device is latched. The access can either be a read or write
operation, depending on the status of the write enable (WE).
Byte write select (BWX) can be used to conduct byte write
operations.
Write operations are qualified by the WE. All writes are simplified
with on-chip synchronous self timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) simplify depth expansion. All
operations (reads, writes, and deselects) are pipelined. ADV/LD
must be driven LOW after the device is deselected to load a new
address for the next operation.
Single Read Accesses
A read access is initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are all asserted active, (3) WE is deasserted HIGH, and
(4) ADV/LD is asserted LOW. The address presented to the
address inputs is latched into the address register and presented
to the memory array and control logic. The control logic
determines that a read access is in progress and allows the
requested data to propagate to the output buffers. The data is
available within 6.5 ns (133-MHz device) provided OE is active
LOW. After the first clock of the read access, the output buffers
are controlled by OE and the internal control logic. OE must be
driven LOW to drive out the requested data. On the subsequent
clock, another operation (read/write/deselect) can be initiated.
When the SRAM is deselected at clock rise by one of the chip
enable signals, the output is tristated immediately.
Burst Read Accesses
The CY7C1471V25 has an on-chip burst counter that enables
the user the ability to supply a single address and conduct up to
four reads without reasserting the address inputs. ADV/LD must
be driven LOW to load a new address into the SRAM, as
described in the Single Read Accesses section. The sequence
of the burst counter is determined by the MODE input signal. A
LOW input on MODE selects a linear burst mode, a HIGH selects
an interleaved burst sequence. Both burst counters use A0 and
A1 in the burst sequence, and wraps around when incremented
sufficiently. A HIGH input on ADV/LD increments the internal
burst counter regardless of the state of chip enable inputs or WE.
WE is latched at the beginning of a burst cycle. Therefore, the
type of access (read or write) is maintained throughout the burst
sequence.
Document Number: 38-05287 Rev. *P
Single Write Accesses
Write accesses are initiated when these conditions are satisfied
at clock rise:
■
CEN is asserted LOW
■
CE1, CE2, and CE3 are all asserted active
■
WE is asserted LOW.
The address presented to the address bus is loaded into the
address register. The write signals are latched into the control
logic block. The data lines are automatically tristated regardless
of the state of the OE input signal. This allows the external logic
to present the data on DQs and DQPX.
On the next clock rise the data presented to DQs and DQPX (or
a subset for byte write operations, see "Truth Table for
Read/Write" on page 9 for details) inputs is latched into the
device and the write is complete. Additional accesses
(read/write/deselect) can be initiated on this cycle.
The data written during the write operation is controlled by BWX
signals. The CY7C1471V25 provide byte write capability that is
described in the "Truth Table for Read/Write" on page 9. The
input WE with the selected BWx input selectively writes to only
the desired bytes. Bytes not selected during a byte write
operation remain unaltered. A synchronous self timed write
mechanism is provided to simplify the write operations. Byte
write capability is included to greatly simplify read/modify/write
sequences, which can be reduced to simple byte write operations.
Because the CY7C1471V25 are common I/O devices, data must
not be driven into the device while the outputs are active. The OE
can be deasserted HIGH before presenting data to the DQs and
DQPX inputs. This tristates the output drivers. As a safety
precaution, DQs and DQPX are automatically tristated during the
data portion of a write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1471V25 have an on-chip burst counter that enables
the user to supply a single address and conduct up to four write
operations without reasserting the address inputs. ADV/LD must
be driven LOW to load the initial address, as described in the
Single Write Accesses section. When ADV/LD is driven HIGH on
the subsequent clock rise, the chip enables (CE1, CE2, and CE3)
and WE inputs are ignored and the burst counter is incremented.
The correct BWX inputs must be driven in each cycle of the burst
write, to write the correct bytes of data.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. The device
must be deselected before entering the “sleep” mode. CE1, CE2,
and CE3, must remain inactive for the duration of tZZREC after the
ZZ input returns LOW.
Page 6 of 23
CY7C1471V25
Interleaved Burst Address Table
Linear Burst Address Table
(MODE = Floating or VDD)
(MODE = GND)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
00
01
10
11
01
00
11
10
01
10
11
00
10
11
00
01
10
11
00
01
11
10
01
00
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD– 0.2 V
–
120
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2 V
–
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–
ns
tZZI
ZZ active to sleep current
This parameter is sampled
–
2tCYC
ns
tRZZI
ZZ inactive to exit sleep current
This parameter is sampled
0
–
ns
Document Number: 38-05287 Rev. *P
Page 7 of 23
CY7C1471V25
Truth Table
The truth table for CY7C1471V25 follows. [3, 4, 5, 6, 7, 8, 9]
Operation
Deselect cycle
Deselect cycle
Address Used CE1 CE2 CE3 ZZ ADV/LD WE BWX OE CEN CLK
None
H
X
X
L
L
X
X
X
L L->H
None
X
X
H
L
L
X
X
X
L
L->H
DQ
Tristate
Tristate
Deselect cycle
None
X
L
X
L
L
X
X
X
L
L->H
Tristate
Continue deselect cycle
None
X
X
X
L
H
X
X
X
L
L->H
Tristate
Read cycle (begin burst)
External
L
H
L
L
L
H
X
L
L
L->H Data out (Q)
Next
X
X
X
L
H
X
X
L
L
L->H Data out (Q)
External
L
H
L
L
L
H
X
H
L
L->H
Tristate
Next
X
X
X
L
H
X
X
H
L
L->H
Tristate
Read cycle (continue burst)
NOP/dummy read (begin burst)
Dummy read (continue burst)
Write cycle (begin burst)
External
L
H
L
L
L
L
L
X
L
L->H Data in (D)
Write cycle (continue burst)
Next
X
X
X
L
H
X
L
X
L
L->H Data in (D)
NOP/write abort (begin burst)
None
L
H
L
L
L
L
H
X
L
L->H
Tristate
Write abort (continue burst)
Next
X
X
X
L
H
X
H
X
L
L->H
Tristate
Ignore clock edge (stall)
Sleep mode
Current
X
X
X
L
X
X
X
X
H
L->H
–
None
X
X
X
H
X
X
X
X
X
X
Tristate
Notes
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. BWX = L signifies at least one byte write select is active, BWX = valid signifies that the desired byte write selects
are asserted, see "Truth Table for Read/Write" on page 9 for details.
4. Write is defined by BWX, and WE. See "Truth Table for Read/Write" on page 9.
5. When a write cycle is detected, all I/Os are tristated, even during byte writes.
6. The DQs and DQPX pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. CEN = H, inserts wait states.
8. Device powers up deselected with the I/Os in a tristate condition, regardless of OE.
9. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQPX = tristate when OE is
inactive or when the device is deselected, and DQs and DQPX = data when OE is active.
Document Number: 38-05287 Rev. *P
Page 8 of 23
CY7C1471V25
Truth Table for Read/Write
The read-write truth table for CY7C1471V25 follows. [10, 11, 12]
Function
WE
BWA
BWB
BWC
BWD
Read
H
X
X
X
X
Write no bytes written
L
H
H
H
H
Write byte A – (DQA and DQPA)
L
L
H
H
H
Write byte B – (DQB and DQPB)
L
H
L
H
H
Write byte C – (DQC and DQPC)
L
H
H
L
H
Write byte D – (DQD and DQPD)
L
H
H
H
L
Write all bytes
L
L
L
L
L
Notes
10. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. BWX = L signifies at least one byte write select is active, BWX = valid signifies that the desired byte write selects
are asserted, see "Truth Table for Read/Write" on page 9 for details.
11. Write is defined by BWX, and WE. See "Truth Table for Read/Write" on page 9.
12. Table lists only a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write is based on which byte write is active.
Document Number: 38-05287 Rev. *P
Page 9 of 23
CY7C1471V25
Maximum Ratings
DC input voltage ................................. –0.5 V to VDD + 0.5 V
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied .......................................... –55 C to +125 C
Supply voltage on VDD relative to GND .......–0.5 V to +3.6 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................. > 2001 V
Latch up current ..................................................... > 200 mA
Operating Range
Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD
Range
DC voltage applied to outputs
in tristate ...........................................–0.5 V to VDDQ + 0.5 V
Ambient
Temperature
Commercial
0 °C to +70 °C
VDD
VDDQ
2.5 V – 5% / 2.5 V – 5% to
+ 5%
VDD
Electrical Characteristics
Over the Operating Range
Parameter [13, 14]
Description
Test Conditions
VDD
Power supply voltage
VDDQ
I/O supply voltage
VOH
Output HIGH voltage
For 2.5 V I/O, IOH =–1.0 mA
VOL
Output LOW voltage
For 2.5 V I/O, IOL=1.0 mA
For 2.5 V I/O
Min
Max
Unit
2.375
2.625
V
2.375
VDD
V
2.0
–
V
–
0.4
V
VIH
Input HIGH voltage
[13]
For 2.5 V I/O
1.7
VDD + 0.3
V
VIL
Input LOW voltage [13]
For 2.5 V I/O
–0.3
0.7
V
IX
Input leakage current except ZZ GND  VI  VDDQ
and MODE
–5
5
A
Input current of MODE
Input = VSS
–30
Input = VDD
–
Input = VSS
Input = VDD
Input current of ZZ
A
5
A
–5
–
A
–
30
A
IOZ
Output leakage current
GND  VI  VDDQ, output disabled
–5
5
A
IDD
VDD operating supply current
VDD = Max, IOUT = 0 mA,
f = fMAX = 1/tCYC
6.5 ns cycle,
133 MHz
–
305
mA
ISB1
Automatic CE power-down
current – TTL inputs
VDD = Max, device deselected,
VIN  VIH or VIN  VIL,
f = fMAX, inputs switching
6.5 ns cycle,
133 MHz
–
170
mA
ISB2
Automatic CE power-down
current – CMOS inputs
VDD = Max, device deselected, 6.5 ns cycle,
VIN  0.3 V or VIN > VDD – 0.3 V, 133 MHz
f = 0, inputs static
–
120
mA
ISB3
Automatic CE power-down
current – CMOS inputs
VDD = Max, device deselected, 6.5 ns cycle,
VIN  0.3 V or VIN > VDDQ – 0.3 V, 133 MHz
f = fMAX, inputs switching
–
170
mA
ISB4
Automatic CE power-down
current – TTL inputs
VDD = Max, device deselected, 6.5 ns cycle,
VIN  VDD – 0.3 V or VIN  0.3 V, 133 MHz
f = 0, inputs static
–
135
mA
Notes
13. Overshoot: VIH(AC) < VDD +1.5 V (pulse width less than tCYC/2). Undershoot: VIL(AC) > –2 V (pulse width less than tCYC/2).
14. TPower-up: assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document Number: 38-05287 Rev. *P
Page 10 of 23
CY7C1471V25
Capacitance
Parameter [15]
Description
Test Conditions
100-pin TQFP
Max
Unit
6
pF
TA = 25 C, f = 1 MHz,
VDD = 2.5 V, VDDQ = 2.5 V
CADDRESS
Address input capacitance
CDATA
Data input capacitance
5
pF
CCTRL
Control input capacitance
8
pF
CCLK
Clock input capacitance
6
pF
CIO
Input-output capacitance
5
pF
100-pin TQFP
Package
Unit
24.63
C/W
2.28
C/W
Thermal Resistance
Parameter [15]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, according
to EIA/JESD51.
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
2.5 V I/O Test Load
R = 1667 
2.5 V
OUTPUT
OUTPUT
RL = 50 
Z0 = 50 
GND
5 pF
R = 1538 
VL = 1.25 V
(a)
ALL INPUT PULSES
VDDQ
INCLUDING
JIG AND
SCOPE
(b)
10%
90%
10%
90%
 1 ns
 1 ns
(c)
Note
15. Tested initially and after any design or process change that may affect these parameters.
Document Number: 38-05287 Rev. *P
Page 11 of 23
CY7C1471V25
Switching Characteristics
Over the Operating Range
Parameter [16, 17]
tPOWER
Description
VDD(typical) to the first access [18]
133 MHz
Unit
Min
Max
1
–
ms
Clock
tCYC
Clock cycle time
7.5
–
ns
tCH
Clock HIGH
2.5
–
ns
tCL
Clock LOW
2.5
–
ns
Output Times
tCDV
Data output valid after CLK rise
–
6.5
ns
tDOH
Data output hold after CLK rise
2.5
–
ns
3.0
–
ns
–
3.8
ns
–
3.0
ns
0
–
ns
–
3.0
ns
[19, 20, 21]
tCLZ
Clock to low Z
tCHZ
Clock to high Z [19, 20, 21]
tOEV
OE LOW to output valid
tOELZ
tOEHZ
OE LOW to output low Z
[19, 20, 21]
OE HIGH to Output high Z
[19, 20, 21]
Setup Times
tAS
Address setup before CLK rise
1.5
–
ns
tALS
ADV/LD setup before CLK rise
1.5
–
ns
tWES
WE, BWX setup before CLK rise
1.5
–
ns
tCENS
CEN setup before CLK rise
1.5
–
ns
tDS
Data input setup before CLK rise
1.5
–
ns
tCES
Chip enable setup before CLK rise
1.5
–
ns
tAH
Address hold after CLK rise
0.5
–
ns
tALH
ADV/LD hold after CLK rise
0.5
–
ns
tWEH
WE, BWX hold after CLK rise
0.5
–
ns
Hold Times
tCENH
CEN hold after CLK rise
0.5
–
ns
tDH
Data input hold after CLK rise
0.5
–
ns
tCEH
Chip enable hold after CLK rise
0.5
–
ns
Notes
16. Timing reference level is 1.25 V when VDDQ = 2.5 V
17. Test conditions shown in (a) of Figure 2 on page 11 unless otherwise noted.
18. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can
be initiated.
19. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of Figure 2 on page 11. Transition is measured ±200 mV from steady-state voltage.
20. At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
high Z before low Z under the same system conditions.
21. This parameter is sampled and not 100% tested.
Document Number: 38-05287 Rev. *P
Page 12 of 23
CY7C1471V25
Switching Waveforms
Figure 3. Read/Write Timing [22, 23, 24]
1
2
3
t CYC
4
5
6
7
8
9
A5
A6
A7
10
CLK
t CENS
t CENH
t CES
t CEH
t CH
t CL
CEN
CE
ADV/LD
WE
BW X
A1
ADDRESS
t AS
A2
A4
A3
t CDV
t AH
t DOH
t CLZ
DQ
D(A1)
t DS
D(A2)
Q(A3)
D(A2+1)
t OEV
Q(A4+1)
Q(A4)
t OELZ
W RITE
D(A1)
W RITE
D(A2)
D(A5)
Q(A6)
D(A7)
W RITE
D(A7)
DESELECT
t OEHZ
t DH
OE
COM M AND
t CHZ
BURST
W RITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
DON’T CARE
BURST
READ
Q(A4+1)
t DOH
W RITE
D(A5)
READ
Q(A6)
UNDEFINED
Notes
22. For this waveform ZZ is tied LOW.
23. When CE is LOW, CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH, CE1 is HIGH, CE2 is LOW or CE3 is HIGH.
24. Order of the burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
Document Number: 38-05287 Rev. *P
Page 13 of 23
CY7C1471V25
Switching Waveforms (continued)
Figure 4. NOP, STALL and DESELECT Cycles [25, 26, 27]
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
CEN
CE
ADV/LD
WE
BW [A:D]
ADDRESS
A5
t CHZ
D(A1)
DQ
Q(A2)
Q(A3)
D(A4)
Q(A5)
t DOH
COMMAND
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
DON’T CARE
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
UNDEFINED
Notes
25. For this waveform ZZ is tied LOW.
26. When CE is LOW, CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH, CE1 is HIGH, CE2 is LOW or CE3 is HIGH.
27. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle.
Document Number: 38-05287 Rev. *P
Page 14 of 23
CY7C1471V25
Switching Waveforms (continued)
Figure 5. ZZ Mode Timing [28, 29]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
28. Device must be deselected when entering ZZ mode. See "Truth Table" on page 8 for all possible signal conditions to deselect the device.
29. DQs are in high Z when exiting ZZ sleep mode.
Document Number: 38-05287 Rev. *P
Page 15 of 23
CY7C1471V25
Ordering Information
Cypress offers other versions of this type of product in different configurations and features. The following table contains only the
list of parts that are currently available.
For a complete listing of all options, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products, or contact your local sales representative.
Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(MHz)
133
Package
Diagram
Ordering Code
CY7C1471V25-133AXC
Part and Package Type
51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
Operating
Range
Commercial
Ordering Code Definitions
CY
7
C
1471 V25 - 133
A
X
C
Temperature Range:
C = Commercial
Pb-free
Package Type:
A = 100-pin TQFP
Speed Grade: 133 MHz
V25 = 2.5 V VDD
Part Identifier: 1471 = FT, 2 Mb × 36 (72 Mb)
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 38-05287 Rev. *P
Page 16 of 23
CY7C1471V25
Package Diagrams
Figure 6. 100-pin TQFP (14 × 20 × 1.4 mm) A100RA Package Outline, 51-85050
51-85050 *D
Document Number: 38-05287 Rev. *P
Page 17 of 23
CY7C1471V25
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CMOS
Complementary Metal Oxide Semiconductor
CE
Chip Enable
°C
degree Celsius
CEN
Clock Enable
MHz
megahertz
I/O
Input/Output
µA
microampere
JEDEC
Joint Electron Devices Engineering Council
mA
milliampere
NoBL
No Bus Latency
mm
millimeter
OE
Output Enable
ms
millisecond
SRAM
Static Random Access Memory
mV
millivolt
TQFP
Thin Quad Flat Pack
ns
nanosecond
TTL
Transistor-Transistor Logic

ohm
WE
Write Enable
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 38-05287 Rev. *P
Symbol
Unit of Measure
Page 18 of 23
CY7C1471V25
Errata
This section describes the Ram9 Sync/NoBL ZZ pin, JTAG and Chip Enable issues. Details include trigger conditions, the devices
affected, proposed workaround and silicon revision applicability. Please contact your local Cypress sales representative if you have
further questions.
Part Numbers Affected
Density & Revision
Package Type
Operating Range
72Mb-Ram9 NoBL SRAMs: CY7C147*, CY7C147*V25
All packages
Commercial/
Industrial
Product Status
All of the devices in the Ram9 72Mb Sync/NoBL family are qualified and available in production quantities.
Ram9 Sync/NoBL ZZ Pin Issues Errata Summary
The following table defines the errata applicable to available Ram9 72Mb Sync/NoBL family devices.
Item
1.
Issues
ZZ Pin
Description
Device
Fix Status
When asserted HIGH, the ZZ pin places
device in a “sleep” condition with data integrity
preserved.The ZZ pin currently does not have
an internal pull-down resistor and hence
cannot be left floating externally by the user
during normal mode of operation.
72M-Ram9 (90nm)
For the 72M Ram9 (90 nm)
devices, this issue was fixed in
the new revision. Please
contact your local sales rep for
availability.
1. ZZ Pin Issue
■
PROBLEM DEFINITION
The problem occurs only when the device is operated in the normal mode with ZZ pin left floating. The ZZ pin on the SRAM
device does not have an internal pull-down resistor. Switching noise in the system may cause the SRAM to recognize a HIGH
on the ZZ input, which may cause the SRAM to enter sleep mode. This could result in incorrect or undesirable operation of the
SRAM.
■
TRIGGER CONDITIONS
Device operated with ZZ pin left floating.
■
SCOPE OF IMPACT
When the ZZ pin is left floating, the device delivers incorrect data.
■
WORKAROUND
Tie the ZZ pin externally to ground.
■
FIX STATUS
Fix was done for the 72Mb RAM9 Synchronous SRAMs and 72M RAM9 NoBL SRAMs devices. Fixed devices have a new
revision. The following table lists the devices affected and the new revision after the fix.
Table 1. List of Affected Devices and the new revision
Revision before the Fix
New Revision after the Fix
CY7C147*
CY7C147*B
CY7C147*V25
CY7C147*BV25
Document Number: 38-05287 Rev. *P
Page 19 of 23
CY7C1471V25
Document History Page
Document Title: CY7C1471V25, 72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture
Document Number: 38-05287
Rev.
ECN No.
Issue Date
Orig. of
Change
Description of Change
**
114674
08/06/02
PKS
New data sheet.
*A
121522
01/27/03
CJM
Changed status from Advanced Information to Preliminary.
Updated Features (for package offering).
Updated Ordering Information (Updated part numbers).
*B
223721
See ECN
NJY
Updated Features (Removed 150 MHz frequency related information).
Updated Functional Description (Removed 150 MHz frequency related
information).
Updated Logic Block Diagram (Splitted Logic Block Diagram into three Logic
Block Diagrams).
Updated Selection Guide (Removed 150 MHz frequency related information).
Updated Functional Overview (Removed 150 MHz frequency related
information).
Updated Boundary Scan Exit Order (Replaced TBD with values for all
packages).
Updated Electrical Characteristics (Removed 150 MHz frequency related
information, replaced TBD with values for maximum values of IDD, ISB1, ISB2,
ISB3, ISB4 parameters).
Updated Capacitance (Replaced TBD with values for all packages).
Updated Thermal Resistance (Replaced TBD with values for all packages).
Updated Switching Characteristics (Removed 150 MHz frequency related information).
Updated Switching Waveforms.
Updated Ordering Information (Updated part numbers).
Updated Package Diagrams (spec 51-85165 (Changed revision from ** to *A),
removed spec 51-85143 and included spec 51-85167 for 209-Ball BGA
package, removed spec 51-85115 (corresponding to 119-BGA package)).
*C
235012
See ECN
RYQ
Minor Change (To match on the spec system and external web).
*D
243572
See ECN
NJY
Updated Pin Configurations (Updated Figure “165-Ball FBGA
(15 × 17 × 1.40 mm) pinout (3 Chip Enable with JTAG)” (Changed ball H2 from
VDD to NC), updated Figure “209-ball BGA (14 × 22 × 1.76 mm) pinout”
(Changed ball R11 from DQPa to DQPe)).
Updated Capacitance (Splitted CIN parameter into CADDRESS, CDATA, CCLK
parameters and also updated the values).
*E
299511
See ECN
SYT
Updated Features (Removed 117 MHz frequency related information).
Updated Selection Guide (Removed 117 MHz frequency related information).
Updated Electrical Characteristics (Removed 117 MHz frequency related
information).
Updated Thermal Resistance (Changed value of JA from 16.8 C/W to
24.63 C/W, changed value of JC from 3.3 C/W to 2.28 C/W for 100-pin
TQFP package).
Updated Switching Characteristics (Removed 117 MHz frequency related
information).
Updated Ordering Information (Updated part numbers (Removed 117 MHz
frequency related information, added Pb-free information for 100-pin TQFP,
165-ball FBGA and 209-ball BGA Packages), added comment of “Pb-free BG
packages availability” below the Ordering Information).
Document Number: 38-05287 Rev. *P
Page 20 of 23
CY7C1471V25
Document History Page (continued)
Document Title: CY7C1471V25, 72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture
Document Number: 38-05287
Rev.
ECN No.
Issue Date
Orig. of
Change
Description of Change
*F
323039
See ECN
PCI
Updated Pin Configurations (Address expansion pins/balls in the pinouts for all
packages are modified as per JEDEC standard, changed package name from
209-Ball PBGA to 209-Ball FBGA on page# 7).
Updated Pin Definitions (Added Address Expansion pins in the Pin Definitions
Table).
Updated Operating Range (Added Industrial Temperature Range).
Updated Electrical Characteristics (Updated Test Conditions of VOL, VOH
parameters).
Updated Ordering Information (Updated part numbers (Added Pb-free
information in the ordering information table), removed comment of “Pb-free
BG packages availability” below the Ordering Information).
*G
416221
See ECN
NXR
Changed status from Preliminary to Final.
Changed address of Cypress Semiconductor Corporation from “3901 North
First Street” to “198 Champion Court”.
Updated Electrical Characteristics (Updated Note 14 (Changed VIH < VDD to
VIH < VDD), changed description of IX parameter from Input Load Current except
ZZ and MODE to Input Leakage Current except ZZ and MODE, changed
minimum value of IX parameter (corresponding to Input Current of MODE (Input
= VSS)) from –5 A to –30 A, changed maximum value of IX parameter
(corresponding to Input Current of MODE (Input = VDD)) from 30 A to 5 A,
changed minimum value of IX parameter (corresponding to Input Current of ZZ
(Input = VSS)) from –30 A to –5 A, changed maximum value of IX parameter
(corresponding to Input Current of ZZ (Input = VDD)) from 5 A to 30 A).
Updated Ordering Information (Updated part numbers, replaced Package
Name column with Package Diagram in the Ordering Information table).
*H
472335
See ECN
VKN
Updated Pin Configurations (Updated Figure “209-ball FBGA
(14 × 22 × 1.76 mm) pinout” (Corrected the ball name for H9 to VSS from
VSSQ)).
Updated TAP AC Switching Characteristics (Changed minimum value of tTH,
tTL parameters from 25 ns to 20 ns, changed maximum value of tTDOV
parameters from 5 ns to 10 ns).
Updated Maximum Ratings (Added the Maximum Rating for Supply Voltage on
VDDQ Relative to GND).
Updated Ordering Information (Updated part numbers).
*I
1274732
See ECN
VKN /
AESA
*J
2897278
03/22/2010
NJY
Updated Ordering Information (Removed obsolete part numbers from Ordering
Information table).
Updated Package Diagrams.
*K
3034798
09/21/2010
NJY
Added Ordering Code Definitions.
Added Acronyms and Units of Measure.
Minor edits and updated in new template.
*L
3353119
08/24/2011
PRIT
Updated Functional Description (Updated Note as “For best practice
recommendations, refer to SRAM System Guidelines.”).
Updated Package Diagrams (spec 51-85050 (Changed revision from *C to *D),
spec 51-85165 (Changed revision from *B to *C)).
Document Number: 38-05287 Rev. *P
Updated Switching Waveforms (Updated Figure 4 (Corrected typo)).
Page 21 of 23
CY7C1471V25
Document History Page (continued)
Document Title: CY7C1471V25, 72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture
Document Number: 38-05287
Rev.
ECN No.
Issue Date
Orig. of
Change
Description of Change
*M
3633894
06/01/2012
PRIT
Updated Features (Removed CY7C1473V25, CY7C1475V25 related
information, removed 165-ball FBGA package, 209-ball FBGA package related
information).
Updated Functional Description (Removed CY7C1473V25, CY7C1475V25
related information, removed the Note “For best practice recommendations,
refer to SRAM System Guidelines.” and its reference).
Updated Selection Guide (Removed 100 MHz frequency related information).
Removed Logic Block Diagram – CY7C1473V25.
Removed Logic Block Diagram – CY7C1475V25.
Updated Pin Configurations (Removed CY7C1473V25, CY7C1475V25 related
information, removed 165-ball FBGA package, 209-ball FBGA package related
information).
Updated Pin Definitions (Removed JTAG related information).
Updated Functional Overview (Removed CY7C1473V25, CY7C1475V25
related information).
Updated Truth Table (Removed CY7C1473V25, CY7C1475V25 related
information).
Removed Truth Table for Read/Write (Corresponding to CY7C1473V25,
CY7C1475V25).
Removed IEEE 1149.1 Serial Boundary Scan (JTAG).
Removed TAP Controller State Diagram.
Removed TAP Controller Block Diagram.
Removed TAP Timing.
Removed TAP AC Switching Characteristics.
Removed 1.8 V TAP AC Test Conditions.
Removed 1.8 V TAP AC Output Load Equivalent.
Removed 2.5 V TAP AC Test Conditions.
Removed 2.5 V TAP AC Output Load Equivalent.
Removed TAP DC Electrical Characteristics and Operating Conditions.
Removed Identification Register Definitions.
Removed Scan Register Sizes.
Removed Identification Codes.
Removed Boundary Scan Exit Order (Corresponding to CY7C1471V25,
CY7C1473V25, CY7C1475V25).
Updated Operating Range (Removed Industrial Temperature Range).
Updated Electrical Characteristics (Removed 100 MHz frequency related
information).
Updated Capacitance (Removed 165-ball FBGA package, 209-ball FBGA
package related information).
Updated Thermal Resistance (Removed 165-ball FBGA package, 209-ball
FBGA package related information).
Updated Switching Characteristics (Removed 100 MHz frequency related
information).
Updated Package Diagrams (Removed 165-ball FBGA package (spec
51-85165), 209-ball FBGA package related information (spec 51-85167)).
*N
3749841
09/20/2012
PRIT
No technical updates. Completing sunset review.
*O
3970182
04/18/2013
PRIT
Updated Features (Removed 1.8 V related information).
Updated Electrical Characteristics (Removed 1.8 V related information).
Updated AC Test Loads and Waveforms (Removed 1.8 V related information
in Figure 2).
Updated Switching Characteristics (Removed 1.8 V related information in Note
16).
Added Errata.
*P
4038218
06/24/2013
PRIT
Added Errata Footnotes.
Updated in new template.
Document Number: 38-05287 Rev. *P
Page 22 of 23
CY7C1471V25
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
cypress.com/go/automotive
cypress.com/go/clocks
cypress.com/go/interface
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
cypress.com/go/memory
PSoC
cypress.com/go/psoc
Touch Sensing
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP
Cypress Developer Community
Community | Forums | Blogs | Video | Training
Technical Support
cypress.com/go/support
cypress.com/go/touch
USB Controllers
Wireless/RF
psoc.cypress.com/solutions
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2002-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 38-05287 Rev. *P
Revised June 24, 2013
Page 23 of 23
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All products and company names mentioned in this
document may be the trademarks of their respective holders.