AP9T15GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free BVDSS 20V RDS(ON) 50mΩ ID 12.5A S Description AP9T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +16 V ID@TC=25℃ Drain Current, VGS @ 4.5V 12.5 A ID@TC=100℃ Drain Current, VGS @ 4.5V 8 A 60 A 12.5 W 0.1 W/℃ 2 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 10 ℃/W 62.5 ℃/W 1 201501265 AP9T15GH-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 20 - - V VGS=4.5V, ID=6A - - 50 mΩ VGS=2.5V, ID=5.2A - - 80 mΩ 0.5 - 1.5 V VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=10A - 10 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=125 C) VDS=16V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+16V, VDS=0V - - +100 nA ID=10A - 5 8 nC VDS=16V - 1 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge 2 VGS=4.5V - 2 - nC td(on) Turn-on Delay Time VDS=10V - 8 - ns tr Rise Time ID=10A - 55 - ns td(off) Turn-off Delay Time RG=3.3Ω - 10 - ns tf Fall Time VGS=5V - 3 - ns Ciss Input Capacitance VGS=0V - 360 580 pF Coss Output Capacitance VDS=20V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.67 - Ω Min. Typ. IS=10A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9T15GH-HF 50 40 o T C = 150 o C T C =25 C ID , Drain Current (A) ID , Drain Current (A) 5.0V 4.5V 40 30 3.5V 20 2.5V 30 5.0V 4.5V 20 3.5V 10 2.5V 10 V G =1.5V V G =1.5V 0 0 0 1 2 3 4 5 0 Fig 1. Typical Output Characteristics 2 3 4 5 6 Fig 2. Typical Output Characteristics 45 1.8 I D =6A V G =4.5V I D = 5.2 A o T C =25 C 1.6 Normalized RDS(ON) 43 RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 41 39 37 35 1.4 1.2 1.0 0.8 33 0.6 0 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 10 8 Normalized VGS(th) 1.5 IS(A) 6 T j =150 o C T j =25 o C 4 1.0 0.5 2 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9T15GH-HF f=1.0MHz 14 1000 I D =10A C iss V DS =10V V DS =12V V DS =16V 10 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 100 C oss C rss 4 2 10 0 0 2 4 6 8 10 1 12 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 Operation in this area limited by RDS(ON) 100us ID (A) 10 1ms 10ms 100ms DC 1 o T c =25 C Single Pulse Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9T15GH-HF MARKING INFORMATION 9T15GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5