Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected]. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCH040N65S3 N-Channel SuperFET® III MOSFET 650 V, 65 A, 40 mΩ Description Features o SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency. • 700 V @ TJ = 150 C • Typ. RDS(on) = 35.4 mΩ • Ultra Low Gate Charge (Typ. Qg = 136 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1154 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies • UPS / Solar D G G D S TO-247 long leads S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current (Note 1) 162.5 A EAS Single Pulsed Avalanche Energy (Note 2) 358 mJ IAS Avalanche Current (Note 1) 8.1 A EAR Repetitive Avalanche Energy (Note 1) 4.17 mJ dv/dt Parameter FCH040N65S3_F155 650 - DC ±30 - AC (f > 1 Hz) - Continuous (TC = 25oC) 65 - Continuous (TC = 100oC) 41 - Pulsed MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL ±30 - Derate Above 25oC 20 Unit V V A V/ns 417 W 3.33 W/oC -55 to +150 oC 300 oC FCH040N65S3_F155 Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.3 RθJA Thermal Resistance, Junction to Ambient, Max. 40 Semiconductor Components Industries, LLC, 2017 January, 2017, Rev. 1.0 oC/W Publication Order Number: FCH040N65S3/D 1 FCH040N65S3 — N-Channel SuperFET® III MOSFET www.onsemi.com Part Number FCH040N65S3_F155 Top Mark FCH040N65S3 Package TO-247 G03 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 - - V - 0.64 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current o ID = 10 mA, Referenced to 25 C VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, TC = 125oC - 4.5 - VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 6.5 mA 2.5 - 4.5 V Static Drain to Source On Resistance - 35.4 40 mΩ gFS Forward Transconductance VGS = 10 V, ID = 32.5 A VDS = 20 V, ID = 32.5 A - 46 - S VDS = 400 V, VGS = 0 V, f = 1 MHz - 4740 - pF - 120 - pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 1154 - pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 171 - pF Qg(tot) Total Gate Charge at 10V 136 - nC Gate to Source Gate Charge VDS = 400 V, ID = 32.5 A, VGS = 10 V - Qgs - 33 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) - 59 - nC f = 1 MHz - 0.7 - Ω - 35 - ns VDD = 400 V, ID = 32.5 A, VGS = 10 V, Rg = 3.3 Ω - 51 - ns - 95 - ns - 30 - ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 65 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 162.5 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 32.5 A - - 1.2 V trr Reverse Recovery Time 534 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 32.5 A, dIF/dt = 100 A/μs - 13.6 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 8.1 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 32.5 A, di/dt ≤ 200 A/μs, VDD ≤ 400 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCH040N65S3 — N-Channel SuperFET® III MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 300 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 0.2 1 10 VDS, Drain-Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 9 100 IS, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [Ω] 0.04 VGS = 10V VGS = 20V 0.03 0.02 o 150 C 10 1 o 25 C 0.1 *Notes: 1. VGS = 0V 0.01 o *Note: TC = 25 C 0 60 120 ID, Drain Current [A] 2. 250μs Pulse Test 0.001 0.0 180 Figure 5. Capacitance Characteristics 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 5 10 VGS, Gate-Source Voltage [V] 10 Ciss 4 10 3 10 Coss 2 10 *Note: 1. VGS = 0V 2. f = 1MHz 10 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 -1 10 8 VDS = 130V VDS = 400V 6 4 2 *Note: ID = 32.5A -1 10 5 6 7 8 VGS, Gate-Source Voltage[V] 1000 0.05 0.01 4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.06 Capacitances [pF] 3 2 1 10 10 VDS, Drain-Source Voltage [V] 0 3 10 www.onsemi.com 3 0 50 100 Qg, Total Gate Charge [nC] 150 FCH040N65S3 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -50 Figure 9. Maximum Safe Operating Area 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 32.5A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 80 10μs 100μs 10 ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 0 50 100 150 o TJ, Junction Temperature [ C] 200 100 2.5 1ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 1. TC = 25 C 60 40 20 o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 Figure 11. Eoss vs. Drain to Source Voltage 30 25 EOSS [μJ] 20 15 10 5 0 0 130 260 390 520 VDS, Drain to Source Voltage [V] 650 www.onsemi.com 4 50 75 100 125 o TC, Case Temperature [ C] 150 FCH040N65S3 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZθJC(t), Thermal Response [ C/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 0.01 o 1. ZθJC(t) = 0.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 t2 *Notes: -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] www.onsemi.com 5 -1 10 0 10 FCH040N65S3 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics (Continued) FCH040N65S3 — N-Channel SuperFET® III MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FCH040N65S3 — N-Channel SuperFET® III MOSFET DUT 4.82 E 4.58 15.87 E 15.37 A B 12.81 E 4.13 3.53 6.85 6.61 3.65 E 3.51 0.254 M 5.58 E 5.34 5.20 4.96 1.35 0.51 13.08 MIN 20.82 E 20.32 1 3 3 1.87 1.53(2X) 3.93 E 3.69 1.60 20.25 E 19.75 2.77 2.43 0.71 0.51 5.56 2.66 2.29 11.12 1.35 1.17 0.254 M B A M NOTES: UNLESS OTHERWISE SPECIFIED. A. PACKAGE REFERENCE: JEDEC TO-247, ISSUE E, VARIATION AB, DATED JUNE, 2004. B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5 - 1994 E DOES NOT COMPLY JEDEC STANDARD VALUE F. DRAWING FILENAME: MKT-TO247G03_REV02 1 B A M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com