AUIRFR8403
AUIRFU8403
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
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l
S
D
AUIRFR8403
DPak
AUIRFU8403
IPak
100A
c
D
S
D
G
S
D-Pak
AUIRFR8403
Package Type
127A
ID (Package Limited)
G
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Ordering Information
Base part number
3.1mΩ
ID (Silicon Limited)
Applications
l
2.4mΩ
max.
G
Description
l
40V
RDS(on) typ.
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and wide variety of other applications.
l
VDSS
D
I-Pak
AUIRFU8403
G
D
S
Gate
Drain
Source
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
AUIRFR8403
AUIRFR8403TR
AUIRFR8403TRL
AUIRFR8403TRR
AUIRFU8403
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Max.
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
90
l
520
Linear Derating Factor
99
W
0.66
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
e
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
d
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
e
114
mJ
148
See Fig. 14, 15, 24a, 24b
A
mJ
Parameter
k
A
100
d
d
Units
c
127
Continuous Drain Current, VGS @ 10V (Silicon Limited)
j
Typ.
Max.
–––
1.52
–––
50
–––
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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© 2013 International Rectifier
April 25, 2013
AUIRFR/U8403
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
40
–––
–––
2.2
–––
–––
–––
–––
–––
Conditions
––– –––
V VGS = 0V, ID = 250μA
0.03 ––– V/°C Reference to 25°C, ID = 5mA
2.4
3.1 mΩ VGS = 10V, ID = 76A
3.0
3.9
V VDS = VGS , ID = 100μA
––– 1.0
VDS = 40V, VGS = 0V
μA
––– 150
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
––– 100
nA
––– -100
VGS = -20V
1.5 –––
Ω
e
g
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd )
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
283
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
66
18
22
44
10
32
31
23
3171
477
331
573
681
–––
99
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
Conditions
VDS = 10V, ID = 76A
ID = 76A
VDS =20V
VGS = 10V
ID = 76A, VDS =0V, VGS = 10V
VDD = 26V
ID = 76A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
g
g
pF
i
h
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
dv/dt
trr
Peak Diode Recovery
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
d
f
c
520l
A
0.9
1.3
V
5.1
25
26
20
21
1.2
–––
–––
–––
–––
–––
–––
–––
––– 127
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 76A, VGS = 0V
g
V/ns TJ = 175°C, IS = 76A, VDS = 40V
TJ = 25°C
VR = 34V,
ns
IF = 76A
TJ = 125°C
di/dt = 100A/μs
TJ = 25°C
nC
TJ = 125°C
A TJ = 25°C
S
g
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 100A by source
bonding technology. Note that current limitations arising from heating
of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.039mH, RG = 50Ω,
IAS = 76A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 76A, di/dt ≤ 1255A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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© 2013 International Rectifier
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at T J approximately 90°C.
Pulse drain current is limited by source bonding technology.
April 25, 2013
AUIRFR/U8403
1000
1000
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.3V
100
BOTTOM
10
1
≤60μs PULSE WIDTH
4.3V
100
BOTTOM
10
4.3V
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 10V
≤60μs PULSE WIDTH
ID = 76A
VGS = 10V
1.6
1.2
0.8
0.4
0.1
2
3
4
5
6
7
8
Fig 3. Typical Transfer Characteristics
100000
-20
20
60
100
140
180
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
Ciss
Coss
1000
-60
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
100
ID = 76A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.3V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
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© 2013 International Rectifier
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 25, 2013
AUIRFR/U8403
10000
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100μsec
100
1msec
10
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
VGS = 0V
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
Limited By Package
ID, Drain Current (A)
100
80
60
40
20
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
140
50
50
48
47
46
45
44
43
42
41
40
-60
TC , Case Temperature (°C)
-20
20
60
100
140
180
T J , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
0.5
EAS , Single Pulse Avalanche Energy (mJ)
500
0.4
0.4
0.3
Energy (μJ)
Id = 5.0mA
49
Fig 9. Maximum Drain Current vs.
Case Temperature
0.3
0.2
0.2
0.1
0.1
0.0
ID
13A
24A
BOTTOM 76A
TOP
400
300
200
100
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
120
1
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© 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 25, 2013
AUIRFR/U8403
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
120
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 76A
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
April 25, 2013
8.0
4.5
ID = 76A
VGS(th) , Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFR/U8403
6.0
T J = 125°C
4.0
2.0
T J = 25°C
4.0
3.5
3.0
2.5
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
0.0
4
6
8
10
12
14
16
18
20
-75
-25
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
75
125
175
225
Fig 17. Threshold Voltage vs. Temperature
6
90
5
IF = 51A
V R = 34V
4
TJ = 25°C
TJ = 125°C
IF = 51A
V R = 34V
80
TJ = 25°C
TJ = 125°C
70
QRR (nC)
IRRM (A)
25
TJ , Temperature ( °C )
3
2
60
50
40
30
1
20
0
10
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
6
80
5
IF = 76A
V R = 34V
4
TJ = 25°C
TJ = 125°C
IF = 76A
V R = 34V
TJ = 25°C
TJ = 125°C
60
QRR (nC)
IRRM (A)
400
3
40
2
20
1
0
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
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© 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 25, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFR/U8403
10.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8.0
6.0
4.0
2.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
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© 2013 International Rectifier
April 25, 2013
AUIRFR/U8403
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24a. Unclamped Inductive Test Circuit
RD
V DS
Fig 24b. Unclamped Inductive Waveforms
VDS
90%
V GS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
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© 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 25, 2013
AUIRFR/U8403
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUIRFR8403
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2013 International Rectifier
April 25, 2013
AUIRFR/U8403
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUIRFU8403
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
April 25, 2013
AUIRFR/U8403
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
April 25, 2013
AUIRFR/U8403
†
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
3L-D-PAK
Moisture Sensitivity Level
I-PAK
Machine Model
ESD
MSL1
Human Body Model
Charged Device
Model
N/A
Class M2 (+/- 200)
AEC-Q101-002
Class H1C (+/- 2000)
AEC-Q101-001
Class C5 (+/- 2000)
AEC-Q101-005
††
††
Yes
RoHS Compliant
††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
12
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© 2013 International Rectifier
April 25, 2013
AUIRFR/U8403
IMPORTANT NOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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www.irf.com
© 2013 International Rectifier
April 25, 2013