SavantIC Semiconductor Product Specification BU2506AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·Intended for use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 8 A IB Base Collector current (DC) 3 A IBM Base current (Pulse) 5 A Ptot Total power dissipation 45 W Tj Tstg Max.operating junction temperature Storage temperature TC=25 150 -65~150 SavantIC Semiconductor Product Specification BU2506AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0, 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.79A 5.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.79A 1.1 V ICES Collector cut-off current VCE=RatedVCE ;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.3A ; VCE=5V hFE-2 DC current gain IC=3A ; VCE=5V 2 MIN TYP. MAX 12 3.8 5.5 7.5 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU2506AF