BA782S, BA783S Bandswitching Diodes FEATURES SOD-323 ♦ Silicon Epitaxial Planar Diode Switches ♦ For electronic bandswitching in radio and .012 (0.3) TV tuners in the frequency range of 50 … 1000 MHz.The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. .106 (2.7) .091 (2.3) .079 (2.0) .063 (1.6) Cathode Mark max. .049 (1.25) max. .004 (0.1) .059 (1.5) .043 (1.1) max. .006 (0.15) Top View ♦ These diodes are also available in SOD-123 case with the type designations BA782 and BA783. min. .010 (0.25) MECHANICAL DATA Case: SOD-323 Plastic Package Weight: approx. 0.004 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Reverse Voltage VR 35 V Forward Continuous Current at Tamb = 25 °C IF 100 mA Junction Temperature Tj 125 °C Storage Temperature Range TS –55 to +125 °C 4/98 258 BA782S, BA783S ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Forward Voltage at IF = 100 mA VF – – 1 V Leakage Current at VR = 20 V IR – – 50 nA BA782S BA783S BA782S BA783S rf rf rf rf – – – – – – – – 0.7 1.2 0.5 0.9 Ω Ω Ω Ω BA782S BA783S Ctot Ctot Ctot – – – – – – 1.5 1.25 1.2 pF pF pF LS – 2.5 – nH Dynamic Forward Resistance at f = 50 to 1000 MHz, IF = 3 mA at f = 50 to 1000 MHz, IF = 10 mA Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz Series Inductance across Case RATINGS AND CHARACTERISTIC CURVES BA782S, BA783S 259